• Applied Microscopy
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• v.52
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• pp.5.1-5.10
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• 2022

The use of Pipelines for long-distance transportation of crude oil, natural gas and similar applications is increasing and has pivotal importance in recent times. High specific strength plays a crucial role in improving transport efficiency through increased pressure and improved laying efficiency through reduced diameter and weight of line pipes. TRIP-based high-strength and high-ductility alloys comprise a mixture of ferrite, bainite, and retained austenite that provide excellent mechanical properties such as dimensional stability, fatigue strength, and impact toughness. This study performs microstructure analysis using both Nital etching and LePera etching methods. At the time of Nital etching, it is difficult to distinctly observe second phase. However, using LePera etching conditions it is possible to distinctly measure the M/A phase and ferrite matrix. The fraction measurement was done using OM and SEM images which give similar results for the average volume fraction of the phases. Although it is possible to distinguish the M/A phase from the SEM image of the sample subjected to LePera etching. However, using Nital etching is nearly impossible. Nital etching is good at specific phase analysis than LePera etching when using SEM images.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.617-622
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• 2010

We have studied methods to save Si source during the fabrication process of crystalline Si solar cells. One way is to use a thin silicon wafer substrate. As the thickness of the wafers is reduced, mechanical fractures of the substrate increase with the mechanical handling of the thin wafers. It is expected that the mechanical fractures lead to a dropping of yield in the solar cell process. In this study, the mechanical properties of 220-micrometer-solar grade Cz p-type monocrystalline Si wafers were investigated by varying saw-damage etching conditions in order to improve the flexural strength of ultra-thin monocrystalline Si solar cells. Potassium hydroxide (KOH) solution and tetramethyl ammonium hydroxide (TMAH) solution were used as etching solutions. Etching processes were operated with a varying of the ratio of KOH and TMAH solutions in different temperature conditions. After saw-damage etching, wafers were cleaned with a modified RCA cleaning method for ten minutes. Each sample was divided into 42 pieces using an automatic dicing saw machine. The surface morphologies were investigated by scanning electron microscopy and 3D optical microscopy. The thickness distribution was measured by micrometer. The strength distribution was measured with a 4-point-bending tester. As a result, TMAH solution at $90^{\circ}C$ showed the best performance for flexural strength.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.39-45
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• 2012

Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.44.2-44.2
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• 2009

Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.4
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• pp.650-656
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• 2018

The TFT-LCD industry is a kind of large-scale industrial Giant Microelectronics device industry and has a similar semiconductor process technology. Wet etching forms a relatively large proportion of the entire TFT process, but the number of published research papers on this topic is limited. The main reason for this is that the components of the etchant, in which the reaction takes place, are confidential and rarely publicized. Aluminum (Al) and copper (Cu), which have been used in recent years for the manufacture of large area LCDs, are very difficult materials to process using wet etching. Cu, a low-resistance material, can only be used in the wet etching process, and is used as a substitute for Al due to its high speed etching, low failure rate, and low power consumption. Further, the abnormal reaction of hydrogen peroxide ($H_2O_2$), which is used as an etching solution, requires additional piping and electrical safety devices. This paper proposes a method of minimizing the damage to the plant in the case of adverse reactions, though it cannot limit the adverse reaction of hydrogen peroxide. In recent years, there have been many cases in which aluminum etching equipment has been changed to copper. This paper presents a countermeasure against abnormal reactions by implementing safety PLC with a high safety grade.

• Journal of dental hygiene science
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• v.14 no.2
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• pp.140-149
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• 2014

The purpose of this study was to investigate the influence of etching surface treatment and aging treatment of zirconia on the shear bond strength between zirconia core and veneered ceramic. Four groups of zirconia-ceramic specimens were prepared; 1) NEZ group (no etching zirconia), 2) EZ group (etching zirconia), 3) ANEZ group (aging and no etching zirconia), 4) AEZ group (aging and etching zirconia). The shear bond strength between zirconia and porcelain was measured using Instron Universal Testing Machine. Surface texture with crystalline structure of zirconia surface was examined by the field emission scanning electron microscopy (FE-SEM) with ingredient analysis. The fractured surfaces of specimens were examined to determine the failure pattern by a digital microscope. The mean${\pm}$standard deviation of shear bond strengths were $23.47{\pm}3.47$ Mpa in NEZ, $28.30{\pm}4.34$ Mpa in EZ, $21.85{\pm}4.65$ Mpa in ANEZ, $24.65{\pm}3.65$ Mpa in AEZ group, respectively, and were significantly different (p<0.05). The average shear bond strength was largest in EZ group, followed by AEZ, NEZ, and ANEZ groups. Most specimens in NEZ group showed adhesive failure and most specimens in EZ, AEZ, and ANEZ group showed mixed failure. Surface of etching treatment group (EZ and AEZ) showed complex micro-structure and irregular surface texture which may facilitate mechanical interlocking, while untreated zirconia surface presented simpler micro-structure. In conclusion, an etching treatment improved bonding strength between zirconia and porcelain by forming mechanical interlocking.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.67-68
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• 2002

