• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.105-109
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• 2019

Plasmons have conductive properties using the effect of amplifying magnetic and electric fields around metal particles. The collective movement of free electrons in metal particles induces and produces the generation of plasmon. Because the plasmon is concentrated on the surface of the nanoparticles, it is also called the surface plasmon. The polarizing effect of plasma on the surface is similar to the principle of surface currents occurring in insulators. In this study, it was found the conditions under which plasma is produced in SiOC insulators and studied the electrical properties of SiOC insulators that are improved in conductivity by plasmons. Due to the heat treatment temperature of thin film, plasma formation was shown differently, metal particles were used with normal aluminium, SiOC thin films were treated with heat at 60 degrees, conductivity was improved dramatically, and heat treatment at higher temperatures was found to be less conductivity.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.196-197
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• 2002

보편적으로 알려진 CoCr합금 수직기록매체의 경우, 기록매체에서 출력되는 신호의 크기가 작고 열적안정성이 떨어지는 문제점이 있다. 이러한 CoCr합금 수직기록매체를 대체할 기록 매체로 Co/Pd 다층박막에 관한 연구를 수행하였다. Co/Pt 및 Co/Pd계 다층박막은 수직배향성을 가지며 일찍부터 Magneto-optical 매체로 연구되었다. Co/Pd 다층박막은 자성재료와 비자성재료를 약 2~3개 원자층의 박막 두께(10$\AA$이하)로 번갈아 가며 진공증착한 것으로. CoCr합금계 수직기록매체에 비해 열적안정성이 뛰어나고 수직방향의 잔류 자화가 큰 장점을 가지고 있다. (중략)

• Journal of Magnetics
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• v.8 no.4
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• pp.133-137
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• 2003

The magnetostatic properties of the as-deposited and annealed at T=300 and 400$^{\circ}C$ Ni films were investigated employing both magneto-optical magnetometer and VSM. The Ni films of 50∼200 nm thicknesses were prepared by DC magnetron sputtering technique. The strong influence of annealing temperature on magnetostatic properties of the studied samples was discovered. For the annealed Ni films, the increase of the coercivity H$_c$ (up to 4 times) in comparison with that of as-deposited samples was revealed. The obtained results were explained by using crystallographic structural data of the samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.802-805
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• 2000

Anistropic [Ta/NdFeB/Ta] thin film was sputtered on heated Si substrate by Nd$\_$17/Fe$\_$74/B$\_$9/ target. The grain size of the films increased according to the increase of substrate temperature, and the film deposited at 650$^{\circ}C$ showed optimum coercivity. 4$\pi$M$\_$r/, $\_$i/H$\_$c/ and (BH)$\_$max/ measured perpendicular to the film plane of thin film deposited at 650$^{\circ}C$ are 12.3 kG, 9.9 kOe and 37 MGOe, respectivly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.633-636
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• 1999

In this study, we have fabricated amorphous FeZrBAg thin films with low core losses by using DC magnetron sputtering method. After deposition, rotational field annealing (RFA) method was performed in the dc field of 1.5 kOe. The amorphous FeZrBAg thin films produced by annealing at 35$0^{\circ}C$ was founded to have high permeability of 8680 at 100 MHz, 0.2 mOe, low coercivity of 0.86 Oe high magnetization of 1.5 T and very low core loss of 1.3 W/cc at 1 MHz, 0.IT respectively. Excellent soft magnetic properties in a amorphous FeZrBAg thin films in the present study are presumably the homogeneous formation of very fine bcc $\alpha$-Fe crystalline with the 8.2 nm in an amorphous FeZrBAg thin film matrix.

