• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.24-29
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• 2005

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. Copper has been the candidate metallization material for ultra-large scale integrated circuits (ULSIs), owing to its excellent electro-migration resistance and low electrical resistance. However, it still has various problems in copper CMP process. Thus, it is important to understand the effect of the process variables such as turntable speed, head speed, down force and back pressure are very important parameters that must be carefully formulated in order to achieve desired the removal rates and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the main effect of the variables and the interaction between the various parameters during CMP. A better understanding of the interaction behavior between the various parameters and the effect on removal rate, non-uniformity and ETC (edge to center) is achieved by using the statistical analysis techniques. In the experimental tests, the optimum parameters which were derived from the statistical analysis could be found for higher removal rate and lower non-uniformity through the above DOE results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1181-1186
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• 2003

Chemical Mechanical Polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process, it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU %) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as Fe(NO$_3$)$_3$, H$_2$O$_2$, and KIO$_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of Al$_2$O$_3$ particles in presence of surfactant stabilizing the slurry.

• Structural Engineering and Mechanics
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• v.73 no.5
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• pp.501-513
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• 2020

In the present work, the optimization of machining parameters to achieve the desired technological parameters such as surface roughness, tool radial vibration and material removal rate have been carried out using response surface methodology (RSM). The hard turning of EN19 alloy steel with coated carbide (GC3015) cutting tools was studied. The main problem faced in manufacturer of hard and high precision components is the selection of optimum combination of cutting parameters for achieving required quality of surface finish with maximum production rate. This problem can be solved by development of mathematical model and execution of experiments by RSM. A face centred central composite design (FCCD), which comes under the RSM approach, with cutting parameters (cutting speed, feed rate and depth of cut) was used for statistical analysis. A second-order regression model were developed to correlate the cutting parameters with surface roughness, tool vibration and material removal rate. Consequently, numerical and graphical optimization were performed to obtain the most appropriate cutting parameters to produce the lowest surface roughness with minimal tool vibration and maximum material removal rate using desirability function approach. Finally, confirmation experiments were performed to verify the pertinence of the developed mathematical models.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.95-96
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.546-546
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• 2008

Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.513-514
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• 2010

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.700-705
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• 2003

In this paper, an extended process model is proposed for the application of flexible belt grinding equipment as utilized in robotic grinding. The analytical and experimental results corresponding to grinding force, material removal rate (MRR) and contact area in the robotic grinding shows the difference between the conventional grinding and the flexible robotic grinding. The process model representing the relationship between the material removal and the normal force acting at the contact area has been applied to robotic programming and control. The application of the developed model in blade grinding demonstrates the effectiveness of proposed process model.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.5
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• pp.62-66
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• 2004

A study for investigating the effects of the cutting conditions(feed rate, radial depth of cut, cutting speed) and the tool diameter on the circumferential geometry of the cyl indrically end-mi1led workpiece is described. In this work, the circumferential geometry is characterized by the roundness error. Experimental results show that the circumferential geometry is directly affected by the material removal per tooth,which is defined as a function of the cutting speed, the feed rate and the radial depth of cut. And, the radial depth of cut is revealed to be the most critical condition among them. It is also found that the roundness error decreases when the tool diameter is larger under the same cutting conditions.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.30 no.2
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• pp.8-14
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• 2007

The powder blasting process has become an important machining technique for the cost effective fabrication of micro devices. This process is similar to sand blasting, and effectively removes hard and brittle materials. A large number of investigations on the abrasive jet machining with such output parameters as material removal rate, penetration and surface roughness have been carried out and reported by various authors. To achieve higher surface roughness, to increase material removal rate and to identify the influence of blasting parameters on the output parameters, we use the taguchi method which is one of the design methods of experiments. We can select process parameters to optimize the blasting process of glass. Experimental results indicate that the taguchi method is useful as a robust design methodology for the powder blasting process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.358-363
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• 2010

The polishing pad is important element for polishing characteristic such as material removal rate(MRR) and within wafer non-uniformity(WIWNU) in the chemical mechanical planarization(CMP). The result of the viscoelasticity measurement shows that 1st elastic modulus is increased and 2nd elastic modulus is decreased when the top pad is thickened. The finite element analysis(FEA) was conducted to predict characteristic of polishing behavior according to the pad thickness. The result of polishing experiment was similar with the FEA, and it shows that the 1st elastic modulus affects instantaneous deformation of pad related to MRR. And the 2nd elastic modulus has an effect on WIWNU due to the viscoelasticity deformation of pad.