• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.219-222
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• 2003

Self-Assembled Monolayers(SAMs) by alkanethiol adsorption to thin metal film are widely being investigated for applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecular and bio molecular. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance in selective etching of thin metal film of Self- Assembled Monolayers. In this report, we present the micromachining thin metal film by Mask-Less laser patterning of alknanethiolate Self-Assembled Monolayers.

• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.35-40
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• 2008

Low power bridge type micro gas sensors were fabricated by micro machining technology with TMAH (Tetra Methyl Ammonium Hydroxide) solution. The sensing devices with different heater materials such as metal and poly-silicon were obtained using CMOS (Complementary Metal Oxide Semiconductor) compatible process. The tellurium films as a sensing layer were deposited on the micro machined substrate using shadow silicon mask. The low power micro gas sensors showed high sensitivity to NO with high speed. The pure tellurium film used micro gas sensor showed good sensitivity than transition metal (Pt, Ti) used tellurium film.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1921-1926
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• 2003

Nano-imprint technology has been vigorously studied by many researchers for it is one of the most promising technologies for manufacturing the pattern with its critical dimension below 100nm. In the nano-imprint technology, nano patterns are transferred on a polymer film and the transferred patterns are used as an etch mask to define the designed patterns on a substrate or a metal layer. To this end, it is important to keep the residual thickness of the imprinted polymer film uniform. In this study, a novel measurement technique to measure the residual thickness of films is proposed based on nanoindentation theory. This technique has advantages of saving time and measuring the residual thickness of highly-localized portions in comparison with other techniques, but has limitation of requiring calibration process.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.182-185
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• 2005

Indentation pattern and line pattern were machined on borosilicate(Pyrex 7740 glass) surface using the combination of mechanical machining by $Nanoi-indenter\circledR$ XP and HF wet etching, and a etch-mask effect of the affected layer of the nano-scratched and indented Pyrex 7740 glass surface was investigated. In this study, effects of indentation and scratch process with etching time on the morphologies of the indented and scratched surfaces after isotropic etching were investigated from an angle of deformation energies.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.204-209
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• 2005

A small size broadband microstrip patch antenna with small ground plane has been fabricated using MEMS. Multiple layer substrates are used to realize small size and broadband characteristics. The microstrip patch is divided into 3 pieces and each patch is connected to each other using a metal microstrip line. The fabrication process is simple and only one mask is needed. Two types of microtrip antennas are fabricated. Type A is the micros trip antenna with metal lines and type B is the microstrip antenna without metal lines. The size of proposed microstip antenna is $8^{*}12^{*}2mm^{3}$ and the experimental results show that the antenna type A and type B have the bandwidth of 420 MHz at 5.3 GHz and 480 MHz at 5.66 GHz, respectively.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.603-604
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• 2006

A small size broadband microstrip patch antenna with small ground plane has been fabricated using MEMS. Multiple layer of high and low dielectric substrates are used to realize small size and broadband characteristics. The microstrip patch is divided into 4 pieces and each patch is connected to each other using a metal microstrip line. The fabrication process is very simple and only one mask is needed. Two types of microtrip antennas are fabricated. Type A is the microstrip antenna with metal lines and type B is the microstrip antenna without metal lines. The size of proposed microstip antenna is $8*12*2mm^3$ and the experimental results show that the antenna type A and type B have the bandwidth of 420MHz at 5.3 GHz and 480MHz at 5.66 GHz, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1272-1273
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• 2009

We demonstrate conformal phosphor coating and patterning methods on light emitting diodes (LEDs) using image processing based optofluidic maskless lithography (IP-OFML) system in microfluidic channels. IP-OFML allows a real-time detection and dynamic mask generation for packaging of randomly dispersed microchips. Our system detects each chip by considering rotation of the chip through image processing regardless of their arrangement error. Therefore, it precisely packages the chip making conformal polymer layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.501-504
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• 2014

This paper was developed and described core-process to implement low on resistance which was the most important characteristics of SJ (super junction) MOSFET. Firstly, using process-simulation, SJ MOSFET optimal structure was set and developed its process flow chart by repeated simulation. Following process flow, gate level process was performed. And source and drain level process was similar to genral planar MOSFET, so the process was the same as the general planar MOSFET. And then to develop deep trench process which was main process of the whole process, after finishing photo mask process, we developed deep trench process. We expected that developed process was necessary to develop SJ MOSFET for automobile semiconductor.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.357-361
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• 2005

Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.21-22
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• 2008

$SF_6/O_2$ 플라즈마 에칭을 통한 반도체 칩의 3차원 집적에 응용되는 through-silicon-via (TSV) 구조형성 연구를 수행하였다. Si via 형상은 $SF_6$, $O_2$의 가스 비율과 에칭이 되는 Silicon 기판의 온도에 의존함을 알수 있었다. 또한 Si via 형상에서 최소의 언더컷 (undercut) 과 측벽에칭 (local bowing) 은 black Si이 나타나는 공정조건에서 나타남을 확인하였다. 더 나아가 저온을 이용한 via 형성시 via 측벽에 형성되는 passivation layer와 mask의 성질이 저온으로 인해 high-aspect-ratio를 갖는 via를 형성할 수 있음을 알 수 있었다.