• 전자공학회논문지D
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• 제35D권10호
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• pp.76-82
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• 1998

반도체 칩 내의 최소 선폭이 작아짐에 따라 광리소그래피에서 필연적으로 발생하는 상(image)의 왜곡 현상이 점점 심각해지고 있다. 이에 따라 광리소그래피의 해상 한계에서 발생하는 패턴의 왜곡 현상에 대한 보정(Optical Proximity Correction)은 이제 불가피한 기술이 되고 있다. 본 논문에서는 몬테-칼로 기법을 사용하여 왜곡 현상을 고려한 최적의 마스크의 패턴을 찾는 프로그램을 개발하였다. 이 프로그램을 기본적인 실제 메모리 셀 패턴에 적용시켜 수행해 본 결과 원래의 마스크 패턴보다 목표 상에 근접한 마스크 패턴을 효과적으로 구현할 수 있었을 뿐 아니라 공정 여유도의 향상도 기대할 수 있게 되었다.

• Journal of Chest Surgery
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• 제46권3호
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• pp.234-236
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• 2013

A 42-year-old woman with short-term memory loss visited Gangnam Severance Hospital, and her chest X-ray and computed tomography revealed a right anterior mediastinal mass. On hospital day two, she suddenly presented personality changes and a drowsy mental status, so she required ventilator care in the intensive care unit. She underwent thymectomy, and was pathologically diagnosed with thymoma, type B1. Her mental status eventually recovered by postoperative day 90. Paraneoplastic encephalopathy associated with thymoma is very rare, and symptoms can be improved by thymectomy. We report a case of paraneoplastic encephalopathy associated with a thymoma.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1576-1578
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• 1996

MgO protection layer in ac PDP prevents the dielectric layer from sputtering of ion in discharge plasma in addition to the contribution to the memory function and also have the additional important roll in lowering the firing Voltage due to a large secondary electron emission yield(${\gamma}$). The methode of Sputtering are easy to apply on mass production and to enlarge the size of the panel and are known to have the superior Adhesion and Uniformity of thin film. MgO protection layer of $1000{\AA}$ on dielectric layer by Reactive R.F magnetron sputtering is formed. Discharge characteristics have done with the formation of protection layer.

• BMB Reports
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• 제42권5호
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• pp.245-259
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• 2009

The process by which adult neural stem cells generate new and functionally integrated neurons in the adult mammalian brain has been intensely studied, but much more remains to be discovered. It is known that neural progenitors progress through distinct stages to become mature neurons, and this progression is tightly controlled by cell-cell interactions and signals in the neurogenic niche. However, less is known about the cell-intrinsic signaling required for proper progression through stages of adult neurogenesis. Techniques have recently been developed to manipulate genes specifically in adult neural stem cells and progenitors in vivo, such as the use of inducible transgenic mice and viral-mediated gene transduction. A critical mass of publications utilizing these techniques has been reached, making it timely to review which molecules are now known to play a cell-intrinsic role in regulating adult neurogenesis in vivo. By drawing attention to these isolated molecules (e.g. Notch), we hope to stimulate a broad effort to understand the complex and compelling cascades of intrinsic signaling molecules important to adult neurogenesis. Understanding this process opens the possibility of understanding brain functions subserved by neurogenesis, such as memory, and also of harnessing neural stem cells for repair of the diseased and injured brain.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.41-41
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• 2011

Flash memory에서 tunnel oxide film은 electron tunnelling 현상을 이용하여 gate에 전하를 전달하는 통로로 사용되고 있다. 특히, tunnel oxide film 내부의 charge trap 현상과 불순물이 소자 특성에 직접적인 영향을 주고 있어, 후속 N2O/NO 열처리 공정에서 SiO2/Si 계면에 nitrogen을 주입하여 tunnel oxide film 특성을 개선하고 있다. 따라서 N2O/NO 열처리 공정 최적화를 위해서는 tunnel oxide film 내 N 농도와 분포에 대한 정확한 평가가 필수적이다[1]. 본 실험에서는 low energy magnetic SIMS를 이용하여 N2O로 열처리된 tunnel oxide film 내의 N농도를 보다 정확하게 평가하고자 하였다. 사용된 시료는 Si substrate에 oxidation 이후 N2O 열처리를 진행하여 tunnel oxide를 형성시켰으며, 분석 impact energy는 surface effect최소화와 최상의 depth resolution 확보를 위해 250eV를 사용하였으며, matrix effect와 mass interference를 방지하기 위해 MCs+ cluster mode[2]로 CsN signal를 검출하였다. 실험 결과, 특정 primary beam 입사각도에서 nitrogen depth resolution 저하 현상이 발생하였고, SIMS crater 표면이 매우 거칠게 나타났다. 이에, Depth resolution 저하 현상을 개선하기 위해 극한의 glancing 입사각 조건으로 secondary extraction voltage 변화를 통해 depth resolution이 개선되는 최적의 impact energy와 primary beam 입사각 조건을 확보하였다. 그 결과 nitrogen의 depth resolution은 1.6nm의 depth resolution을 확보하였으며, 보다 정확한 N 농도와 분포를 평가할 수 있게 되었다.

