• 제목/요약/키워드: Material property variation

검색결과 221건 처리시간 0.028초

Die attach 공정조건에 따른 LED 소자의 열 저항 특성 변화 (Effect of Die Attach Process Variation on LED Device Thermal Resistance Property)

  • 송혜정;조현민;이승익;이철균;신무환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.390-391
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    • 2007
  • LED Packaging 과정 중 Die bond 재료로 Silver epoxy를 사용하여 Packaging 한 후 T3Ster 장비로 열 저항 값(Rth)을 측정하였다. Silver epoxy 의 접착 두께를 조절하여 열 저항 값을 측정하였고, 열전도도 값이 다른 Silver epoxy를 사용하여 열 저항 값을 측정하였다. Silver epoxy 접착 두께가 충분하여 Chip 전면에 고루 분포되었을 경우 그렇지 않은 경우보다 평균 4.8K/W 낮은 13.23K/W의 열 저항 값을 나타내었고, 열전도도가 높은 Silver epoxy 일수록 열전도도가 낮은 재료보다 평균 4.1K/W 낮은 12K/W의 열 저항 값을 나타내었다.

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정공 수송층 두께 변화에 따른 OLED의 유전 특성 (Dielectric Properties in OLED depending on Thickness Variation of Hole Injection Layer)

  • 차기호;이영환;김원종;조경순;신종열;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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    • pp.52-53
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    • 2006
  • ITO/ polytetrafluorethylene (PTFE)/ Tris(8-hydroxyquinolinato Aluminum ($Alq_3$)/ Al 구조에서 정공 수송층 PTFE의 두께 변화에 따른 유전특성은 HP 4284A precision LCR Meter를 이용하여 주파수에 따른 임피던스와 위상각, 유전손실, 그리고 커패시턴스를 측정하였다. 측정 결과 PTFE의 두께가 증가할수록 임피던스 값은 증가하고, 위상각은 저주파수 영역에서는 두께가 증가할수록 감소하다가 고주파수 영역에서는 거의 같아지는 것을 확인하였다. 또한, 유전손실도 저주파수 영역에서는 정공 수송층이 증가할수록 감소하다가 고주파수 영역에서는 거의 같아졌고, 커패시턴스는 PTFE의 두께가 증가함에 따라 작아지고 주파수가 높아질수록 감소함을 확인하였다.

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그린팀버월 패널의 열전달 특성 (Heat transfer of green timber wall panels)

  • 김윤희;장상식;신일중
    • 농업과학연구
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    • 제38권1호
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    • pp.115-120
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    • 2011
  • 20% of total energy use to sustain temperature of building inside. In this reasons, researchers effort to improve the thermal insulation capacity with new wall system. Using appropriate materials and consisting new wall system should considered in energy saving design. OSB(Oriented strand board), Larch lining board used to consist wall system. $2{\sim}6$ Larch lining board has tongue & groove shape for preventing moisture. Comparing with gypsum board and green timber lining board as interior sheathing material, temperature difference of Green timber wall system was bigger than temperature difference of gypsum board wall system. This aspects indicate that Green timber wall system was revealed higher thermal insulation property than gypsum board wall system. Gypsum board portion transfer heat easily because temperature difference gradient of gypsum board wall system was smaller than OSB wall system. Total temperature variation shape of G-4-S and G-6-S show similar model but, temperature variation shape in green timber wall portion assume a new aspect. The purpose of this study was that possibility of thermal insulation variation and new composition of wall system identify to improve thermal insulation performance. In the temperature case, this study shows possibility of improving thermal insulation performance. Humidity, sunshine and wind etc. should considered to determine building adiabatic properties.

해석과 실험을 통한 박판성형공정에서의 드로오비드의 구속력에 관한 연구 (A Study on the Binding Force of Drawbead in the Sheet Metal Forming Process through the finite element and experimental analysis)

  • 반갑수;모창기;서의권
    • 한국산업융합학회 논문집
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    • 제10권1호
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    • pp.5-14
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    • 2007
  • It is necessary for development of drawing product with press to have suitable material selection & all process design and the problem during press process has been cleared from judgement of experience & trial and error. Recently we can estimate press process result from computer aided design & FEM. But we can get more reliable result when we can put more precise process variants during FEM. In case of using a drawbead that is used for the material inflow, it is considered for us to put material property, other analysis condition & friction figure when material is passing through the drawbead for better FEM. From our study, we have drawn an analogy bead connection depth, friction figure & drawing and restraining load according to kinds of lubrication from experiment & FEM for the drawbead. We applied above result to the drawing experiment & FEM and confirmed the validity. We could notice the relation between friction figure & drawing load and the friction figure variation according to kinds of lubrication. It is expected to draw more precise analogy that can be used for real process due to more precise process variants application to FEM.

