• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• 제5B권3호
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• pp.267-271
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• 2005

This paper deals with two kinds of novel shape switched reluctance motors (SRM) with magnetic barriers in order to improve operating performances of prototype. The magnetic barriers make rotor poles more saturated, and consequently inductance profiles are distorted. The changed inductance affects input current shape and eventually torque characteristics. In order to analyze the complicated flux pattern of the SRM with magnetic barriers and its terminal characteristics simultaneously, coupled field circuit modeling method is used. The finite element method is used to model the nonlinear magnetic field, and coupled to the circuit model of the SRM overall system. After experimental results are presented to prove the accuracy of the method, the several analysis results are compared, and the improved rotor shape is presented.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.93-93
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• 2003

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
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• pp.100-101
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• 2005

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2012년도 자성 및 자성재료 국제학술대회
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• pp.104-105
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• 2012

The temperature dependence of the effective magnetic anisotropy constant K(T) of ferrite nanoparticles is obtained based on the measurements of SQUID magnetometry. For this end, a very simple but intuitive and direct method for determining the temperature dependence of anisotropy constant K(T) in nanoparticles is introduced in this study. The anisotropy constant at a given temperature is determined by associating the particle size distribution f(r) with the anisotropy energy barrier distribution $f_A(T)$. In order to estimate the particle size distribution f(r), the first quadrant part of the hysteresis loop is fitted to the classical Langevin function weight-averaged with the log?normal distribution, slightly modified from the original Chantrell's distribution function. In order to get an anisotropy energy barrier distribution $f_A(T)$, the temperature dependence of magnetization decay $M_{TD}$ of the sample is measured. For this measurement, the sample is cooled from room temperature to 5 K in a magnetic field of 100 G. Then the applied field is turned off and the remanent magnetization is measured on stepwise increasing the temperature. And the energy barrier distribution $f_A(T)$ is obtained by differentiating the magnetization decay curve at any temperature. It decreases with increasing temperature and finally vanishes when all the particles in the sample are unblocked. As a next step, a relation between r and $T_B$ is determined from the particle size distribution f(r) and the anisotropy energy barrier distribution $f_A(T)$. Under the simple assumption that the superparamagnetic fraction of cumulative area in particle size distribution at a temperature is equal to the fraction of anisotropy energy barrier overcome at that temperature in the anisotropy energy barrier distribution, we can get a relation between r and $T_B$, from which the temperature dependence of the magnetic anisotropy constant was determined, as is represented in the inset of Fig. 1. Substituting the values of r and $T_B$ into the $N{\acute{e}}el$-Arrhenius equation with the attempt time fixed to $10^{-9}s$ and measuring time being 100 s which is suitable for conventional magnetic measurement, the anisotropy constant K(T) is estimated as a function of temperature (Fig. 1). As an example, the resultant effective magnetic anisotropy constant K(T) of manganese ferrite decreases with increasing temperature from $8.5{\times}10^4J/m^3$ at 5 K to $0.35{\times}10^4J/m^3$ at 125 K. The reported value for K in the literatures is $0.25{\times}10^4J/m^3$. The anisotropy constant at low temperature region is far more than one order of magnitude larger than that at 125 K, indicative of the effects of inter?particle interaction, which is more pronounced for smaller particles.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• 제5B권1호
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• pp.39-42
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• 2005

Though full 3D analysis is the proper method to analyze the hybrid stepping motor (HSM), it has weak points in the areas of computation time and complexity. This paper introduces 2D FEA using a virtual magnetic barrier for the axial cross section to save computation time. For the purpose of 2D FEA, the virtual magnetic barrier and equivalent permanent magnet model of HSM are proposed. This result is compared with that of experimental and 3D analysis, considered as a reference result.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.897_898
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• 2009

This paper deal with the shape design of the flux barrier to maximize the torque density and minimize the torque ripple in IPM type BLDC motor. The variation of magnetic torque and reluctance toque according to the flux barriers is analyzed in the 120 conducting period. From the result, we confirmed the barrier can be quite worthwhile for the better performance of IPM type BLDC motor

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.131-132
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• 2004

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.187.2-187.2
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• 2008

• 공학논문집
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• 제6권2호
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• pp.33-38
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• 2004

To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. Toinvestigate the reliability of the MTJs dependent on the bottom electrode, time-dependent dielectric breakdown (TDDB) measurements were carried out under constant voltage stress. The Weibull fit of out data shows clearly that $t_{BD}$ scales with the thickness uniformity of MTJs tunnel barrier. Assuming a linear dependence of log($t_{BD}$) on stress voltages, we obtained the lifetime of $10^4$years at a operating voltage of 0.4 V at MTJs comprising CoNbZr layers. This study shows that the reliabilityof new MTJs structure was improved due to the ultra smooth barrier, because the surface roughness of the bottom electrode influenced the uniformity of tunnel barrier.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).