• ETRI Journal
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• 제35권2호
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• pp.259-269
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• 2013

Android has become the most popular platform for mobile devices. However, Android still has critical performance issues, such as "application not responding" errors and hiccups resulting from garbage collection. Many phone vendors have tried to resolve the problems by characterizing and improving the performance. However, there are few insightful performance analysis tools for the Android-based systems. This paper presents AndroScope, which is a performance analysis tool for both the Android platform (Dalvik virtual machine, core libraries, Android libraries, and even Linux kernels) and its applications. To the best of our knowledge, this is the first tool to collect and analyze performance data from all the software layers of the Android-based systems. AndroScope offers a trace mechanism to collect such deep and wide performance data as hardware performance counters, time, and memory usage. In addition, the tool includes TraceBridge, which is a middleware for the fast handling of mass logs. Moreover, AndroScope offers an integrated graphical user interface with the Android software development kit to display a great volume of the detailed performance data.

• 기본간호학회지
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• 제9권3호
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• pp.473-483
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• 2002

The purpose of this study was to explore the attitude of student nurses to euthanasia. The convenient sample for this study consisted of 293 nursing students at a nursing college in Kyeongi Province. The data were collected from Oct. 15, 2002 to Oct. 30, 2002 and were analyzed using frequency, percentage, and $X^2$-test with the SAS package. The results of this study are as follow : 77.1% of students agreed to passive euthanasia and 70.6% subjects agreed to legalization of passive euthanasia. 78.5% of students can given an exact explanation of the concept of hospice. They obtained information about hospice from the mass media (1.1%), books (30.0%), friends and neighbors (3.4%), and religious groups (2.4%). The preferred place for death was reported to be home (75.4%), hospital (9.4%) or a peaceful place (6.3%). Fears of facing death were suffering in death (23.4%), grief of remaining family (21.2%), unknown about the other world (10.0%), separation from people who are loved (9.7%), forgotten from the people's memory(6.3%). In conclusion, the attitude of student nurses toward passive euthanasia approached a positive direction. But euthanasia was seen as dangerous and having multiple problems. Therefore the training for student nurses as health professionals should include content on dealing with hospice care and euthanasia.

• 전자공학회논문지A
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• 제33A권3호
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• pp.107-116
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• 1996

Recently, the flash memory has been abstracting great attention in the semiconductor market in the world because of its potential applications as mass storage devices. One of the most significant barriers to the scalling-down of the stacked-gate devices such as EPROM's and flash EEPROM's is the large subthreshold leakage in the unselected cells connected with the bit line of a selected cell in the array during programming. The large subthreshold leakge is majorly due to the capacitive coupling between the floating gates of the unselectd cells and the bit line of selected cell. In this paper, a new programming method to redcue significantly the drain turn-on leakage in the unselected cells during programming has been studied, where a little positive voltage (0.25-0.75V) is applied to the soruce during programming unlike the conventional programming method in which the source is grounded. The resutls of the PISCES simulations and the electrical measurements for the standard EPROM with 0.35.mu.m effective channel length and 1.0.mu.m effective channel width show that the subthreshold leakage in the unselectd cells is significantly large when the source is grounded, whereas it is negligibly small when the source is biased ot a little positive voltage during programming. On the other hadn, the positive bias on the source is found to have little effects on the programming speed of the EPROM.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.21-24
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• 2000

Ferroelectric YMnO$_3$ thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$ thin films were etched with C1$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin films is 285 $\AA$/min under C1$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$ film is approximately 65$^{\circ}$and free of residues at the sidewall.

• 한국항공우주학회지
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• 제36권6호
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• pp.616-620
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• 2008

인공위성체에서의 데이터 처리유닛은 고 신뢰성을 갖추어야 하고 또한 최근 탑재체의 요구사항이 늘어나면서 고속으로 데이터를 처리할 수 있어야 한다. 이러한 고 신뢰도 및 고속데이터 처리유닛을 개발하려면 우주용 프로세서의 활용, 고속 데이터 인터페이스 기술 활용, 대용량 메모리 제어기술 활용 및 우주 방사선 환경에서 데이터를 유지하는 기술을 모두 응용하여야 한다. 또한 단위 기능블록으로 모듈화하고 기능 확장이 용이한 구조로 디자인하여 활용성을 높이고자 한다.