• Title/Summary/Keyword: Magnetic Barrier

Search Result 159, Processing Time 0.054 seconds

A comparison of the characteristics of External type UHF partial discharge sensor for metal covered barriers in GIS (GIS 스페이서의 에폭시 주입구 장착형 UHF PD 센서의 성능 비교)

  • Hwang, Chul-Min;Kim, Young-No;Lee, Young-Sang;Kwak, Joo-Sik;Park, Ki-Jun
    • Proceedings of the KIEE Conference
    • /
    • 2005.07c
    • /
    • pp.2265-2267
    • /
    • 2005
  • We present detailed studies of externally applicable UHF PD sensors for a metal covered epoxy barrier with a small opening of epoxy injection-hole. The sensors were attached at the surface of injection hole of a metal covered epoxy barrier. 3-Dimensional electro magnetic simulations were performed to analyze electric-field distribution of the GIS and epoxy barrier with injection hole. Sensor structures were designed and analyzed using the 3-D EM simulator then fabricated for experimental verification. Sensor performance was measured in terms of spectral response and detected peak power. Real scale GIS and epoxy barriers were used to test and measure various aspect of performance of the sensors.

  • PDF

The Study on the improvement of Characteristics of Permanent Magnet Synchronous Motor for Washing Machine (세탁기용 영구자석 동기전동기의 특성 향상에 관한 연구)

  • Jung, Dae-Sung
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.29 no.10
    • /
    • pp.47-53
    • /
    • 2015
  • IPMSM(Insert Permanent Magnet Synchronous Motor) is a very high degree of freedom in the design according to the permanent magnet insertion position. And the performance of IPMSM is affected a lot on barrier shape which determines the magnetic flux path from magnet. Thus the position of permanent magnet and the barrier shape has to be designed by considering both specification and operation condition. In the paper, the permanent magnet and barrier shape which is suitable for direct drive motor of washing machine has been studied. In addition, in order to verify the validity of the study, the test was evaluated by making a prototype motor.

THREE-DIMENSIONAL CRYSTALLIZING ${\pi}$-BONDING , ${\pi}$-FAR INFRARED RAYS AND NEW SPACE ENERGY RESOURCE

  • Oh, Hung-Kuk
    • Proceedings of the Korea Society for Energy Engineering kosee Conference
    • /
    • 1996.04a
    • /
    • pp.73-87
    • /
    • 1996
  • The outer-most electrons of metal atoms and the remining valence electrons of any molecular atoms make three dimensional crystallizing $\pi$-bondings. The electrons on the $\pi$-bonding orbital rotate clockwise or counter-clockwise and they then make electro-magnetic waves between atoms on the orbital because electron move between plus charged ions. The three dimensional crystallizing $\pi$-bonding orbitals are quantum-mechanically modeled by a cyclic Kronig-Penny Model and energy band structures are analyzed with their potential barrier thickness. The waves generated between plus charged ions are the particular $\pi$-far infrared rays, which have dual properties between material and electro-magnetic waves and can be measured not by modern electro-magnetic tester but biosensor such as finger's force tester. Because the $\pi$-rays can be modulated with electro-magnetic waves it can be applied for harmful electro-magnetic wave killers. Because the $\pi$-rays make new three dimensional crystallizing $\pi$-bonding orbitals in the material the food and drink can be transformed into a helpful physical constitutional property for human health. Distinction between crystalline and amorphous metals is possible because very strong crystalline $\pi$-bonding orbitals can not easily be transformed into another. The $\pi$-rays can also be applied for biofunctional diagnostics and therapy. Gravitational field is one of the electro-magnetic fields. And also magnetic field and gravitational force field make charge's movement. ($\times$ = q, : magnetic field, : force field, q: plus charge, : velocity field)

  • PDF

Magnetic Tunnel Junctions with Magnesium Oxide Barriers

  • Nagahama Taro;Moodera Jagadeesh S.
    • Journal of Magnetics
    • /
    • v.11 no.4
    • /
    • pp.170-181
    • /
    • 2006
  • Spin dependent tunneling has enormously activated the field of magnetism in general, and in particular spin transport studies, in the past ten years. Thousands of articles related to the subject have appeared with many fundamental results. Importantly, there is great interest in their potential for application. There was another surge of activity in this field since the past five years - created by the theoretical prediction of a large tunnel magnetoresistance that arises due to band symmetry matched coherent tunneling in epitaxial magnetic tunnel junctions with (001) MgO barrier and experimentally well demonstrated. This further development in the field has boosted the excitement in both fundamental science as well as the possibility of application in such as magnetic random access memory, ultra sensitive read heads, biosensors and spin torque diodes. This review is a brief coverage of the field highlighting the literature that deals with magnetic tunnel junctions having epitaxial MgO tunnel barriers.