The properties and mechanism of silicon protuberance and groove processing by diamond tip sliding using atomic force microscope (AFM) in atmosphere were studied. To control the height of protuberance and the depth of groove, the processed height and depth depended on load and diamond tip radius were evaluated. Nanoprotuberances and grooves were fabricated on a silicon surface by approximately 100-nm-radius diamond tip sliding using an atomic force microscope in atmosphere. To clarify the mechanical and chemical properties of these parts processed, changes in the protuberance and groove profiles due to additional diamond tip sliding and potassium hydroxide (KOH) solution etching were evaluated. Processed protuberances were negligibly removed, and processed grooves were easily removed by additional diamond tip sliding. The KOH solution selectively etched the unprocessed silicon area. while the protuberances, grooves and flat surfaces processed by diamond tip sliding were negligibly etched. Three-dimensional nanofabrication is performed in this study by utilizing these mechanic-chemically processed parts as protective etching mask for KOH solution etching.

• Journal of Powder Materials
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• v.22 no.1
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• pp.15-20
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• 2015

The composite of porous silicon (Si) and amorphous carbon (C) is prepared by pyrolysis of a nano-porous Si + pitch mixture. The nano-porous Si is prepared by mechanical milling of magnesium powder with silicon monoxide (SiO) followed by removal of MgO with hydrochloric acid (etching process). The Brunauer-Emmett-Teller (BET) surface area of porous Si ($64.52m^2g^{-1}$) is much higher than that before etching Si/MgO ($4.28m^2g^{-1}$) which indicates pores are formed in Si after the etching process. Cycling stability is examined for the nano-porous Si + C composite and the result is compared with the composite of nonporous Si + C. The capacity retention of the former composite is 59.6% after 50 charge/discharge cycles while the latter shows only 28.0%. The pores of Si formed after the etching process is believed to accommodate large volumetric change of Si during charging and discharging process.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.05a
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• pp.448-451
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• 2003

This study describes a new maskless nano-fabrication technique of Si (100) using the combination of nanometer-scale mechanical forming by nano-indenter XP and KOH wet etching. First the surface of a Si (100) specimen was machined by using the nano-machining system, which utilizes the mechanism of the nano-indenter XP. Next, the specimen was etched by KOH solution. After the etching process, the convex structure or deeper hole is made because of masking or promotion effect of the affected layer generated by nano-machining. On the basis of this interesting fact, some sample structures were fabricated.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.248-250
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• 1996

VTR 자기헤드의 핵심소재로 사용되는 ferrite는 VTR 의 주기능인 영상의 기록 및 재생역할에 가장 중요한 소재이다. 이러한 종류의 head는 지금까지 mask wet chemical etching과 mechanical Process 에 의해 제작 되어왔다. 그러나 기록용량의 중가로 자기장치의 recording density를 높일것이 요구됨에 따라 자기헤드의 gap width를 줄일 필요가 있게 되었다. 본 연구는 mask와 photoresist를 사용하지 않고 ferrite를 직접 미세가공 하는 laser-induced wet etching을 이용하여 자기헤드의 기록용량을 높이고자 하였다. $Ar^+$ laser ( 파장 514 nm )를 빔 확장기와 렌즈를 사용 하여 직경 $1.8{\mu}m$ 로 집속하고, $100{\sim}500\;mW$의 출력 변화를 주어 실험을 하였다. 인산 수용액 (45, 65, 85 %)을 etchant로 사용하여 $5{\sim}30{\mu}m/sec$의 주사속도로 etching 하여, 미세선폭과 high aspect ratio를 갖는 groove를 얻을 수 있었다.