• 제목/요약/키워드: Mechanical removal

검색결과 1,114건 처리시간 0.03초

자율 주행에서 단일 센서 성능 향상을 위한 FMCW 스캐닝 레이더 노이즈 제거 (Noise Removal of FMCW Scanning Radar for Single Sensor Performance Improvement in Autonomous Driving)

  • 양우성;전명환;김아영
    • 로봇학회논문지
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    • 제18권3호
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    • pp.271-280
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    • 2023
  • FMCW (Frequency Modulated Continuous Wave) radar system is widely used in autonomous driving and navigation applications due to its high detection capabilities independent of weather conditions and environments. However, radar signals can be easily contaminated by various noises such as speckle noise, receiver saturation, and multipath reflection, which can worsen sensing performance. To handle this problem, we propose a learning-free noise removal technique for radar to enhance detection performance. The proposed method leverages adaptive thresholding to remove speckle noise and receiver saturation, and wavelet transform to detect multipath reflection. After noise removal, the radar image is reconstructed with the geometric structure of the surrounding environments. We verify that our method effectively eliminated noise and can be applied to autonomous driving by improving the accuracy of odometry and place recognition.

진공청소기 분진을 모델로 한 고형오염의 세척성에 관한 연구 (Studies on the Detergency of Particulate Soil using Vacuum Cleaner Dirt as Model)

  • 강인숙;김성련
    • 한국의류학회지
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    • 제13권3호
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    • pp.286-294
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    • 1989
  • This Study has treated the effects of fiber, surfactants, temperature, surfactant concentration, pH, electrolyte, fatty acid contents and mechanical force on the removal of particulate soil from fabric, vacuum cleaner dirt was used as model particulate soil. The fabrics were soiled with mixture of vacuum cleaner dirt and fatty soil, and washed in Terg-O-tometer. The detergency was evaluated by measuring reflectance of a fabric before and after washing. The results were as follows. 1. The fiber type showed a different pattern of soil removal with surfactants. In general, particulate soil removal increased in the following order Acetate>PET. Nylon>Cotton. Particulate soil removal, which is affected by the surfactant type, increased in the following order NPE $(EO)_{10}\leqq$Soap>SLS>DBS>Tween 80. 2. The influence of temperature on the particulate soil removal was very complex because efficiency of removal was varied with surfactant and fiber types. The washing efficiency of NPE $(EO)_{10}$ was highest at around $40^{\circ}C\;and\;60^{\circ}C$ with cotton and PET but the washing efficiency of DBS was the highest at $60^{\circ}C$ with cotton, decreased monotonously with increasing temperature with PET 3. The detergency of particulate soil increased with increasing surfactant concentration at relatively low concentration and then levelled off above some optimum concentration. 4. The removal of particulate soil increased with increasing pH and mechanical force. 5. Effect of electrolyte on the particulate soil removal was depended on the concentration of the surfactant. At low concentration of surfactant, addition of electrolytes improved soil removal but above the some concentration no effect was observed. At high concentration of surfactant, Vie., $0.6\%$ , the maximum washing effect is reached without added electrolyte. These result indicate that added electrolyte only influence the adsorption of surfactant on the soil and fiber 6. Fatty acid content in the soil did not influence on particulate soil removal without regard to surfactants.

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CMP특성과 온도의 상호관계에 관한 연구 (A Study on the Correlation between Temperature and CMP Characteristics)

  • 권대희;김형재;정해도;이응숙;신영재
    • 한국정밀공학회지
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    • 제19권10호
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    • pp.156-162
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    • 2002
  • There are many factors affecting the results of CMP (Chemical Mechanical Polishing). Among them, the temperature is related to the removal rate and WIWNU (Within Wafer Non-Uniformity). In other words, the removal rate is proportional to the temperature and the variation of temperature distribution on a pad affects the non-uniformity within a wafer. In the former case, the active chemistry improves the rate of chemical reaction and the removal rate becomes better. But, there are not many advanced studies. In the latter case, a kinematical analysis between work-piece and pad can be obtained. And such result analysed from the mechanical aspect can be directly related to the temperature distribution on a pad affecting WIWNU. Meanwhile, the temperature change affects the quantities of both slurry and pad. The change of a pH value of the slurry chemistry due to a temperature variation affects the surface state of an abrasive particle and hence the agglomeration of abrasives happens above the certain temperature. And the pH alteration also affects the zeta potential of a pad surface and therefore the electrical force between pad and abrasive changes. Such results could affect the removal rate and etc. Moreover, the temperature changes the 1st and 2nd elastic moduli of a pad which are closely related to the removal rate and the WIWNU.

산화제($H_2O_2$)의 첨가 유무에 따른 Ti/TiN막의 CMP 연마 특성 (Improvement of Polishing Characteristics Using with and without Oxidant ($H_2O_2$) of Ti/FiN Layers)

  • 이경진;서용진;박창준;김기욱;박성우;김상용;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.88-91
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    • 2003
  • Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina ($Al_2O_3$) abrasive containing slurry with $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

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The efficacy of chemo-mechanical removal of dental caries

  • Lim, Soon-Bin;Choi, Kyoung-Kyu;Park, Sang-Jin
    • 대한치과보존학회:학술대회논문집
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    • 대한치과보존학회 2003년도 제120회 추계학술대회 제 5차 한ㆍ일 치과보존학회 공동학술대회
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    • pp.611-612
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    • 2003
  • Mechanical removal in decayed teeth has been performed using drill and sharp hand instruments. These methods have some major disadvantages. Namely mechanical preparation often induces pain, local anesthesia and often leads to overextended cavities. Therefore, to avoid these difficulties, a possible alternative method has been introduced for chemo-mechanical excavation of dentin caries lesions on the market. The purpose of this study was to evaluate the efficacy of between traditional mechanical and chemo-mechanical methods(Carisolv).(omitted)

