• Structural Engineering and Mechanics
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• v.89 no.3
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• pp.225-238
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• 2024

In this paper, a quasi-3D hyperbolic shear deformation theory for the bending responses of a functionally graded (FG) porous micro-beam is based on a modified couple stress theory requiring only one material length scale parameter that can capture the size influence. The model proposed accounts for both shear and normal deformation effects through an illustrative variation of all displacements across the thickness and satisfies the zero traction boundary conditions on the top and bottom surfaces of the micro-beam. The effective material properties of the functionally graded micro-beam are assumed to vary in the thickness direction and are estimated using the homogenization method of power law distribution, which is modified to approximate the porous material properties with even and uneven distributions of porosity phases. The equilibrium equations are obtained using the virtual work principle and solved using Navier's technique. The validity of the derived formulation is established by comparing it with the ones available in the literature. Numerical examples are presented to investigate the influences of the power law index, material length scale parameter, beam thickness, and shear and normal deformation effects on the mechanical characteristics of the FG micro-beam. The results demonstrate that the inclusion of the size effects increases the microbeams stiffness, which consequently leads to a reduction in deflections. In contrast, the shear and normal deformation effects are just the opposite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.70-70
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• 2009

In this paper, we proposed 2500V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500V NPT IGBT according to size of device. In results, we obtaind design parameter with 375um n-drift thickness, 15um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000V NPT IGBT devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.236-239
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• 1995

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of devise characteristics due to the process parameters. In this paper, we used process simulator and device simulator in order to optimize process parameter which changes of the device characteristics caused by process parameter variation. From this simulation, it has been derived to the dependence relations between process parameter and device characteristics. The experimental results of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.265-268
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• 1995

We have studied the effect of the mesogenic core of nematic liquid crystals (NLCs) for polar (out-of-plane tilt) anchoring strength and surface order parameter on rubbed polyimide (PI) films. The order of polar anchoring strength for NLCs on rubbed PI films is 5CB > PCH5 > CCH5. This order is the same for all rubbing strengths investigated. The surface order parameter for NLCs is 5CB > PCH-5 > CCH5 on rubbed PI films. From these results, we suggest that the polar anchoring strength is strongly related to the surface order parameter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.357-358
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• 2006

Accurate calibration matching for maladjusted stereo cameras with calibrated pixel distance parameter is presented. The camera calibration is a necessary procedure for stereo vision-based depth computation. Intra and extra parameters should be obtain to determine the relation between image and world coordination through experiment. One difficulty is in camera alignment for parallel installation: placing two CCD arrays in a plane. No effective methods for such alignment have been presented before. Some amount of depth error caused from such non-parallel installation of cameras is inevitable. If the pixel distance parameter which is one of Intra parameter is calibrated with known points, such error can be compensated in some amount and showed the variable experiments for accurate effects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.290-290
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• 2010

For real-time recognition of accurate measuring instrument, the adaptive parameter typed Circular Nural-Net Recognition is proposed. The fast nural network system acted by a replacement of the conventional nural network has good real-time convergence. we are applied proposed nural network to utilize various control and investigation equipments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.273-279
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• 2010

In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.3 s.174
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• pp.676-684
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• 2000

In this study, behavior of $C_t$ which is a well-known fracture parameter characterizing creep crack growth rate, is investigated for weld interface cracks. Finite element analyses were per formed for a C(T) specimen under constant loading condition for elastic-plastic-creeping materials. In modeling C(T) geometry, an interface was employed along the crack plane which simulated the interface between weld and base metals. The $C_t$ versus time relations were obtained under various creep constant combinations and plastic constant combinations for weld and base metals, respectively. A unified $C_t$ versus time curve is obtained by normalizing $C_t$ with $C^*$ and t with $t_T$ for all the cases of material constant variations.

• Structural Engineering and Mechanics
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• v.5 no.3
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• pp.221-237
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• 1997

This paper presents a new uniaxial material model for rate-sensitive analysis addressing both the transient and steady-state responses. The new model adopts visco-plastic theory for the rate-sensitive response, and employs a three-parameter representation of the overstress as a function of the strain-rate. The third parameter is introduced in the new model to control its transient response characteristics, and to provide flexibility in fitting test data on the variation of overstress with strain-rate. Since the governing visco-plastic differential equation cannot be integrated analytically due to its inherent nonlinearity, a new single-step numerical integration procedure is proposed, which leads to high levels of accuracy almost independent of the size of the integration time-step. The new model is implemented within the nonlinear analysis program ADAPTIC, which is used to provide several verification examples and comparison with other experimental and numerical results. The companion paper extends the three-parameter model to trilinear static stress-strain relationships for steel and concrete, and presents application examples of the proposed models.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.263-267
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• 2016

In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.