• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1060-1064
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• 2002

We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.103-110
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• 2014

Sisal fiber, an agricultural resource abundantly available in china, has been used as raw material to prepare activated carbon with high surface area and huge pore volume by chemical activation with zinc chloride. The orthogonal test was designed to investigate the influence of zinc chloride concentration, impregnation ratio, activation temperature and activation time on preparation of activated carbon. Scanning electron micrograph, Thermo-gravimetric, $N_2$-adsorption isotherm, mathematical models such as t-plot, H-K equation, D-R equation and BJH methods were used to characterize the properties of the prepared carbons and the activation mechanism was discussed. The results showed that $ZnCl_2$ changed the pyrolysis process of sisal fiber. Characteristics of activated carbon are: BET surface area was $1628m^2/g$, total pore volume was $1.316m^3/g$ and ratio of mesopore volume to total pore volume up to 94.3%. These results suggest that sisal fiber is an attractive source to prepare mesoporous high-capacity activated carbon by chemical activation with zinc chloride.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1139-1145
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• 1998

In this paper, to fabricate a superconducting fault current limiter(FCL) of thick film type, $YBa_2Cu_3O_X superconducting thick films were fabricated by surface diffusion process using the screen printing method. Powder mixture of $3BaCuO_2$+2CuO was screen printed on $Y_2BaCuO_5$(d=15mm). And critical current densities of the thick films were observed as the sintering temperature(92$0^{\circ}C$~95$0^{\circ}C$) and holding time(2h~10h). Based on experimental data, the thick films for superconducting FCL were sintered at $940^{\circ}C$ in 2 hours. The superconducting FCL with a current limiting area of 1mm wide and 66mm long was prepared on $Y_2BaCuO_5$ substrate. To measure the characterization of the fabricated FCL, an alternating voltage (60Hz) was applied to the FCL in 77K liquid nitrogen. At an applied voltage of 4V, the FCL was limited from 20A into 0.6A not farther than 0.5ms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.9-10
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• 2007

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition(ALD). And we studied the electrical characterization of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3\;at\;350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Through TEM(Transmission Electron Microscope), XRD(X-ray Diffraction), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of thin Hf metal layer for the better $HfO_2$/Si interface property was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.916-919
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• 2000

A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. The main idea of this research is to provide a distinctive solution for the measurement of both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$3l/, of ferroelectric thin films and also thick films. In general, to get these two coefficients of thin films, two different measuring systems are required. Here, we propose the improved method for the evaluation of these two coefficients with single equipment and with the relatively convenient procedure. The two-step loading process of applying the both positive and the negative pressure has been designed to acquire the piezoelectric coefficients. These results have beer calibrated for both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$31/, of thin films. In the first stage of the experiments, we have obtained d$\sub$33/ of 108pC/N and d$\sub$31/ of 57pC/N for the PZT thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.3-4
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• 2005

The Pseudo-MOSFET measurements technique has been used for the electrical characterization of the nano SOL Silicon islands for the Pseudo-MOS measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo-MOS was not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device was dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100nm SOI was obtained by thinning the silicon film of standard thick SOI. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo-MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching process dependency is greater in the thinner SOI and related to original SOI wafer quality.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.455-456
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• 2007

Optically transparent, highly conductive coating have been major theme of thin film science efforts for some years. In this work, t-MWNT(thin Multi-walled Carbon Nanotubes) are acid treated, then the stable dispersion of t-MWNTs in polar solvent such as alcohols, was achieved by sonication. The transparent conducting films are prepared using the one component solution of t-MWNT/epoxy binder via spray coating on glass substrate. The characterization of acid treated t-MWNTs was performed by Raman spectrometer. The opto-electrical properties of conducting films are analyzed by the binder concentration, and the effect of co-solvent on the compatibility and dispersibility of one component t-MWNT/epoxy binder solutions are discussed.

• Advances in aircraft and spacecraft science
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• v.9 no.4
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• pp.301-318
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• 2022

This paper presents the free vibration analysis of 3D printed sandwich beams by using high-order theories based on the Carrera Unified Formulation (CUF). In particular, the component-wise (CW) approach is adopted to achieve a high fidelity model of the printed part. The present model has been used to build an accurate database for collecting first natural frequency of the beams, then predicting Young's modulus based on an inverse problem formulation. The database is built from a set of randomly generated material properties of various values of modulus of elasticity. The inverse problem then allows finding the elastic modulus of the input parameters starting from the information on the required set of the output achieved experimentally. The natural frequencies evaluated during the experimental test acquired using a Digital Image Correlation method have been compared with the results obtained by the means of CUF-CW model. The results obtained from the free-vibration analysis of the FDM beams, performed by higher-order one-dimensional models contained in CUF, are compared with ABAQUS results both first five natural frequency and degree of freedoms. The results have shown that the proposed 1D approach can provide 3D accuracy, in terms of free vibration analysis of FDM printed sandwich beams with a significant reduction in the computational costs.

• Journal of Surface Science and Engineering
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• v.44 no.6
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• pp.246-249
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• 2011

Surface modification before coating nickel by coupling agents and/or etchant of glass did not provide enough adhesive strength of electroless nickel deposits on glass. Effect of heat treatments on hardness as well as adhesion of nickel deposits was studied by using tape test for adhesion, nanoindenter for hardness and glancing angle x-ray diffractometer (GAXRD) for phase characterization. Heat treatment improved hardness as well as adhesion. XRD results give that the improvements of adhesion and hardness are due to the formation of $NiSiO_4$ around the interface between the nickel deposits and the glass and the precipitation of $Ni_3P$ causing precipitation hardening, respectively. The details in effects of heat treatment on adhesion and hardness are described here.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.437-441
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• 2006

The red emitting OLEDs using $Alq_3$:Rubrene-GDI4234 phosphors have been fabricated and characterized . In the device fabrication, 2- TNATA [4,4',4' - tris (2- naphthylphenyl - phenylamino ) - tripheny lamine] as the hole injection material and NPB [N,N'-bis (1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as the hole transport material were deposited on the ITO(indium tin oxide)/glass substrate by vacuum evaporation. And then, red color emissive layer was deposited using $Alq_3$ as the host material and Rubrene(5,6,11,12-tetraphenylnaphthacene)-GDI4234 as the dopants. finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/$Alq_3$:Rubrene-GDI4234/$Alq_3$/LiF/Al were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Red OLEDs fabricated in our experiments showed the color coordinate of CIE(0.65, 0.35) and the maximum power efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.