Magnetic Properties of Ni/BN/Co Trilayer Structure: A First Principles Study

  • Hashmi, Arqum;Hong, Jisang
    • Journal of Magnetics
    • /
    • v.20 no.3
    • /
    • pp.201-206
    • /
    • 2015
  • Using the Vienna ab initio simulation package (VASP) incorporating both semiempirical and nonlocal van der Waals interaction, the structural, adsorption, and magnetic properties of Ni/BN/Co systems were investigated. We proposed that the relative spin direction of Ni and Co magnets can be easily tuned, because the total energy difference between ferromagnetic (FM) and antiferromagnetic (AFM) states is small. Despite this feature, very interestingly, both Ni and Co layers manifest half-metallic state, whereas the spacer BN layer becomes weak metal for one monolayer (ML) thickness and an insulating barrier for two ML thicknesses. The half-metallic behavior of the magnetic layers seems very robust, because it is independent of the magnetic coupling between Ni and Co. This finding indicates that the Ni/BN/Co system can be used as a potential candidate for tunneling magnetoresistance system.

AC Loss Characteristics of Multifilamentary HTS Tapes

  • Amemiya, Naoyuki
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
    • /
    • 2000.02a
    • /
    • pp.69-72
    • /
    • 2000
  • AC losses in multifilamentary HTS tapes can be classified to hysteresis loss, coupling loss, and eddy current loss from the viewpoint of their generation mechanism. From the viewpoint of the major magnetic field component generating them, they can be classified to magnetization loss, transport loss, and total loss. Dividing superconductor to fine filaments, twisting filaments bundle and increasing transverse resistivity are effectively reduce magnetization loss and total loss when the external magnetic field is relatively large. Recently, twisted multifilamentary Bi 2223 tapes with pure silver matrix were fabricated and the reduction of magnetization loss was proved experimentally in the parallel magnetic field to the tape wide face. However, when the perpendicular magnetic field is applied, increasing transverse resistivity is required essentially to reduce the AC losses. The transverse resistivity was increased successfully by the introduction of resistive barrier between filaments.

  • PDF

Rapid Theraml Annealing Effect on the Magnetic Tunnel Junction with MgO Tunnel Barrier (MgO 절연막을 갖는 자기 터널 접합구조에서의 급속 열처리 효과)

  • Min, Kiljoon;Lee, Kyungil;Kim, Taewan;Jang, Joonyeon
    • Journal of the Korean Magnetics Society
    • /
    • v.25 no.2
    • /
    • pp.47-51
    • /
    • 2015
  • To achieve a high tunneling magneto resistance (TMR) of sputtered magnetic tunnel junctions (MTJs) with an MgO barrier, the annealing process is indispensable. The structural and compositional changes as consequences of the annealing greatly affect the spin-dependent transport properties of MTJs. Higher TMR could be obtained for MTJs annealed at higher annealing temperature. The diffusion of Ru, Mn and/or Ta in the MTJs may occur during annealing process, which is known to be detrimental to spin-dependent tunneling effect. The rapid thermal annealing (RTA) process was used for annealing the MTJs with synthetic antiferromagnets. To suppress the diffusion of Mn, Ru and/or Ta in the MTJs, the process time and temperature of RTA were minutely controlled.

Large Tunneling Magnetoresistance of a Ramp-type Junction with a SrTiO3 Tunneling Barrier

  • Lee, Sang-Suk;Yoon, Moon-Sung;Hwang, Do-Guwn;Rhie, Kung-Won
    • Journal of Magnetics
    • /
    • v.8 no.2
    • /
    • pp.89-92
    • /
    • 2003
  • The tunneling magnetoresistance (TMR) of a ramp-edge type junction with SrTiO$_3$barrier layer has been stud-ied. The samples with a structure of glass/NiO(600${\AA}$)/Co(100${\AA}$)/SrTiO$_3$(400 ${\AA}$)/SrTiO$_3$(20-100${\AA}$)/NiFe(100${\AA}$) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics were obtained from a ramp-type tunneling junctions, having the dominant difference between two different external magnetic fields (${\pm}$100 Oe) perpendicular to the junction edge line. In the SrTiO$_3$ barrier thickness of 40${\AA}$, the TMR was 52.7% at a bias voltage of -50 mV The bias voltage dependence of resistance and TMR in a ramp-type tunneling junction was similar with those of the layered TMR junction.