• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1696-1698
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• 1999

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.387-394
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• 2004

Diamond films were deposited on the cemented tungsten carbide WC-Co cutting insert substrates by using both microwave plasma chemical vapor deposition(MWPCVD) and radio frequency plasma chemical vapor deposition (RFPCVD) from $CH_4$$-H_2$$-O_2$ gas mixture. Scanning electron microscopy and X-ray diffraction techniques were used to investigate the microstructure and phase analysis of the materials and Raman spectrometry was used to characterize the quality of the diamond coating. Diamond films deposited using MWPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show a dense, uniform, well faceted and polycrystalline morphology. The compressive stress in the diamond film was estimated to be (1.0∼3.6)$\pm$0.9 GPa. Diamond films which were deposited on the WC-Co cutting insert substrates by RFPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show relatively good adhesion, very uniform, dense and polycrystalline morphology.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.97-97
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• 2000

In this thesis, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using Microwave Plasma Enhanced Chemical Vapor deposition (MWPCVD) method. Effects of each experimental parameters of MWPCVD including methane concentrations, oxygen additions, operating pressure, deposition time, etc. on the growth rate and crystallinity were investigated. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases respectively. As a methane concentration below 4%, the deposited films having well-defined facets could be obtained. As the methane concentration increases over 4%, the shape of films gradually changed into a amorphos form. The best crystallinity of the film at 3% in the Raman spectroscopy. Addition of oxygen to the methane-hydrogen mixture gave an improved film crystallinity at 50% oxygen concentration due to its more effectiveness in the selective removal of the non-diamond phased compared to the of H atom. on the contrary, the growth rate generally decreased by oxygen to from the more stable CO and CO2 is responsible for such an effect. Upon increasing the operating pressure and time, increased of growth rate and crystallinity were increased simultaneously.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1490-1492
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• 1998

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.809-814
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• 1998

In this study, the metastable state diamond thin films have been deposited on Si substrates from methand-hydrogen and oxygen mixture usin gMicrowave Plasma Enhanced Chemical Vapor Deposition (MWPCVD) method. effects experimental parameters MWPCVD including methan concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)∼5%(5sccm). oxygen concentration of 0∼80%(2.4sccm). operating pressure of 30Torr∼ 70Torr, deposition time of 1∼32hr. SEM, WRD, and Raman spectroscopy were employed to analyse the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non=diamond phases respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.289-292
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• 1998

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including CH$_4$ concentrations, Oxygen additions, Operating pressure, deposition time, etc. on the growth rate and crystallinity were investigated. The best crystallinity of the finn at 3% methane concentration addition of oxygen to the CH$_4$-$H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure and time, the growth rate and crystallinity were increased simultaneously.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.18-20
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• 1997

The fabrication process of silicon-diamond(SOD) structure wafer were studied. Microwave plasma chemical vapor deposition (MWPCVD) and annealing technology were used to synthesize diamond film with high resistivity and thermal conductivity. Bonding and etchback silicon-on-diamond (BESOD) were utilized to form supporting substrate and single silicon thin layer of SOD wafer. At last, a SOD structure wafer with 0.3~1$\mu\textrm{m}$ silicon film and 2$\mu\textrm{m}$ diamond film was prepared. The characteristics of radiation for a CMOS integrated circuit (IC) fabricated by SOD wafer were studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.905-908
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• 2000

The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.