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대면적 박막 태양전지 적용을 위한 CdTe 박막의 화학적기계적연마 공정 특성 (Chemical Mechanical Polishing Characteristics of CdTe Thin Films for Application to Large-area Thin Film Solar Cell)

  • 양정태;신상헌;이우선
    • 전기학회논문지
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    • 제58권6호
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    • pp.1146-1150
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    • 2009
  • Cadmium telluride (CdTe) is one of the most attractive photovoltaic materials due to its low cost, high efficiency and stable performance in physical, optical and electronic properties. Few researches on the influences of uniform surface on the photovoltaic characteristics in large-area CdTe solar cell were not reported. As the preceding study of the effects of thickness-uniformity on the photovoltaic characteristics for the large-area CdTe thin film solar cell, chemical mechanical polishing (CMP) process was investigated for an enhancement of thickness-uniformity. Removal rate of CdTe thin film was 3160 nm/min of the maximum value at the 200 $gf/cm^2$ of down force (pressure) and 60 rpm of table speed (velocity). The removal rate of CdTe thin film was more affected by the down force than the table speed which is the two main factors directly influencing on the removal rate in CMP process. RMS roughness and peak-to-valley roughness of CdTe thin film after CMP process were improved to 96.68% and 85.55%, respectively. The optimum process condition was estimated by 100 $gf/cm^2$ of down force and 60 rpm of table speed with the consideration of good removal uniformity about 5.0% as well as excellent surface roughness for the large-area CdTe solar cell.

패드 그루브의 치수가 CMP 연마특성에 미치는 영향 (The Effects of Groove Dimensions of Pad on CMP Characteristics)

  • 박기현;김형재;최재영;서헌덕;정해도
    • 대한기계학회논문집A
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    • 제29권3호
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    • pp.432-438
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    • 2005
  • CMP characteristics such as material removal rate and edge effect were measured and investigated in accordance with pad grooving effect, groove width, depth and pitch. GSQ (Groove Stiffness Quotient) and GFQ (Groove Flow Quotient) were proposed to estimate pad grooving characteristics. GSQ is defined as groove depth(D) divided by pad thickness(T) and GFQ is defined as groove width(W) divided by groove pitch(P). As GFQ value increased, material removal rate increased some point but gradually saturated. It seems that material removal rate is not affected by each parameter respectively but by interaction of these parameters such as groove dimensions. In addition, an increase in GFQ and GSQ causes edge effect to be improved. Because, pad stiffness decreases as GSQ and GFQ increase. In conclusion, groove influences relative pad stiffness although original mechanical properties of pad are unchanged by grooving. Also, it affects the flow of slurry that has an effect on the lubrication regime and polishing results. The change of groove dimensions has influence on pad stiffness and slurry flow, so that polishing results such as removal rate and edge effect become changed.

산화막 CMP의 연마율 및 비균일도 특성 (Removal Rate and Non-Uniformity Characteristics of Oxide CMP (Chemical Mechanical polishing))

  • 정소영;박성우;박창준;이경진;김기욱;김철복;김상용;서용진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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    • pp.223-227
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    • 2002
  • As the channel length of device shrinks below $0.13{\mu}m$, CMP(chemical mechanical polishing) process got into key process for global planarization in the chip manufacturing process. The removal rate and non-uniformity of the CMP characteristics occupy an important position to CMP process control. Especially, the post-CMP thickness variation depends on the device yield as well as the stability of subsequent process. In this paper, every wafer polished two times for the improvement of oxide CMP process characteristics. Then, we discussed the removal rate and non-uniformity characteristics of post-CMP process. As a result of CMP experiment, we have obtained within-wafer non-uniformity (WIWNU) below 4 [%], and wafer-to-wafer non-uniformity (WTWNU) within 3.5 [%]. It is very good result, because the reliable non-uniformity of CMP process is within 5 [%].

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혼합 산화제가 W-CMP 특성에 미치는 영향 (Effects of Mixed Oxidizer on the W-CMP Characteristics)

  • 박창준;서용진;김상용;이우선
    • 한국전기전자재료학회논문지
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    • 제16권12S호
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    • pp.1181-1186
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    • 2003
  • Chemical Mechanical Polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process, it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU %) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as Fe(NO$_3$)$_3$, H$_2$O$_2$, and KIO$_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of Al$_2$O$_3$ particles in presence of surfactant stabilizing the slurry.

Construction and Testing of a radiation-beam powered TA (ThermoAcoustic) washer for grease removal

  • ;;김영민;오승진;천원기
    • 한국태양에너지학회 논문집
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    • 제35권1호
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    • pp.21-28
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    • 2015
  • A small washer powered directly and solely by thermal radiation was constructed and tested to explore the feasibility of using solar energy or other types of thermal radiation for washing and cleaning. In principle, TA (ThermoAcoustic) washers have the benefits of simpler design and operation and fewer energy conversion processes, thus should be more energy efficient and cost less than electric washing/cleaning systems. The prototype TA converter we constructed could sustain itself with consistent fluid oscillations for more than 20 minutes when powered by either concentrated solar radiation or an IR (infrared) heater. The frequencies of water oscillations in the wash chamber ranged from 2.6 to 3.6 Hz. The overall conversion efficiency was lower than the typical efficiencies of TA engines. Change in water temperature had little effect on the oscillatory flow in the TA washer due to its low efficiency. On the other hand higher water temperatures enhanced grease removal considerably in our tests. Methods for measuring the overall conversion efficiency, frictional loss, and grease removal of the TA washing system we designed were developed and discussed.