• Title/Summary/Keyword: Material Constants

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Annealing Effect and Tunability of BaZr0.08Ti0.92O3 Polycrystal Grown in N2 Gas Atmosphere by Floating Zone Technique (Floating Zone Technique법으로 질소분위기 하에서 성장한 BaZr0.08Ti0.92O3 다결정의 Tunability 및 열처리 효과)

  • Hwang, Ho-Byong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.11
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    • pp.1178-1185
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    • 2004
  • In the atmosphere of $N_2$ gas, BaZ $r_{0.08}$ $Ti_{0.92}$ $O_3$ polycrystal was grown by floating zone technique using BaZ $r_{0.08}$ $Ti_{0.92}$ $O_3$ ceramics as a feed and SrTi $O_3$(1l0) single cystal as a seed. The dielectric constant and loss at 10 kHz, 100 kHz, and 1 MHz for the as-grown sample were measured as a function of temperature in the temperature range between -10$0^{\circ}C$ and 150 $^{\circ}C$ to find a dielectric peak with frequency dispersion at Curie point. The hysteresis loop showed that the grown sample had very small polarization which was 0-0.01 $\mu$C/$\textrm{cm}^2$ for the applied dc-electric fields from -7 kV/cm to +7 kV/cm. However, the normal hysteresis loop was appeared after oxygen annealing. The electric-field dependence of the dielectric constant for both the as-grown and the post-annealed samples was studied by measuring the dielectric constants as a function of the biased-electric fields and their tunability was figured out from it at room temperature(27 $^{\circ}C$) and cryotemperature( -73$^{\circ}C$). Tunability for the as-grown sample was 51 % and the figure of merit 20.4 at 10kHz with the biased electric-field of 12 kV/cm. The tunability for the grown sample may be increased up to 80 % if the electric field of 25 kV/cm is applied. Tunability for the post-annealed sample was 41 % and the figure of merit 10.3 at 10 kHz with the biased electric-field of 12 kV /cm. Post-annealing improved the crystallinity of the as-grown sample but decreased its tunability.ability.

A Study on EM Wave Absorber for Electromagnetic Wave Environment of Wireless LAN at 5.2 GHz (5.2 GHz 무선 LAN의 전자파 환경 대책용 전파흡수체에 관한 연구)

  • Yoo, Gun-Suk;Choi, Dong-Soo;Kim, Dong-Il
    • Journal of Navigation and Port Research
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    • v.34 no.1
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    • pp.15-19
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    • 2010
  • Recently, the wireless LAN system is rapidly growing because of its convenience of high speed communication. However, the wireless LAN systems at indoor places occur multi-propagation path by reflected waves from walls, ceilings, floors, and desks. Multipath problems cause transmission errors and degradation of communication speed. These problems can be solved by using EM wave absorbers. In this paper, we analyzed property of Graphite and derived the optimum ratio of Graphite: CPE to develop EM wave absorber for the wireless LAN system. First, we fabricated several samples in different composition ratios of Graphite and CPE, and then measured the reflection coefficient of each samples. Material constants of permittivity and permeability were calculated using the measured data and designed EM wave absorber. Secondly, the EM wave absorber was fabricated and tested on the base of the simulation data. As a result, it showed that the EM wave absorber in 1.7 mm thickness with the ratio of Graphite: CPE=50:50 wt.% has excellent absorption ability more than 27 dB at 5.2 GHz.

Study of characteristics of $AgGaS_2$/GaAs epilayer by hot wall epitaxy (HWE 방법에 의한 $AgGaS_2$/GaAs epilayer 성장과 특성)

  • Hong, K.J.;Jeong, J.W.;Bang, J.J.;Jin, Y.M.;Kim, S.H.;Yoe, H.S.;Yang, H.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.84-91
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    • 2002
  • The stochiometric composition of $AgGaS_2$/GaAs polycrystal source materials for the $AgGaS_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$/GaAs has tetragonal structure of which lattice constant an and Co were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$/GaAs by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by $\alpha=8.695{\times}10^{-4}$ eV/K, and $\beta=332K$. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2$/GaAs epilayer, we have found that crystal field splitting ${\Delta}Cr$ was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

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Practical Guide to the Characterization of Piezoelectric Properties (압전재료의 기초 물성 측정)

  • Kang, Woo-Seok;Lee, Geon-Ju;Jo, Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.5
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    • pp.301-313
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    • 2021
  • Theoretical background for the meaning of various piezoelectric properties can be easily found in a number of textbooks and academic papers. In contrast, how they are actually measured and characterized are rarely described, though this information would be the most important especially to the researchers who just started working on the field. It follows that this report was intended to provide a practical guidance for measuring basic but essential properties of ferroelectric-based piezoelectric materials. The discussion begins with how to measurement dielectric properties such as dielectric permittivity and loss (dissipation factor), followed by piezoelectric properties such as piezoelectric constants, electromechanical coupling factor, and quality factor as well as ferroelectric features, i.e., electric field dependent polarization hysteresis. Though our discussion here is limited to the techniques that are already well-standardized, it is expected to make a seed to be developed into more challenging and creative ones.

