• Title/Summary/Keyword: Maximum Current Density

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A Study on an Electro-Magnetic System far Arc Rotating in MIAB Welding (MIAB용접에서 아크 회전을 위한 전자기 시스템에 관한 연구)

  • 최동혁;김재웅
    • Journal of Welding and Joining
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    • v.19 no.4
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    • pp.391-398
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    • 2001
  • MIAB welding method uses a rotating arc as its heat source and is known to be efficient in pipe butt welding. The arc is rotated around the weld line by the electro-magnetic force resulting from the interaction of arc current and magnetic field. This paper is concerned with the experiment of initial stage for process control, monitoring for weld quality, and the design of coil system which is efficient of flux generation and concentration. A coil system for the generation of magnetic flux was designed and constructed. Magnetic flux density and arc rotating behavior are important factors in MIAB welding, so the relations between these factors and process parameters were investigated. Various experiments were performed for the steel pipes(48.1mm O.D and 2.0mm thickness). The magnetic flux density is increased by increasing exciting current and decreasing gap size. The maximum of arc rotating frequency is affected by exciting current and gap size. However, the variations of arc rotating frequency during welding and then the melting process are mainly influenced by welding current. Thus, it is considered that the results of this study can be used as important data on the monitoring for weld quality and the design of efficient coil system.

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The Discharge Characteristic Analysis of a Ramp Reset Waveform Using a 2-Dimensional Numerical Simulation in AC PDP (AC PDP에서 2차원 수치해석을 이용한 Ramp Reset 구동파형에 따른 방전 특성 분석)

  • Park Suk-Jae;Choi Hoon-Young;Seo Jeong-Hyun;Lee Seok-Hyun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.12
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    • pp.606-615
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    • 2004
  • The discharge characteristics of a ramp reset waveform in the alternating current plasma display panel(ac PDP) were studied using a 2-dimensional numerical simulation. We analyzed the wall charge variation during the reset discharge, address discharge and sustain discharge adopting a ramp reset waveform. Then we investigated the principal parameters for a successful discharge. In this paper, we suggest a new parameter, printing particles' density and its effects on the stability of the ramp discharge. The maximum current flows of the three electrodes during the ramp reset period were decreased with the increase in the priming particles's density which was explained with the wall charge characteristics and the current flow characteristics obtained by a 2-D simulation.

A New EST with Dual Trench Gate Electrode (DTG-EST)

  • Kim, Dae-Won;Sung, Man-Young;Kang, Ey-Goo
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.2
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    • pp.15-19
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    • 2003
  • In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. Also the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and 35A/$\textrm{cm}^2$, respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and 100A/$\textrm{cm}^2$, respectively.

Sheath analysis for a plasma immersion ion implantation (플라즈마 잠김 이온 주입에 대한 플라즈마 덮개의 해석)

  • 김영권;김영삼;조대근;최은하;조광섭
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.381-389
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    • 1998
  • The time variation of an ion current density has been analyzed based on the plasma particle dynamic model for the plasma immersion ion implantation. The implanted ion current density has its maximum value at a particular time after sheath formation, and decays. The influence of the particle collisions, the capacitive time of the substrate, and the pulse formula has been represented on the implanted ion current.

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700V Emitter Switched Thyristor(EST) with Dual Trench Gate (700V급 듀얼 트랜치 게이트를 가지는 Emitter Switched Thyristor(EST))

  • Kim, Dae-Won;Sung, Man-Young;Kang, Ey-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05b
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    • pp.27-30
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    • 2003
  • In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and $35A/cm^2$, respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and $100A/cm^2$, respectively.

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A Study on Collection Efficiency of Pilot Electrostatic Precipitator (연소장치를 이용한 소형 전기집진장치의 집진 효율에 관한 연구)

  • 한재균;최금찬
    • Journal of Korean Society for Atmospheric Environment
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    • v.9 no.2
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    • pp.125-131
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    • 1993
  • Electrostatic Precipitator has been widely used to get high efficiency which is required for collection of fine particles. In order to provide collection efficiency and size distribution data for a pilot electrostatic precipitator, a pilot study has been conducted on fly ash from pulverized coal burning apparatus. The aims of this study are to investigate characteristics of electric charge, to measure collection efficiency varied with the applied voltage, to get an optimum current and current density. Optimum current density was obtained to 0.7mA/$cm^2$ at the average electric field strength 2.33kV/cm in this experiment. Maximum particle collection efficiency was indicated 99.21% at the applied voltage 7kV. Finally, particle size distribution is also compared with photographic results. Both coarse and fine particles at the range of 0.5$\sim$2$\mu$m and 3$\sim$10 SEM $\mu$m were clearly removed by increasing applied voltage.

