• Korean Journal of Fisheries and Aquatic Sciences
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• v.27 no.2
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• pp.173-182
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• 1994

A numerical experiment on the effective discharge of waste materials caused in recirculating aquaculture basins was performed. The numerical model used in this study was a 4-level hydrodynamic and advection-diffusion model. Flow structures and settling processes of ss in the various mathematical model basins are discussed. The calculated flow fields of the numerical basin corresponded well with the measured velocity in field basin. In the cases of steep bottom slopes in 4/30, the non-dimensional tractive force($U{\ast}/U{\ast}_c$) which is all important parameter for the deposition pattern of waste materials was stronger than with the mild slope one. The settling pattern of ss depended considerably on the degree of bottom slope of basin. To concentrate deposited waste materials into the center discharge pipe, it is useful to design a cylindrical basin with a steeply conical bottom. In addition, to prevent movement of the deposit area away from the center, it is necessary to locate the circulating ducts at diametrically opposed points on the basin sides.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1119-1122
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• 2005

A selective deposition of Co thin films for thin film transistor gate electrode has been carried out by the growth with combination of micro-contact printing and metal organic chemical vapor deposition (MOCVD). This results in the elimination of optical lithography process. MOCVD has been employed to selectively deposit Co films on preformed OTS gate pattern by using micro-contact printing (${\mu}CP$). A hydrogenated amorphous silicon TFT with a Co gate selectively formed on SAMs patterned structure exhibited a subthreshold slope of 0.88V/dec, and mobility of $0.35cm^2/V-s$, on/off current ratio of $10^6$, and a threshold voltage of 2.5V, and thus demonstrating the successful application of the novel bottom-up approach into the fabrication of a-Si:H TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.365.2-365.2
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• 2014

Nickel sulfide (NiS) has been utilized in optoelectronic applications, such as transformation-toughening agent for materials used in semiconductor applications, catalysts, and cathodic materials in rechargeable lithium batteries. Recently, high quality nickel sulfide thin films have been explored using ALD/CVD technique. Suitable precursors are needed to deposit thin films of inorganic materials. However, nickel sulfide precursors available for ALD/CVD process are very limited to nickel complexes with dithiocarbamate and alkanethiolate ligands. Therefore, it is essential to prepare novel nickel sulfide suitable for ALD/CVD precesses. Herein we report on the synthesis and characterization of new nickel sulfide complex with designed aminothiolate ligand. Furthermore thin films of NiS have been prepared on silicon oxide substrates by spin coating nickel precursor 10 wt% in THF. The novel complex has been characterized by means of 1H-NMR, elemental analysis, thermogravimetric analysis (TGA), X-ray Diffraction (XRD) and scanning electron microscope (SEM).

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.760-765
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• 1996

Silicon oxide thin films are prepared by plasma-enhanced CVD (PECVD) using 100kHz and 13.56MHz generators. Source gases are two sorts of mixture, tetramethoxysilane (TMOS) and oxygen, and tetramethylsilane (TMS) and oxygen. We investigate the effect of frequency on film properties of deposited films including mechanical properties. 100kHz PECVD process can deposit silicon oxide films at $23^{\circ}C$ at the power of 20W. X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR) and ellipsometric measurements reveal that the structural quality of the films prepared both by 100kHz process and by 13.56MHz process are very like silicon dioxide. The 100kHz process is adequate for low temperature deposition of SiOx films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.12-15
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• 2003

The YBaCuO thick film was deposited by the electrophoresis in the solution with different dimension particles. The morphology of the films deposited from different particles size was compared. The powder made by sol-gel method has the submicron particles, which deposit the most smooth film, and without microcracks after sintering. After sintering of the deposited film, the zone-melting process was carried out in low oxygen partial pressure (100 Pa) and Ag was used as substrate. And the zone-melted YBaCuO was studied by XRD.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.23-27
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• 2008

The effect of solution agitation on the copper electroless deposition process of ULSI (ultra large scale integration) interconnections was investigated by using physical, electrochemical and electrical techniques. It was found that proper solution agitation was effective to obtain superconformal copper configuration within the trenches of $130{\sim}80nm$ width. The transition of open potential during electroless deposition process showed that solution agitation induced compact structure of copper deposits by suppressing mass transfer of cuprous ions toward substrate. Also, the specific resistivity of copper layers was lowered by increasing agitation speed, which made the deposited copper particles smaller. Considering both copper deposit configuration and electric property, around 500 rpm of solution agitation was the most suitable for the homogeneous electroless copper filling within the ultra-fine patterns.

• IE interfaces
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• v.1 no.1
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• pp.9-15
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• 1988

A statistical analysis for detecting deviations from normal magnetic field intensities, caused by the introduction of magnetite materials into man-made fissures and cracks at subsurface levels is presented. For detecting such deviations it turns out the comparison of two different field measurements measured at two different sites far from each other is more efficient than the study of the only measurement by the univariate and bivariate time series analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.110-111
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• 2008

Diamond material were manufactured using electrical pyrolysis method and hot filament method. Surface morphology was observed with SEM and its microstructure was investigated using Raman spectroscopy. The accumulation of the particles was observed to have strong selective and to deposit at the substrate only on the roughly polished steel surface compared to the mirror polished implying that the particle was a charged.

• Journal of the Korean Electrochemical Society
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• v.15 no.3
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• pp.135-148
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• 2012

Ionic liquids are steadily attracting interests throughout a recent decade and their application is expanding into various fields including electrochemistry due to their unique properties such as non-volatility, inflammability, low toxicity, good ionic conductivity, wide electrochemical potential window and so on. These features make ionic liquids become an alternative solution for electrodeposition of metals that cannot be electroplated in aqueous electrolytes. In this review, we classify investigated metals into three categories, which are light (Li, Mg), refractory (Ti, Ta) and noble (Pd, Pt, Au) metals, rather than covering the exhaustive list of metals and try to update the recent development in this area. In electrodeposition of light metals, granular fine Li particles were successfully obtained while the passivation of electrodeposited Mg layers is an obstacle to reversible deposition-dissolution process of Mg. In the case of refractory metals, the quality of Ta and Ti deposit particles was effectively improved with addition of LiF and pyrrole, respectively. In noble metal category, EMIM TFSA ionic liquid as an electrolyte for Au electrodeposition was proven to be effective and BMP TFSA ionic liquid developed a smooth Pd deposit. Pt nanoparticle production from ionic liquid droplet in aqueous solution can be cost-effective and display an excellent electrocatalytic activity.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.379-384
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• 1999

Langmuir-Blodgett(LB) films which have high ordered orientation and ordering structure are fabricated by LB method which deposit the ultra-thin films of organic materials at a molecular level. The electrical characteristics of stearic acid LB ultra-thin films for the horizontal direction were investigated to develop the gas sensor using LB ultra-thin films. The optimal deposition condition to deposit the LB ultra-thin films was obtained from $\pi-A$ isotherms and the deposition status of stearic acid LB ultra-thin films was verified by the measurement of deposition ratio, UV-absorbance, and electrical properties for LB ultra-thin films. The conductivity of stearic acid LB ultra-thin films for horizontal direction was about $10_{-8}[S/cm]$. The activation energy for LB ultra-thin films with respect to variation of temperature was about 1.0[eV], which was correspond to semiconductor material. The response characteristics for organic gas were confirmed by measuring the response time, recovery time, and reproducibility of the LB ultra-thin to each organic gas. Also, the penetration and adsorption behavior of gas molecule were confirmed through the organic gas response characteristics of LB ultra-thin films with respect to temperature.