“Aluminium Nitride Technology-a review of problems and potential"

  • Dryburgh, Peter M.
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.75-87
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    • 1996
  • This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

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The Fabrication and Characteristic for Narrow-band Pass Color-filter Deposited by Ti3O5/SiO2 Multilayer (Ti3O5/SiO2 다층박막를 이용한 협대역 칼라투과필터 제작 및 특성연구)

  • Park, Moon-Chan;Ko, Kyun-Chae;Lee, Wha-Ja
    • Journal of Korean Ophthalmic Optics Society
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    • v.16 no.4
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    • pp.357-362
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    • 2011
  • Purpose: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer were fabricated, and their characteristics and structures were studied. Methods: the optical constants, n and k, of the $Ti_3O_5$ and $SiO_2$ thin films were obtained from the transmittances of their thin film. The narrow-band pass color-filters were designed with these optical constants and the AR coating of the filter was also designed. $Ti_3O_5/SiO_2$ multilayer filters were made by electron beam evaporation apparatus and the transmittaces of the filters were measured by spectrophotometer. the number of layers and the thicknesses of filters were calculated from the cross section of filters by SEM image and the composition of filters was analysed by XPS analysis. Results: The optimization of AR coating for the narrow-band pass color-filter was [air$|SiO_2(90)|Ti_3O_5(36)|SiO_2(5)|Ti_3O_5(73)|SiO_2(30)|Ti_3O_5(15)|$ glass], and the optimization of filter layer for the color filter was [air$|SiO_2(192)|Ti_3O_5(64)|SiO_2(102)|Ti_3O_5(66)|SiO_2(112)|Ti_3O_5(74)|SiO_2(120)|Ti_3O_5(68)|SiO_2(123)|Ti_3O_5(80)|SiO_2(109)|Ti_3O_5(70)|SiO_2(105)|Ti_3O_5(62)|SiO_2(99)|Ti_3O_5(63)|SiO_2(98)|Ti_3O_5(51)|SiO_2(60)|Ti_3O_5(42)|SiO_2(113)|Ti_3O_5(88)|SiO_2(116)|Ti_3O_5(68)|SiO_2(89)|Ti_3O_5(49)|SiO_2(77)|Ti_3O_5(48)|SiO_2(84)|Ti_3O_5(51)|SiO_2(85)|Ti_3O_5(48)|SiO_2(59)|Ti_3O_5(34)|SiO_2(71)|Ti_3O_5(44)|SiO_2(65)|Ti_3O_5(45)|SiO_2(81)|Ti_3O_5(52)|SiO_2(88)|$ glass]. It was known that the color-filters fabricated by the simulation data were composed of 41 layers by SEM image and the top layer of filters was $SiO_2$ layer and the filters were composed of $SiO_2$/$Ti_3O_5$ multilayer by XPS analysis. It was also known that the mixed thin film of TiO2 and $Ti_3O_5$ was made during the deposition of the $Ti_3O_5$ material. Conclusions: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer of 41 layer were fabricated, and it was known that the mixed form of TiO2 and $Ti_3O_5$ thin film was made during the deposition of the $Ti_3O_5$ material.

Simulation of D-limonene Separation from Mandarine Extract in Simulated Moving Bed (SMB) (감귤 추출물로부터 D-리모넨 분리를 위한 유사 이동층 크로마토그래피(SMB) 전산모사)

  • Kim, Tae Ho;Ko, Kwan Young;Kim, In Ho
    • Korean Chemical Engineering Research
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    • v.54 no.1
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    • pp.81-88
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    • 2016
  • Limonene is orange flavored natural material that is mainly contained in mandarine and lemon peels. D-limonene was extracted from cold-storaged mandarine peel by using Soxhlet extractor at $120^{\circ}C$ for 2 hours with ethanol as solvent. Henry constants of d-limonene and impurity were calculated as $H_{Lim}=8.55$ and $H_{imp}=0.223$ from the result of HPLC analysis. 4-bed SMB of limonene simulation with $0.46{\times}25cm$ columns was conducted by using Aspen chromatography program. Then effective condition for purity was found by changing $m_2$ and $m_3$ values in triangle diagram. The highest purity was 98.59% at $m_2=2.57$, $m_3=9.55$. For this case, feed, desorbent, extract, and raffinate flow rates were 1 mL/min, 1.19 mL/min, 0.857 mL/min and 1.34 mL/min, respectively. Scale-up simulation was also conducted by increasing column diameter from 0.46 cm to 1.6 cm for getting the same efficiency. The increased flow rates were 12 mL/min, 14 mL/min, 10 mL/min, and 16 mL/min for feed, desorbent, extract, and raffinate. It was possible to scale-up with maintaining same limonene purity because linear isotherms of limonene and impurity were assumed.

