• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.330-330
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• 2009

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.806-810
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• 1995

Electron swarm studies to derive electron collision cross sections of atoms and molecules from measurements of electron swarm data are reviewed. Stress is placed on those using molecular gas-rare gas mixtures.

• KIEAE Journal
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• v.1 no.2
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• pp.47-54
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• 2001

Single sound absorbers such as porous materials, panels, and Helmholts resonators have limited performance with some extents of frequency region. For example, porous materials do not attenuate low frequency sounds, while panels do not absorb high frequency sounds. Composite absorption structure with coverings, porous materials, and air gaps are an alternative for wide band sound absorption. Slits, panels, perforated panels are those materials for coverings, glass wool, mineral wool, polyester, and polyurethane are frequently used porous materials. Air gap between the porous material and background surface is one of major factors which governs the absorption characteristics of composite absorption structures, especially in the low frequency area. Calculations and measurements show that the absorption coefficients of composite absorption structure, in mid and low frequency bands, are getting higher with increased air gaps. Perforated panels rather than slits and panels are good coverings with higher number as far as absorption coefficient is concerned. Perforated panels with porous materials and 37 cm of air gaps in background have high absorption coefficients for all frequency bands, above 0.7 to 1.0. All measurements are performed in reverberation chamber, Mokpo National University, according to ISO 354 and ISO 3382.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.10-14
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• 2008

In this paper, abnormal heating of circuit breaker in panel board by poor connection was studied. Firstly, calculation method of contact resistance shown in IEC 60943 was examined. Secondly, concerning abnormal heating of circuit breaker in panel board, field measurements were performed. Field measurements showed that locally abnormal heating by poor connection could be detected, therefore, in that case, immediate action was needed. Finally, experiments regarding abnormal heating between terminal of circuit breaker and electric wire were conducted. The results showed that abnormal heating above $180^{\circ}C$ was measured. Also, in the results of analysis of electrical waveforms according to load current, voltage drop occurred around poor connection, and the oxide was generated according to mechanical vibration. In order to prevent electrical disaster caused by poor connection, adequate torque should be applied to electrical connection, and periodic check-ups are needed.

• Journal of Fashion Business
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• v.17 no.3
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• pp.30-47
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• 2013

In the modern fashion industry, efficiency has been increasing thanks to development of computer graphics, IT technology, and digitalization. Unlike the past when fashion design heavily depended on handwork, digitalization of fashion industry makes fabrication time shorter and enables designers to adopt comprehensive expression, generating high value-added product. The Apparel CAD, an example of the digitalized fashion industry, has been developed from 2D system into a system providing 3D simulation. Digital clothing can be determined as an activity of designers using the tool in order to fabricate pattern and simulate its designed clothes in the virtual space of computer. In this study, physical properties of eight materials, which can be utilized on a par with current fashion trend, have been specified. For more sophisticated investigation, external appearance of the material was investigated by 3D scanning. In order to examine the physical properties of fabric specimens, KES(Kawabata Evaluation System) measurements and other physical property measurements were made. With the results, virtual material and clothes were simulated via CLO 3D, one of 3D apparel CAD systems. Then, virtual fabrics and clothes of similar types were generated and analyzed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1075-1079
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• 2005

The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.675-678
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• 2004

[ $CuAlO_2$ ] was used as P-type transparent conducting oxide. $CuAlO_2$ ceramics was obtained from heating a stoichiometric mixture of $Cu_2O$ and $Al_2OH_3$ at $1200^{\circ}C$ for 6h. $CuAlO_2$ ceramics were doped by the rate of 0, 5, 7 and 10% of the $BeSO_4{\cdot}4H_2O$. Sintered ceramics were investigated by X-ray diffraction (XRD) and electrical measurements. The room temperature conductivity of the ceramics, which were doped with $BeSO_4{\cdot}4H_2O$ 5wt% was of the order of $3.19\times10^{-3}S\;cm^{-1}$, and the density was $4.98g/cm^3$. Therefor the conductivity and density in $BeSO+4{\cdot}4H_2O$ 5wt% were better than other cases. Additionally, Seebeck cofficient measurements revealed that these ceramics were p-type semiconductors and the ceramic conductivity increased with the growth temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.938-942
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• 2008

Electrical and optical properties of semitransparent Ag and Al layer were studied, which are used for the electrodes in top-emission organic light-emitting diodes. Sheet resistance and transmittance of visible light through a thin layer were measured and analyzed. Several thin metal layers of Ag and Al were deposited onto a glass substrate up to a thickness of 50 nm using a thermal evaporation. Sheet resistance measurements show that a layer thickness is needed more than 15 nm and 20 nm for Ag and Al, respectively, when a proper sheet resistance is assumed to be less than $50{\Omega}/sq$. From the measurements of transmittance of visible light through a thin-metal layer, metallic behavior was observed when the layer thickness is over 25 nm for both films. Thus, from a study of sheet resistance and transmittance of visible light, a minimum proper thickness of semitransparent metal layer is 20 nm and 25 nm for Ag and Al, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.83-83
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• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• Nuclear Engineering and Technology
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• v.48 no.3
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• pp.820-830
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• 2016

Pipe wall thinning by flow-accelerated corrosion and various types of erosion is a significant and costly damage phenomenon in secondary piping systems of nuclear power plants (NPPs). Most NPPs have management programs to ensure pipe integrity due to wall thinning that includes periodic measurements for pipe wall thicknesses using nondestructive evaluation techniques. Numerous measurements using ultrasonic tests (UTs; one of the nondestructive evaluation technologies) have been performed during scheduled outages in NPPs. Using the thickness measurement data, wall thinning rates of each component are determined conservatively according to several evaluation methods developed by the United States Electric Power Research Institute. However, little is known about the conservativeness or reliability of the evaluation methods because of a lack of understanding of the measurement error. In this study, quantitative models for UT thickness measurement deviations of nuclear pipes and fittings were developed as the first step for establishing an optimized thinning evaluation procedure considering measurement error. In order to understand the characteristics of UT thickness measurement errors of nuclear pipes and fittings, round robin test results, which were obtained by previous researchers under laboratory conditions, were analyzed. Then, based on a large dataset of actual plant data from four NPPs, a quantitative model for UT thickness measurement deviation is proposed for plant conditions.