• Journal of Magnetics
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• v.5 no.4
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• pp.116-119
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• 2000

Magnetic field dependence of magnetization reversal in Co/Pt multilayers was quantitatively investigated. Serial samples of Co/Pt multilayers were prepared by dc-magnetron sputtering under various Ar pressures. Magnetization reversal was monitored by magnetization viscosity measurement and direct domain observation using a magneto-optical microscope system, and the wall-motion speed V and the nucleation rate R were determined using a domain reversal model based on time-resolved domain reversal patterns. Both V and R were found to be exponentially dependent on the applied reversing field. From the exponential dependencies, the activation volumes for wall motion and nucleation could be determined, based on a thermally activated relaxation model, and the wall-motion activation volume was found to be slightly larger than the nucleation activation volume.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.533-537
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• 1995

The stress in Permalloy thin films fabricated by rf magnetron sputtering on the Si (100) substrates has been investigated with various deposition parameters such as the film thickness, argon pressure, and rf power. The internal stress changes from compressive to tensile with higher input power and argon pressure. The cause of stress variations with these deposition parameters is discussed in terms of thermal and/or intrinsic stress changes. Low coercive force is obtained from Permalloy thin films at a condition of low compressive stress.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.627-630
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• 1995

BaM films have a lot of advantage of chemical stability and mechanical stability as compared with a metallic thin film. In this paper, (Ba.Pb)M films have been prepared by using dc magnetron sputtering system and the dependences of their crystallographic characteristics and magnetic properties on oxygen pressure($Po_{2}$) were studied. The films prepared at $Po_{2}$ of around 0.02mTorr exhibit a fine particle-like structure and ${\Delta}{\theta}_{50}$ is as small as $1^{\circ}$. $Hc_{\bot},\;Hc_{//}$ and Ms of (Ba.Pb)M films are 700-800Oe, 200Oe and 180-230emu/cc, respectively.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.2
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• pp.38-42
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• 2001

We investigated physical properties of ion-beam mixed Fe/si multilayerd films(MLF) prepared by rf sputtering onto glass substrates at room temperature. Such an ion-beam treatment has led to noticeable changes in the structural and physical properties of the MLF: the formation of a new phase which is characterized by a crystalline silicide with a low coercivity and Tc = 550 K. In contrast to the as-prepared state, the ion-beam mixed MLF contains two magnetic phases. One of them is a very soft (Hc < 2 Oe), but microscopically homogeneous one with M$\sub$eff/=6.7 kG.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.179-179
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• 2016

희토류계 영구자석은 높은 보자력과 잔류 자화을 가지고 있어 자기기록저장매체, MEMS(엑츄에이터), 센서 등의 응용 분야에 적용시키기 위해 다양한 연구들이 진행되고 있다. 하지만 희토류계 원소의 수급 및 가격의 문제점으로 친환경자석으로의 전환 및 희토류나 중희토류를 사용하지 않는 비희토류계 영구자석을 개발하는 연구에 대한 필요성이 대두되고 있다. 이 중 Fe-N 계 자성 물질인 $Fe_{16}N_2$는 포화 자화 값이 현재까지의 자성물질 중 가장 높은 값(240emu/g)을 나타내며 상대적으로 높은 결정자기이방성 상수를 가지고 있어 비희토류계 영구자석 물질 중 하나로 주목받고 있다. 본 연구에서는 $Fe_{16}N_2$ 박막을 얻기 위해 DC Magnetron Sputtering 방법을 이용하여 Si wafer 위에 박막을 증착하고 증착공정 조건 중 질소 유량 및 Sputtering Power를 변수로 따른 박막의 성장, 조직변화, 자성 특성을 관찰을 통해 최적의 공정 조건을 찾고자 하였다. $N_2$ 가스 유량 변화에 따른 박막의 성장 속도는 거의 변화가 없었으며 $N_2$ 가스 유량의 증가에 따라 박막 내 Fe의 함유량은 감소하였다. 모든 공정 조건에서 $Fe_3N$, $Fe_4N$, $Fe_{16}N_2$ 상들이 섞여 성장하였으며 XRD를 통한 상분석과 더불어 VSM을 통한 자성 특성을 분석해본 결과 $Fe_{16}N_2$의 분율이 가장 높게 성장된 공정 조건은 Power는 200W, $N_2$ 가스 유량은 20sccm이었으며 이 조건에서 2.45T의 포화 자화 값과 1.4T의 잔류 자화 값을 얻을 수 있었다.