• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1206-1208
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• 1993

This paper is to study and realize a measuring device for complex dielectric constants. The device is consisted in order of interface unit, external RAM, programmable counter, D/A converter, measuring circuit, Sample & Hold circuit, A/D converter and related control circuits. Various excitation waves are digitalized and sent to the 4096 static RAM by personal computer. These data saved in the RAM are converted to analog excitation waves through D/A converter. The frequency of excitation wave is depend on the read-out speed of the RAM according to clock pulses. Such generated waves are applied to dielectrics under test and their responses are sampled and converted to digital data through A/D converter. The computer takes the digital data and calculates finally the complex dielectric constants. The frequencies for Measurement ranges from 0.04 Hz to 10 kHz.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.47-52
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• 2009

We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권11호
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• pp.561-565
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• 2004

SiO₂ thin films are fabricated using sol-gel method and dipping method. Gelation time is faster according to increasing the amount of H₂O except H₂O/Si(OC₂H/sub 5/)₄=4. Initial viscosity is highest at H₂O/Si(OC₂H/sub 5/)₄=6. Gelation time is faster according to increasing the amount of CH₃COOH. The relative dielectric constant of thin films decreases a little according to increasing the measuring frequency. The dielectric dissipation factor of thin films increases a little below 100kHz and it increases rapidly over 100kHz.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.935-940
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• 2009

In this research, the composites (100-x)LCP-xBNT (x = 0, 10, 20, 30, 40 vol.%) were fabricated with thermoplastic LCP(Liquid Crystal Polymer) and BNT($BaNd_2Ti_4O_{12}$) which is a high frequency dielectric material. Their dielectric properties, mechanical strength and microstructure were investigated by Impedance analyser, Instron and SEM. In order to fabricate LCP-BNT composites, LCP resin was put into the twin screw type mixer($310^{\circ}C$), melted by keeping for 10 min. After that, BNT filler was dispersed with melted LCP resin for 15 min. in the mixer. For measuring the dielectric properties and mechanical strength, Composite specimens were made by pressing composite granule (LCP-BNT) with 7 ton in the mold at $310^{\circ}C$. With increasing the BNT content (0~40 vol.%) of the composite, Its dielectric constant increased, dielectric loss and flexural strength decreased. The dielectric constant and flexural strength of composites with 20~30 vol.% of BNT filler are 4.1~6.0 and 35~55 MPa respectively. BNT/LCP composite is the potential substrate material for the high frequency application.

• 대한원격탐사학회지
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• 제13권2호
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• pp.151-163
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• 1997

본 논문에서는 동축선 끝단에서의 마이크로파 반사를 측정하여 수분 함유량을 산출하는 알고리즘을 제시한다. 전파 반사는 공기층과 토양층 사이의 유전율 변화에 의해 발생하므로 반사 계수에서 유전율을 얻는 기술을 연구하였다. 우선, 유전체에 접촉한 동축선 끝단의 등가회로를 선 정하여 미지의 회로 정수를 설정하였다. 다음에, 수분함유량을 알고 있는 토양을 측정하여 미지 회로 정수를 발견하고 반사 계수와 유전율의 관계식을 실험적으로 찾았다. 토양의 유전율은 주파 수, 토양 형태에도 영향을 받지만 주로 수분 함유량에 의해 결정되므로 기존의 실험식을 이용하 여 유전율로부터 수분 함유량을 계산할 수 있었다. 본 연구에서는 Network Analyzer을 이용하여 4.65 GHz에서 각종 토양의 반사 계수의 크기와 위상을 측정하기를 반복하여 복소수 형태의 유전 율과의 관계식을 산출하였다. 이 실험식은 다른 토양에 이용되어 그 정확도가 검증되었다.

• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• 한국결정성장학회지
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• 제6권2호
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• pp.155-165
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• 1996

Growth of $LiNbO_3$ single crystal by Czochralski method was carried out to study the piezoelectric effects. Piezoelectric coefficients and elastic compliances of the $LiNbO_3$ single crystal were determined by the resonance method of length-extentional mode of bar resonator from the room temperature up to $100^{\circ}C$. Two dielectric constants of $LiNbO_3$ were also determined by measuring the capacitance of the plate specimen. Measured constants were piezoelectric coefficients $d_{15},d_{22},d_{31},d_{33}$ elastic compliances $s^E_{11},s^E_{33},2s^E_{13}+2s^E_{44},s^E_{14}$ and dielectric constants $K^T_{11},K^T_{33}$. As temperature increased, elastic compliances changed very slowly while piezoelectric coeffiecients and dielectric constant $K^T_{33}$ changed very rapidly. Electromechanical coupling constant of zyw ($45^{\circ}C$)-bar was as high as 0.51 in room temperature and nearly constant up to $1000^{\circ}C$. The increase of piezoelectric coefficients was mainly due to the increase of dielectric permittivity.

• 비파괴검사학회지
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• 제22권4호
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• pp.369-376
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• 2002

마이크로파 자유공간전송기법을 이용하여 생물자원인 곡류의 유전특성을 비파괴 방법으로 측정하였다. 마이크로파를 송신하고 수신할 수 있는 혼 안테나, 샘플홀더, network analyzer 를 이용하여 9.5 GHz에서의 마이크로파 측정 시스템을 구성하였다. 여러 가지 수분함량에서 산물밀도가 서로 다른 시료를 투과하여 나오는 마이크로파의 감쇠와 위상 변이로부터 유전상수와 유전손실을 측정하였다. 시료의 유전상수와 유전손실은 샘플홀더 내에 충진되는 시료의 수분함량과 산물밀도가 증가함에 따라 증가하였으며 수분함량과 산물밀도의 팝으로 표시되는 수분밀도를 이용할 경우 산물밀도와 시료 품종의 변이를 보정할 수 있는 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.221-228
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• 1998

In this study, the $\beta$-Polyvinylidene fluoride(PVDF) thin films were fabricated by physical vapor deposition method. Also, the properties of dielectric relaxation were studied to understand carrier's behavior of PVDF thin films, to be regarded as the excellent piezo and pyroelectricity. In the process of vapor deposition, the $\beta$-PVDF thin films have been fabricated under the condition of the substrate temperature at 3$0^{\circ}C$, the applied electric field at 142.8kV/cm and the pressure at 2.0${\times}10^{-5}$torr. The dielectric properties of PVDF have been studied in the frequency range 10Hz to 1MHz at temperature from 30 to $100^{\circ}C$. The relative dielectric constant of $\alpha$ and $\beta$-PVDF were 6.8 and 9.8, respectively, under a frequency of 1kHz. Such a phenomenon was caused by the decrease in intermolecular forces originated by the phase-transition from the TGTG' molecular conformation to the TT planar zig-zag conformation. And the relative dielectric constant is increased as a measuring temperature increases, because of the reduction of relaxation time caused by the decrease of intermolecular force.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.738-743
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• 2004

The microwave dielectric properties and their related structural characteristics in solid solutions of (1-x) $Ba(Mg_{1/3}Nb_{2/3})O_3$ -x $La(Mg_{2/3}Nb_{1/3})O_3$ (BLMN) have been investigated by measuring the dielectric constant${\varepsilon}r)$, Q value and temperature coefficient of resonant frequency$({\tau}f)$ and by observing the crystal structure using high resolution transmission electron microscopy (HRTEM). Microwave dielectric properties showed characteristic features for specific composition. Dielectric constant$({\varepsilon}r)$ showed maximum value at the composition which corresponds to the phase boundary between 1:2 ordered and 1:1 ordered structure. The increase in ${\varepsilon}_r$ may be caused by the rattling of ions by incorporating smaller ions and the disordered structure. The variation of temperature coefficient of resonant frequency${{\tau}_f)$ was investigated in terms of oxygen octahedra tilting.