• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.9
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• pp.1013-1018
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• 2014

Magnetic Abrasive Polishing (MAP) process is a nontraditional method for polishing the surface of workpiece by using the flexibility of tool. At present, a mixture of polishing abrasives and ferrous particles is used as the tool in the MAP process. Previously, an experiment was conducted with different sizes of polishing abrasives with an aim to improve the polishing accuracy. However, the sizes of ferrous particles are also expected to have a dominant effect on the process, warranting a study on the effect of the size of ferrous iron particles. In this study, an experiment was conducted using three different sizes of ferrous particles. Iron powder of average diameters 8, 78 and $250{\mu}m$ was used as ferrous particles. The effect of each ferrous particle size was evaluated by comparing the improvements in surface roughness. The particle size of a ferrous iron was found to play a significant role in MAP and particles of $78{\mu}m$ facilitated the best improvement in surface roughness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.10a
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• pp.272-277
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• 1998

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer(work piece) and pad(tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.11
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• pp.2786-2795
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• 2000

Recently, the technology for internal polishing is needed for ultra-clean machining for the prevention of corrosion and pollution of parts is the area of high technology industries such as semiconductor, electronics, telecommunication optics, aerospace, and motors. In this study, an internal polishing system using the magnetic force was developed for the production of ultra-clean tubes with averaged surface roughness ranging from 0.2㎛ to 0.05㎛ or less, and magnetic abrasives composed of WC/Co powder were developed, After finding the optimal condition on each, machining characteristics using newly developed abrasive were analyzed. Form the results obtained by experimental design method, the optimal polishing condition was analyzed and, thhereafter internal polishing was done.

• Journal of the Korean Society of Industry Convergence
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• v.26 no.6_1
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• pp.993-999
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• 2023

In this paper, a novel polishing tool mechanism with 3-axis compliance is presented, which consists of 2-axis rotational and 1-axis linear compliances in series. The 2-axis rotational compliance mechanism is made up of four cantilever beams for adjusting rotational stiffness and one flexure universal joint at the center for constraining the z-axis deflection. The 2-axis rotational compliance can mechanically adjust the polishing tool to machined surfaces. The polishing press force can be simply controlled by using a linear spring along the z-axis. The 2-axis rotational and 1-axis linear compliance design is decoupled. The stiffness analysis of the 2-axis compliance mechanism was performed based on link compliance matrix and rigid body transformation. A 3-axis polishing tool was designed by configuring the 2-axis compliance mechanism and one linear spring.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.295-296
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• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.56-56
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.100-101
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• 1996

• Journal of the Korean Society for Precision Engineering
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• v.19 no.1
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• pp.99-106
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• 2002

For the development of a ultra-precision CNC polishing system including on-machine measurement system, we study a corrective polishing algorithm. We calculated unit removal profiles for various flat type polishing tools and polishing tool positions. Using these results we simulate the corrective polishing process based on dwell time control. We calculate dwell time distributions and residual error of the polishing simulation method and the FFT calculation method. We test corrective polishing algorithm with an optical glass. The target removal shape is a sine wave that has amplitude 0.3 micro meters. We find this polishing process has a machining resolution of nanometer order and is effective for sub-micrometer order machining. This result will be used for the software development of the CNC polishing system.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.12
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• pp.1259-1264
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• 2013

This study has focused on the application of magnetic assisted polishing for ELID ground surface of aluminum oxide ceramics. Aluminum oxide ceramics has been widely used as advanced materials for electric, optic, mechanic, chemical usage and so on. In this study, ELID grinding and magnetic assisted polishing technology was adopted for high-effective manufacturing and high quality surface of ceramic parts. The characteristic of MAP machining have been evaluated by the value of surface roughness and surface profile before and after magnetic assisted polishing. As the results of experiments, the surface roughness after magnetic assisted polishing has shown a significant improvement and the surface roughness was more improved when the feed rate of tool became slow.