• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.76-82
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• 1998

As the minimum feature size of a semiconductor chip gets smaller, the inevitable distortion of patterned image by optical lithography becomes the limiting factor in the mass production of VLSI. The optical proximity correction (OPC), which corrects pattern distortion that originates from the resolution limit of optical lithography, is becoming indispensable technology. In this paper, we describe a program that corrects optical proximity effect and thus finds the optimum mask pattern with a Monte-Carlo method. The program was applied to real memory cell patterns to produce mask patterns that generate image patterns closer to object images than original mask patterns, and increase of process margin is expected, as well.

• Journal of Chest Surgery
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• v.46 no.3
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• pp.234-236
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• 2013

A 42-year-old woman with short-term memory loss visited Gangnam Severance Hospital, and her chest X-ray and computed tomography revealed a right anterior mediastinal mass. On hospital day two, she suddenly presented personality changes and a drowsy mental status, so she required ventilator care in the intensive care unit. She underwent thymectomy, and was pathologically diagnosed with thymoma, type B1. Her mental status eventually recovered by postoperative day 90. Paraneoplastic encephalopathy associated with thymoma is very rare, and symptoms can be improved by thymectomy. We report a case of paraneoplastic encephalopathy associated with a thymoma.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1576-1578
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• 1996

MgO protection layer in ac PDP prevents the dielectric layer from sputtering of ion in discharge plasma in addition to the contribution to the memory function and also have the additional important roll in lowering the firing Voltage due to a large secondary electron emission yield(${\gamma}$). The methode of Sputtering are easy to apply on mass production and to enlarge the size of the panel and are known to have the superior Adhesion and Uniformity of thin film. MgO protection layer of $1000{\AA}$ on dielectric layer by Reactive R.F magnetron sputtering is formed. Discharge characteristics have done with the formation of protection layer.

• BMB Reports
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• v.42 no.5
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• pp.245-259
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• 2009

The process by which adult neural stem cells generate new and functionally integrated neurons in the adult mammalian brain has been intensely studied, but much more remains to be discovered. It is known that neural progenitors progress through distinct stages to become mature neurons, and this progression is tightly controlled by cell-cell interactions and signals in the neurogenic niche. However, less is known about the cell-intrinsic signaling required for proper progression through stages of adult neurogenesis. Techniques have recently been developed to manipulate genes specifically in adult neural stem cells and progenitors in vivo, such as the use of inducible transgenic mice and viral-mediated gene transduction. A critical mass of publications utilizing these techniques has been reached, making it timely to review which molecules are now known to play a cell-intrinsic role in regulating adult neurogenesis in vivo. By drawing attention to these isolated molecules (e.g. Notch), we hope to stimulate a broad effort to understand the complex and compelling cascades of intrinsic signaling molecules important to adult neurogenesis. Understanding this process opens the possibility of understanding brain functions subserved by neurogenesis, such as memory, and also of harnessing neural stem cells for repair of the diseased and injured brain.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.41-41
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• 2011

Flash memory에서 tunnel oxide film은 electron tunnelling 현상을 이용하여 gate에 전하를 전달하는 통로로 사용되고 있다. 특히, tunnel oxide film 내부의 charge trap 현상과 불순물이 소자 특성에 직접적인 영향을 주고 있어, 후속 N2O/NO 열처리 공정에서 SiO2/Si 계면에 nitrogen을 주입하여 tunnel oxide film 특성을 개선하고 있다. 따라서 N2O/NO 열처리 공정 최적화를 위해서는 tunnel oxide film 내 N 농도와 분포에 대한 정확한 평가가 필수적이다[1]. 본 실험에서는 low energy magnetic SIMS를 이용하여 N2O로 열처리된 tunnel oxide film 내의 N농도를 보다 정확하게 평가하고자 하였다. 사용된 시료는 Si substrate에 oxidation 이후 N2O 열처리를 진행하여 tunnel oxide를 형성시켰으며, 분석 impact energy는 surface effect최소화와 최상의 depth resolution 확보를 위해 250eV를 사용하였으며, matrix effect와 mass interference를 방지하기 위해 MCs+ cluster mode[2]로 CsN signal를 검출하였다. 실험 결과, 특정 primary beam 입사각도에서 nitrogen depth resolution 저하 현상이 발생하였고, SIMS crater 표면이 매우 거칠게 나타났다. 이에, Depth resolution 저하 현상을 개선하기 위해 극한의 glancing 입사각 조건으로 secondary extraction voltage 변화를 통해 depth resolution이 개선되는 최적의 impact energy와 primary beam 입사각 조건을 확보하였다. 그 결과 nitrogen의 depth resolution은 1.6nm의 depth resolution을 확보하였으며, 보다 정확한 N 농도와 분포를 평가할 수 있게 되었다.

