• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.183-186
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• 1995

The fabrication of dielectric multilayer mirror(DMM) optimized at the wavelength of 1.55$\mu\textrm{m}$ and its spectral properties were investigated. The materials used in the fabrication of DMM are TiO$_2$-SiO$_2$, which have the advantage of yielding high reflectance for relatively small numbers of layers. The optical constants of TiO$_2$single film were obtained by using a modified envelope method. The reflectances of DMMs with 3,7,11 and 23 layers were 58%, 89%, 97% and 99.9% at the wavelength of 1.55$\mu\textrm{m}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.18-21
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• 1995

In this study, crystallization, water swelling and dielectric properties of Li$_2$O-MgO-MgF$_2$-SiO$_2$System glass ceramics were investigated. Base glass melted at 1450$^{\circ}C$ and crystallized through heat treatment. The optimum heat treatment schedule was 460$^{\circ}C$ for nucleation and 640$^{\circ}C$, 1100$^{\circ}C$ for crystallization. The Principle crystalline phase was lithium fluorhectorite. Lithium fluorhectorite was the crystal phase which it was influenced water swelling. Samples progressed 2 minutes later they have rapid hydration at forced water swelling condition. Also value of dielectric constants have approximately 10 at 100kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.71-73
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• 1995

In this work, we synthsized GaN powders by the direct reactions of Ga with NH$_3$at the temperature range of 950∼1150$^{\circ}C$ and we growth the GaN thin films on Si and sapphire substrates using the synthesized GaN powders by the vapor phase epitaxy method. The synthesized powder had hexagonal crystal structures with lattice constants of a$\sub$0/=3.1895${\AA}$, c$\sub$0/=5.18394${\AA}$. The reaction rates of GaN were increased with both reaction time and temperature, however it did not depends on the flow rates of NH$_3$. The island type GaN crystals were grown on (0001) sapphire substrates and fast lateral growth of GaN on (111) Si substrate than sapphire was observed in our experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.743-745
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• 2002

Pyroelectric and dielectric properties of modified PZT thin film and bulk ceramics were studied. In case of bulk specimens were prepared by conventional ceramic process and thin films with same composition and (111) preferred orientation were prepared by the sol-gel process. Their crystal structure, pyroelectric and dielectric properties were investigated after poling at $150^{\circ}C$ for 30 min for bulk ceramics and no poling treatment, respectively. Dielectric constants and losses of bulk and thin film were 600, 875 and 0.028, 0.025, respectively. Pyroelectric coefficients obtained were $50nC/cm^2K$ and $30nC/cm^2K$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.70-73
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• 1989

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})O_3-Ba(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3(0.12{\leq}x{\leq}0.21, 0.24{\leq}y{\leq}0.33$) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1050 [$^{\circ}C$], 2[hr]. Morphotropic phase boundary region was chosen for the composition. 0.55 PZN-0.21 BZN-0.24 PT specimen had the highest value of relative dielectric constants, 5353. The curie temperature of specimens were increased linearly with PT content. Near the morphotropic phase boundary, electro-mechanical coupoling factor and mechanical quality factor of the specimens had the highest values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.582-585
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• 2004

Pb0.5Sr0.5TiO3 (PST) thin films were fabricated by the alkoxide-based sol-gel process using spin-coating method on Pt/Ti/SiO2/Si substrate. The PST films annealed from 500C to 650C for 1h show a perovskite phase and dense microstructure with a smooth surface. The grain size and dielectric constant of PST films increases with the increase in annealing temperature, which reduces the SiO2 equivalent thickness of the PST film. The crystallinity or internal strain in the PST thin films analyzed from the diffraction-peak widths correlate well with the decrease in the dielectric losses. The dielectric constants and dielectric loss (%) of the PST films annealed at 650c (teq : 0.89 nm) were 549 and 0.21%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.198-198
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• 2010

The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-ramp in the range from 190nm to 2100nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.12
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• pp.1357-1365
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• 2009

In this study, we enhance the numerical approach of Lee et al.$^{(1)}$ to spherical indentation technique for property evaluation of hyper-elastic rubber. We first determine the friction coefficient between rubber and indenter in a practical viewpoint. We perform finite element numerical simulations for deeper indentation depth. An optimal data acquisition spot is selected, which features sufficiently large strain energy density and negligible frictional effect. We then improve two normalized functions mapping an indentation load vs. deflection curve into a strain energy density vs. first invariant curve, the latter of which in turn gives the Yeoh-model constants. The enhanced spherical indentation approach produces the rubber material properties with an average error of less than 3%.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.6
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• pp.724-730
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• 2006

Fracture behavior of brittle solids is closely related to microcracking. A meso-scale analysis method using the natural element method is proposed for the analysis of brittle microcracking solids. The microcracking is assumed to occur along Voronoi edges in the Voronoi diagram generated using the nodal points as the generators. The mechanical effect of microcracks is considered by controlling the material constants in the neighborhood of the microcracks. The meso-analysis method is applied to the simulation of the microcracking behaviors of brittle solids subjected to tensile macrostress. The method is also applied to the analysis of the propagation of a macrocrack accompanied by the coalescence with microcracks formed near the macrocrack-tip.

• Structural Engineering and Mechanics
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• v.51 no.3
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• pp.361-375
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• 2014

The main aim of this paper is to investigate the relationship between thickness and height of the axially symmetric cylindrical reinforced concrete (RC) walls by the help of a meta-heuristic optimization procedure. The material cost of the wall which includes concrete, reinforcement and formwork, was chosen as objective function of the optimization problem. The wall thickness, compressive strength of concrete and diameter of reinforcement bars were defined as design variables and tank volume, radius and height of the wall, loading condition and unit cost of material were defined as design constants. Numerical analyses of the wall were conducted by using superposition method (SPM) considering ACI 318-Building code requirements for structural concrete. The optimum wall thickness-height relationship was investigated under three main cases related with compressive strength of concrete and density of the stored liquid. According to the results, the proposed method is effective on finding the optimum design with minimum cost.