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Biomass Production of Pinus densiflora forma erecta Uyeki by Planting Density and Its Allocation Chracteristics (식재밀도에 따른 강송의 Biomass 생산 및 배분 특성)

  • 이돈구;권기철;김영환
    • Journal of Korea Foresty Energy
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    • v.18 no.1
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    • pp.6-10
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    • 1999
  • This study was conducted to examine biomass production and its allocation characteristics by the planting density for 12- year - old Pinus densiflora forma erecta Uyeki plantation located in Chilbo Experimental Forest of Seoul National University in Suwon, Kyonggj-do. Different sample trees were selected for harvest by the planting density as follows; six trees from 1.0m X 1.0m, five trees from 1.8m X 1.8m, four trees from 3.0m X 3.0m. Stem, previous year branches, current year branches, previous year needles and current year needles were weighed respectively with the stratified clipping method, and biomass production and its allocation characteristics were analyzed : (1) Total biomass of the above-ground was the highest at the planting density of 1.8m X l.8m and followed by 1.0m X l.0m. (2) The higher the planting density was, the lower the ratio of biomass in branches and needles. (3) As the planting density decreased, the moisture contents of stem and current year branches increased but those of needles and previous year branches decreased. (4) Maximum photosynthetic layer appeared in the upper portion of the tree at higher density plantation.

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Poly-Si Thin Film Transistor with poly-Si/a-Si Double Active Layer Fabricated by Employing Native Oxide and Excimer Laser Annealing (자연 산화막과 엑시머 레이저를 이용한 Poly-Si/a-Si 이중 박막 다결정 실리콘 박막 트랜지스터)

  • Park, Gi-Chan;Park, Jin-U;Jeong, Sang-Hun;Han, Min-Gu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.1
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    • pp.24-29
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    • 2000
  • We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

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Hybrid Capacitors Using Organic Electrolytes

  • Morimoto, T.;Che, Y.;Tsushima, M.
    • Journal of the Korean Electrochemical Society
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    • v.6 no.3
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    • pp.174-177
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    • 2003
  • Electric double-layer capacitors based on charge storage at the interface between a high surface area activated carbon electrode and an electrolyte solution are characterized by their long cycle-life and high power density in comparison with batteries. However, energy density of electric double-layer capacitors obtained at present is about 6 Wh/kg at a power density of 500W/kg which is smaller as compared with that of batteries and limits the wide spread use of the capacitors. Therefore, a new capacitor that shows larger energy density than that of electric double-layer capacitors is proposed. The new capacitor is the hybrid capacitor consisting of activated carbon cathode, carbonaceous anode and an organic electrolyte. Maximum voltage applicable to the cell is over 4.2V that is larger than that of the electric double-layer capacitor. As a result, discharged energy density on the basis of stacked volume of electrode, current collector and separator is more than 18Wh/l at a power density of 500W/l.

Effect of Hole Transport Layer on the Electrical and Optical Characteristics of Inverted Organic Light-Emitting Diodes (정공수송층이 역구조 OLED의 전기 및 광학적 특성에 미치는 영향)

  • Se-Jin Im;Dae-Gyu Moon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.4
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    • pp.397-402
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    • 2023
  • We have developed inverted green phosphorescent organic light emitting diodes (OLEDs) using 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) and bis(carbazole-9-yl)biphenyl (CBP) hole transport layers. The driving voltage, current efficiency, power efficiency, and emission characteristics of devices were investigated. While the driving voltage for the same current density was about 1~2 V lower in the devices with the TAPC layer, the maximum luminance was higher in the device with the CBP layer. The maximum current efficiency and power efficiency were 3.2 and 2.7 times higher in the device with the CBP layer, respectively. The higher efficiency in the CBP device resulted from the enhanced hole-electron balance although weak parasitic recombination takes place in the CBP hole transport layer.