• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.234-234
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• 2010

Most high efficiency silicon solar cells use a passivated selective emitter. It have been an important research subject for crystalline silicon solar cells for decades. It is being used in production for high efficiency solar cells. Most of the selective emitter process require expensive extra masking, etching steps, and a double diffusion process making selective emitters not cost effective. In this paper, we study method for single diffusion step selective emitter process as an alternative to not cost effective double diffusion process. Cost effective selective emitter that the efficiency should be increased significantly (mare than 0.2%) and that the process should simple, robust and cheap.

• Journal of Surface Science and Engineering
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• v.40 no.5
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• pp.214-218
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• 2007

The objective of this study is to evaluate the diffusion behavior of Al and Si from a coatings in the microstucture of Fe-Si steel. Steel samples deposited with Al-Si alloy are prepared by ion plating process, followed by annealing treatments for diffusion at $1050^{\circ}C$. Several intermetallic phases are found in the coatings and they are identified as Fe-Al and an orderd Fe-Si compounds. Series of different concentration profiles through the sample have been obtained and Si content reaches about 5 wt% in case of 90 minutes of diffusion time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.223-227
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• 2004

We have studied the interfacial diffusion of Fe/Cr multilayers using synchrotron x-ray techniques, such as x-ray reflectivity, extended x-ray absorption fine structures (EXAFS), and high-resolution x-ray scattering. The results of x-ray reflectivity indicated that the interfacial roughness of Fe/Cr multilayers increased with the Cr-layer thickness. The Fourier transform (FT) of EXAFS data clearly showed that the Fe atoms dominantly diffused into the stable Cr layers at the Fe/Cr interface. The results of high-resolution x-ray scattering supported the interfacial diffusion of Fe atoms. Out study revealed that the dominantly interfacial diffusion of Fe atoms into the Cr layers effects the interfacial roughness of the Fe/Cr multilayers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.30-33
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• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.63-66
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• 2003

To diffuse Zn at solid-state, the $SiO-2$/ZnO/$SiO_2$ wafers was made by PECVD and RF Sputter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about 500 ${\AA}$ and about 3500 ${\AA}$. Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.59-62
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• 2003

Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.635-636
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• 2006

In this study, the diffusion behaviors of C and Co in liquid phase sintering of WC-Co system were investigated whether these two components diffused in the same direction in case of having opposite gradient each other with not being $\eta$ phase. The green compacts with controlled compositions in not being of $\eta$ phase and gradient composition which one is WC-5Co-1.2%C, the other is WC-XCo-0.2%C (where X = 5, 10, 15, 20, 25) were sintered at $1350^{\circ}C$ and $1400^{\circ}C$ and then the diffusion behaviors of C and Co were investigated by analyses of compositional change, also determined for microstructure and microhardness. Also, same testing was carried out on the specimens with dual layers sintered in upright and reverse positions to evaluate the effect of gravity on the diffusion in liquid Co. From the results of this study, we can find the fact that the direction of diffusion for C and Co in WC-Co system during liquid phase sintering was different and the effect of gravity for the liquid was insignificant. Also other physical properties were changed on the diffusion of elements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.115-117
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• 2005

In this paper, we formed the shallow junction by preamorphization and low energy ion implantation. And a simulator is designed for predicting the annealing process results. Especially, if considered the applicable to single step annealing process(RTA, FA) and dual step annealing process(RTA+FA, FA+RTA). In this simulation, the ion implantation model and the boron diffusion model are used. The Monte Carlo model is used for the ion implantation. Boron diffusion model is based on pair diffusion at nonequilibrium condition. And we considered that the BI-pairs lead the diffusion and the boron activation and clustering reaction. Using the boundary condition and initial condition, the diffusion equation is solved successfully. The simulator is made ofC language and reappear the experimental data successfully.

• Journal of Korean Society for Atmospheric Environment
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• v.26 no.1
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• pp.77-84
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• 2010

The diffusion and partition coefficients of polyurethane foam (PUF) are estimated using a microbalance experiment and small chamber test. The microbalance is used to measure sorption/desorption kinetics and equilibrium data. When the diffusion condition is controlled in the chamber of the sample, interactions between volatile organic compounds (VOCs) and PUF can lead to the estimation of a relatively homogenous rate of mass transfer in the interiors and surfaces of PUF. The estimates of the material/air partition coefficient (K) and the material-phase diffusion coefficient (D) are shown to be independent of the concentrations of VOCs. This approach, if applied to a diffusion-controlled or physically-based model, can facilitate more precise prediction of their source/sink behavior. Although further research and more rigorous validation is needed, an emission model applied with the diffusion and partition coefficients from this research holds promise for the improvement of reliability in predicting the behavior of VOCs emitted from porous building materials by D and K.

• Journal of Advanced Navigation Technology
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• v.16 no.4
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• pp.657-664
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• 2012

One of the methods to transmit solute through solvent is diffusion. Various particles or molecules including several charged ions in the body diffuse from high density region to low density due to density difference or external electric field. This kind of mechanism is due to thermal motion of each solute molecules. These situations can be deployed using Fick's first and second laws that govern diffusion phenomena in the body. I analysis these diffusion status of material in the body using above mentioned Fick's laws and then implement them through illustration.