• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.237-238
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• 2006

The electrical properties such as dielectric constants and dielectric losses in the spinel samples of $LiGaTiO_4$, Li(Ga,Eu)$TiO_4$, $Li(Ga.Yb)TiO_4$ have been characterized by varying measuring temperature and frequency. The long range order structures are analyzed by rietveld refinement method. and local atomic disorder structures are analyzed by MEM (maximum entropy method). The relation between the crystal structure and dielectric properties are discussed. $LiGaTiO_4$ spinel has the IMMA with lattice constant, a = 5.86333, b=17.5872. c = 8.28375 ${\AA}$, Li-sites are partially substituted by Ga or Ti. Two crystallographic oxygen sites are partially occupied(40~50%). The dielectric constants of $LiGaTiO_4$, $LiYbTiO_4$, and $LiGa_{2/6}Eu_{1/6}Ti_{1.5}O_4$ ceramics were 127, 75 and 272, respectively at 100 kHz. The dielectric relaxation were observed in the $LiGaTiO_3$ ceramics and the temperature where dielectric loss shows maximum was $390^{\circ}C$ at 1 kHz and increased with increasing the measuring frequency.

• Journal of Electrical Engineering and Technology
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• 제9권1호
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• pp.268-272
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• 2014

This letter presents a measurement methodology of the complex permittivity of liquid using a partially open cavity in narrow band. The partially open cavity (POC) can measure dielectric small changes caused by the temperature variation of the liquid inside the cavity as well. Using the resonance frequency and unloaded quality factor of the proposed POC, the complex permittivity is evaluated. The apertures on the walls of the cavity are designed to circulate the liquid inside to outside of the POC and located at the corner area of the cavity to minimize the disturbance of field distribution at the dominant mode. The results measured by the proposed POC were compared with those by the conventional open-ended probe and Cole-Cole equation. The POC showed better performance in measuring small dielectric constant changes than the open-ended probe.

• 한국해양환경ㆍ에너지학회지
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• 제15권1호
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• pp.19-21
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• 2012

내연 기관의 엔진오일은 열화작용에 의해서 수명이 짧아지고 대기오염을 유발하게 된다. 엔진오일의 상태를 정확히 측정하여 새오일로 교환함으로 엔진의 수명 연장 및 환경오염을 줄일 수 있다. 정전용량 프로브는 엔진오일과 같은 유체의 유전율을 측정하는데 사용 할 수 있다. 본 논문은 엔진 오일의 열화 정도에 따라서 달라지는 유전율 특성을 분석하였다. 오일의 상태에 따라서 달라지는 프로브의 정전용량을 각각 LCR Meter로 측정하여 엔진오일의 유전율을 계산하였다. 또한, 프로브의 크기에 따른 정전용량의 변화를 측정하여 유전율 측정의 정확도를 제시한다. 오염된 오일 일수록 유전율이 증가하며, 유전율로 오일의 오염정도를 판단하는 것이 가능하다.

• 한국세라믹학회지
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• 제31권2호
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• pp.171-176
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• 1994

The spin-casted PLZT(9/65/35) thin films through polymeric sol-gel process were prepared on Pt substrate. The crack-free, uniform and dense films were obtained by post-annealing at the temperature between 35$0^{\circ}C$ and $700^{\circ}C$. The composite structure mixed together with large grains called "rosette" and surrounding small grains were observed on the films annealed over $600^{\circ}C$. Pyrochlore phase was completely changed to perovskite phase above $600^{\circ}C$ with the increase of annealing temperature. Dielectric constant (k) was larger with the increase of film thickness and annealing temperature. from the measurements of dielectric constant as a function of measuring temperature, it was also observed that Curie temperature was shifted to higher temperature with the increase of film thickness and annealing temperature. The pyroelectric coefficient(P) of 10 times coated film annealed at $700^{\circ}C$ was 65 $\mu$C/$\textrm{cm}^2$.K.$.K.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2009년도 정보 및 제어 심포지움 논문집
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• pp.338-340
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• 2009

The asphalt pavement is usually non-uniform since achieving a non-segregated and homogeneous asphalt mixture is very difficult. The segregation can occur in the mixed material before it is fed onto the road and it become segregated as it is being placed onto the road surface. Note that this segregation determines the performance of the asphalt pavement. Hence, it is necessary to check the segregation by estimating the density of the asphalt pavement in the field. In this paper, a research on estimating the density of the asphalt mixture by measuring the dielectric constant of the material is conducted. An RF transceiver and an antenna are designed and tested to a series of asphalt density samples, and discussions are shown.

• 한국세라믹학회지
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• 제31권9호
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• pp.1012-1220
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• 1994

BaTiO3 ceramics doped with 0.1 to 4.0 mol% Nb2O5 were prepared by conventional solid stage sintering process, so as to investigate the effect of the amount of Nb2O5 on the dielectric properties and complex impedance patterns of barium titanates. From the measurement of capacitance, we found that the dielectric constant of BaTiO3 samples with 1 mol% or more Nb2O5 remained approximately constant around room temperature with values higher than 2500. In this paper, the effect of impurity content as well as temperature on complex impedance patterns was discussed in detail. In particular, the grain and grain boundary behavior of samples which showed PTCR characteristics was discussed in terms of measuring temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.675-678
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• 2000

Using the principle of the cross capacitor, a precise system for measuring the electric constants of liquids has been developed. The four electrodes of the cross capacitor were formed around fused-silica tube by plating a gold film. The effect of a non-uniform tube wall ok the measured permittivity was investigated As the individual characteristics of the tubes were determined to be constant, the pure dielectric constants extracted from any effect of the fused-silica material could be precisely derived with uncertainty of less than ${\pm}$ 0.02∼0.05 %.

• 마이크로전자및패키징학회지
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• 제17권2호
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• pp.35-40
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• 2010

CCS방법이 적용된 off-axis RF 마그네트론 스퍼터를 이용하여 증착된 $Ta_2O_5-SiO_2$의 유전체 박막에 관하여 연구를 하였다. 1500 ${\mu}m$ 의 간격으로 비유전율 및 유전손실을 측정하여 $Ta_2O_5-SiO_2$에 조성의 변화에 따른 유전특성의 변화를 나타내었다. 1MHz 에서 높은 유전상수(k~19.5) 와 낮은 유전손실(tan${\delta}$<0.05)을 보이는 영역들을 찾았는데, 이는 증착된 기판($75{\times}25mm^2$ sized Pt/Ti/$SiO_2$(100))에서 $SiO_2$/Si 타겟 영역으로부터 각각 16 mm, 22 mm 떨어진 영역에서 찾을 수 있었다.

• 한국세라믹학회지
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• 제33권6호
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• pp.665-671
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• 1996

Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.

• 전자공학회논문지D
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• 제35D권5호
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• pp.33-39
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• 1998

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.