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STI CMP후 Topology에 따른 Gate Etch, Transistor 특성 변화 (Property variation of transistor in Gate Etch Process versus topology of STI CMP)

  • 김상용;정헌상;박민우;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.181-184
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    • 2001
  • Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

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STI CMP후 Topology에 따른 Gate Etch, Transistor 특성 변화 (Property variation of transistor in Gate Etch Process versus topology of STI CMP)

  • 김상용;정헌상;박민우;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.181-184
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    • 2001
  • Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

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드레인-소스 전극 간극의 변화에 따른 Gas Sensor의 열에너지 확산 해석 (Heat Energy Diffusion Analysis in the Gas Sensor Body with the Variation of Drain-Source Electrode Distance)

  • 장경욱
    • 한국전기전자재료학회논문지
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    • 제30권9호
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    • pp.589-595
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    • 2017
  • MOS-FET structured gas sensors were manufactured using MWCNTs for application as NOx gas sensors. As the gas sensors need to be heated to facilitate desorption of the gas molecules, heat dispersion plays a key role in boosting the degree of uniformity of molecular desorption. We report the desorption of gas molecules from the sensor at $150^{\circ}C$ for different sensor electrode gaps (30, 60, and $90{\mu}m$). The COMSOL analysis program was used to verify the process of heat dispersion. For heat analysis, structure of FET gas sensor modeling was proceeded. In addition, a property value of the material was used for two-dimensional modeling. To ascertain the degree of heat dispersion by FEM, the governing equations were presented as partial differential equations. The heat analysis revealed that although a large electrode gap is advantageous for effective gas adsorption, consideration of the heat dispersion gradient indicated that the optimal electrode gap for the sensor is $60{\mu}m$.

유기발광소자에서 정공주입층의 인가전압에 따른 유전특성 (Dielecric properties depending on applied voltage of OLEDs with Hole Injection Layer)

  • 차기호;이영환;김원종;이종용;김귀열;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.309-310
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    • 2006
  • We studied dielectric properties of OLEDs(Organic Light-emitting Diodes) depending on applied voltage (AC) of PTFE(Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (PTFE)/emitting layer, Alq3(Tris(8-hydroxyquinolibe) Alumin)/Al. PTFE is deposited 2 [nm] as rate of 0.2~03 [${\AA}/s$] and $Alq_3$ is deposited 100 [nm] as rate of 1.3~1.5 [${\AA}/s$] m high vacuum ($5{\times}10^{-6}$[torr]). In result of these studies, we can know dielectric properties of OLEDs. Impedance is decreased depending on applied voltage variation, dielectric loss showed peak in specified voltage and showed cole-cole plot of a specimen.

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Barkhausen noise를 이용한 1Cr-1Mo-0.25V강의 열화도 평가 (Evaluation of 1Cr-1Mo-0.25V Steel Degradation Using Magnetic Barkhausen Noise)

  • 이종민;안봉영;남승훈;이승석;이억섭;남영현
    • 대한기계학회논문집A
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    • 제26권7호
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    • pp.1262-1269
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    • 2002
  • It is inevitable to evaluate the life of turbine rotor because the operating periods of power plants need to be extended. For the test, seven kinds of specimens with different degradation levels were prepared by the isothermal heat treatment at $630^{\circ}C$. Magnetic methods utilizing Barkhausen noise coercive force($BN_c$) were applied to detect the degradation caused by thermal aging. Magnetic property of material is related with domain dynamics and that is affected by the microstructure of material. Therefore $BN_c$ is very sensitive to the microstructure change of the material. With the increase of degradation, $BN_c$ was decreased and this phenomenon is considered due to precipitations and grain size. The result was compared with Vickers hardness($H_v$) and coercive force($H_c$) to detect the relative variation, and was related with $H_v$ and YS to estimate the change of the mechanical properties with the degradation.

홉킨스바 장치를 이용한 분말금속의 동적 특성에 관한 수치해석적 연구 (A Numerical Study on the Dynamic Characteristics of Power Metal using Split Hopkinson Pressure Bar)

  • 황두순;이승우;홍성인
    • 대한기계학회논문집A
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    • 제24권12호
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    • pp.2972-2979
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    • 2000
  • Dynamic characteristics of powder metal is very important to mechanical structures requiring high strength or endurance for impact loading. But owing to distinctive property of powder metal, that is relative, it has been investigated restrictively compared to static characteristics. The objectives of this study is to investigate dynamic characteristics of powder metal and compare it to a fully density material. To find the characteristics, an explicit finite element method is used for simulation of Split Hopkinson Pressure Bar experiment based on the stress wave propagation theory. We obtained a dynamic stress-strain relationship and dynamic behavior of powder metal, as well as the variation of material properties during dynamic deformation.