• ETRI Journal
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• v.35 no.2
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• pp.259-269
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• 2013

Android has become the most popular platform for mobile devices. However, Android still has critical performance issues, such as "application not responding" errors and hiccups resulting from garbage collection. Many phone vendors have tried to resolve the problems by characterizing and improving the performance. However, there are few insightful performance analysis tools for the Android-based systems. This paper presents AndroScope, which is a performance analysis tool for both the Android platform (Dalvik virtual machine, core libraries, Android libraries, and even Linux kernels) and its applications. To the best of our knowledge, this is the first tool to collect and analyze performance data from all the software layers of the Android-based systems. AndroScope offers a trace mechanism to collect such deep and wide performance data as hardware performance counters, time, and memory usage. In addition, the tool includes TraceBridge, which is a middleware for the fast handling of mass logs. Moreover, AndroScope offers an integrated graphical user interface with the Android software development kit to display a great volume of the detailed performance data.

• Journal of Korean Academy of Fundamentals of Nursing
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• v.9 no.3
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• pp.473-483
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• 2002

The purpose of this study was to explore the attitude of student nurses to euthanasia. The convenient sample for this study consisted of 293 nursing students at a nursing college in Kyeongi Province. The data were collected from Oct. 15, 2002 to Oct. 30, 2002 and were analyzed using frequency, percentage, and $X^2$-test with the SAS package. The results of this study are as follow : 77.1% of students agreed to passive euthanasia and 70.6% subjects agreed to legalization of passive euthanasia. 78.5% of students can given an exact explanation of the concept of hospice. They obtained information about hospice from the mass media (1.1%), books (30.0%), friends and neighbors (3.4%), and religious groups (2.4%). The preferred place for death was reported to be home (75.4%), hospital (9.4%) or a peaceful place (6.3%). Fears of facing death were suffering in death (23.4%), grief of remaining family (21.2%), unknown about the other world (10.0%), separation from people who are loved (9.7%), forgotten from the people's memory(6.3%). In conclusion, the attitude of student nurses toward passive euthanasia approached a positive direction. But euthanasia was seen as dangerous and having multiple problems. Therefore the training for student nurses as health professionals should include content on dealing with hospice care and euthanasia.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.107-116
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• 1996

Recently, the flash memory has been abstracting great attention in the semiconductor market in the world because of its potential applications as mass storage devices. One of the most significant barriers to the scalling-down of the stacked-gate devices such as EPROM's and flash EEPROM's is the large subthreshold leakage in the unselected cells connected with the bit line of a selected cell in the array during programming. The large subthreshold leakge is majorly due to the capacitive coupling between the floating gates of the unselectd cells and the bit line of selected cell. In this paper, a new programming method to redcue significantly the drain turn-on leakage in the unselected cells during programming has been studied, where a little positive voltage (0.25-0.75V) is applied to the soruce during programming unlike the conventional programming method in which the source is grounded. The resutls of the PISCES simulations and the electrical measurements for the standard EPROM with 0.35.mu.m effective channel length and 1.0.mu.m effective channel width show that the subthreshold leakage in the unselectd cells is significantly large when the source is grounded, whereas it is negligibly small when the source is biased ot a little positive voltage during programming. On the other hadn, the positive bias on the source is found to have little effects on the programming speed of the EPROM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.21-24
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• 2000

Ferroelectric YMnO$_3$ thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$ thin films were etched with C1$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin films is 285 $\AA$/min under C1$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$ film is approximately 65$^{\circ}$and free of residues at the sidewall.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.36 no.6
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• pp.616-620
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• 2008

High reliability is the important parameter on designing satellite system and it is also important to design hish speed data processing unit. To make high speed satellite processing unit, it is needed to utilize space processor, high speed data interface technology, mass memory control technology and data protection technology under space radiation environment.