Characteristics of Autogenous Shrinkage for Concrete Containing Blast-Furnace Slag (고로슬래그를 함유한 콘크리트의 자기수축 특성)

  • Lee Kwang-Myong;Kwon Ki-Heon;Lee Hoi-Keun;Lee Seung-Hoon;Kim Gyu-Yong
    • Journal of the Korea Concrete Institute
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    • v.16 no.5 s.83
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    • pp.621-626
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    • 2004
  • The use of blast-furnace slag (BFS) in making not only normal concrete but also high-performance concrete has several advantages with respect to workability, long-term strength and durability. However, slag concrete tends to show more shrinkage than normal concrete, especially autogenous shrinkage. High autogenous shrinkage would result in severe cracking if they are not controlled properly. Therefore, in order to minimize the shrinkage stress and to ensure the service life of concrete structures, the autogenous shrinkage behavior of concrete containing BFS should be understood. In this study, small prisms made of concrete with water-binder (cement+BFS) ratio (W/B) ranging from 0.27 to 0.42 and BFS replacement level of $0\%$, $30\%$, and $50\%$, were prepared to measure the autogenous shrinkage. Based on the test results, thereafter, material constants in autogenous shrinkage prediction model were determined. In particular, an effective autogenous shrinkage defined as the shrinkage that contributes to the stress development was introduced. Moreover, an estimation formula of the 28-day effective autogenous shrinkage was proposed by considering various W/B's. Test results showed that autogenous shrinkage increased with replacement level of BFS at the same W/B. Interestingly, the increase of autogenous shrinkage is dependent on the W/B at the same content of BFS; the lower W/B, the smaller increasing rate. In concluding, it is necessary to use the combination of other mineral admixtures such as shrinkage reducing admixture or to perform sufficient moisture curing on the construction site in order to reduce the autogenous shrinkage of BFS concrete.

Design of a Broadband Printing RFID Tag Antenna with Low Performance Degradation Due to Nearby Dielectric Material (근접 유전체에 의한 성능 열화가 적은 광대역 프린팅 태그 안테나 설계)

  • Ji, Sung-Hwan;Han, Won-Keun;Park, Ik-Mo;Choo, Ho-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.8
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    • pp.694-700
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    • 2009
  • In this paper, we propose a RFID tag antenna with low performance degradation due to nearby dielectric materials. The proposed antenna is designed to be appropriate for ink printing fabrication. The antenna is designed to operate in UHF band of $860{\sim}960$ MHz. The antenna uses a T-matching network in the middle of the main body and two parasitic patches in vicinity for complex conjugate matching with a commercial tag chip. In addition, the two parasitic patches induce currents at different dielectric constants of nearby dielectric materials. This can minimize the performance degradation due to nearby dielectric materials. The measured results show the half power matching bandwidth from 844 MHT to 1,268 MHz. It exhibits the reading distance of about 3.5 m in free space when the tag antenna is used with the commercial reader antenna (transmitting power of 20 dBm and the reader antenna gain of 6 dBi). When the tag is attached on dielectric materials of wood and FR4, the resulting reading distances are 2.61 m and 2.51 m, respectively.

Instantaneous Compliance and Creep Compliance functions of Early-Age Concrete under Quasi-Instantaneous Loading (준-순간 하중에 의한 초기재령 콘크리트의 순간 및 크리프 컴플라이언스 함수)

  • Oh Byung-Hwan;Choi Seong-Cheol;Park Ho
    • Journal of the Korea Concrete Institute
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    • v.17 no.1 s.85
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    • pp.11-18
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    • 2005
  • In order to accurately assess the stresses occurring in the early-age concrete, a compliance function which can consider the characteristics of early-age concrete is required. Existing compliance functions, however, have the limit that they have been deduced from the data of hardened concrete and therefore, do not take into account the fast development of material properties in early-age concrete. Furthermore, the distinction between instantaneous compliance and creep compliance is not clear in the existing experimental method. The purpose of present study is to propose a compliance function which can describe the rapid change of hardening processes in early-age concrete. To this end, a test method which can estimate the instantaneous compliance without creep effects in the early-age concrete was suggested first. Based on the suggested experimental method, tests on the instantaneous as well as creep compliance were performed using MTS automatic servo-loop test machine. The test results showed that both instantaneous and aging viscoelastic compliance, which are constants in B3 model, were functions in terms of age of concrete especially at early ages. Therefore, the modified compliance function based on B3 model was proposed to provide more realistic prediction on the behavior of early-age concrete. It is expected that the present model allows more realistic evaluation of varying stresses in concrete structures at early ages.