• Structural Engineering and Mechanics
• /
• 제70권4호
• /
• pp.395-405
• /
• 2019

In the present work, the effects of cutting parameters on surface roughness parameters (Ra), tool wear parameters (VBmax), tool vibration (Vy) and material removal rate (MRR) during hard turning of AISI 4140 steel using coated carbide tool have been evaluated. The relationships between machining parameters and output variables were modeled using response surface methodology (RSM). Analysis of variance (ANOVA) was performed to quantify the effect of cutting parameters on the studied machining parameters and to check the adequacy of the mathematical model. Additionally, Multi-objective optimization based desirability function was performed to find optimal cutting parameters to minimize surface roughness, and maximize productivity. The experiments were planned as Box Behnken Design (BBD). The results show that feed rate influenced the surface roughness; the cutting speed influenced the tool wear; the feed rate influenced the tool vibration predominantly. According to the microscopic imagery, it was observed that adhesion and abrasion as the major wear mechanism.

• 한국결정성장학회지
• /
• 제28권1호
• /
• pp.51-56
• /
• 2018

PVT법으로 성장된 AlN 단결정의 표면 평탄화 최적화 하기 위하여 기계적 연마 후 $SiO_2$ slurry를 이용한 CMP 공정을 진행하였고 이에 따른 표면 형상, slurry 변화에 따른 가공 특성을 분석하였다. Slurry의 pH가 표면 연마 과정에 미치는 영향을 알아보기 위해 $SiO_2$ slurry의 pH를 조절하였으며, 제타전위측정기를 통해 각각의 pH에 따른 zeta potential의 영향과 MRR(material removal rate) 결과를 비교하였으며, 최종적으로 원자간력 현미경(atomic force microscope)을 이용한 표면 거칠기 RMS(0.2 nm)를 얻을 수 있었다.

• 한국정밀공학회지
• /
• 제19권5호
• /
• pp.149-158
• /
• 2002

Recently, the minimum line width shows a tendency to decrease and the multi-level increases in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. However there are several defects in CMF, such as micro-scratches, abrasive contaminations and non-uniformity of polished wafer edges. Wet etching process including spin-etching can eliminate the defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(Interlayer-Dielectric) was removed by CMP and wet etching process using DHF(Diluted HF) in order to investigate the possibility of planrization by wet etching mechanism. In the thin film wafer, the results were evaluated from the viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And the pattern step heights were also compared for the purpose of planarity characterization of the patterned wafer. Moreover, Chemical polishing process which is the wet etching process with mechanical energy was introduced and evaluated for examining the characteristics of planarization.

• 마이크로전자및패키징학회지
• /
• 제18권3호
• /
• pp.25-32
• /
• 2011

초고휘도 비극성 a-GaN LED를 위한 양질의 R-면 사파이어 기판을 제조하기 위해 절단, 연마공정에 대해서 연구하였다. 사파이어는 이방성이 큰 물질로서 R-면과 c-면의 기계적인 특성의 차이에 의해 기판 제조공정 조건이 영향을 받으며, c-면에 비해서 R-면은 이방성 크며 각 결정학적인 면에서의 이방성은 연마공정에는 큰 영향을 미치지 않으나 절단공정에 큰 영향을 미치는 것으로 나타났다. R-면 잉곳의 절단방향이 a-flat에 대해 $45^{\circ}$인 경우에 절단이 가장 효과적으로 이루어졌으며 양호한 절단품질을 얻을 수 있었다. 기계적인 연마가 이루어지는 래핑과 DMP(Diamond mechanical polishing) 공정에서는 c-면 기판과 연마율이 큰 차이가 나타나지 않았으나, 화학반응이 수반되는 CMP(Chemical mechanical polishing) 공정에서는 c-면 기판의 연마율이 R-면 기판의 약 2배 이상 큰 값을 가졌으며, 이는 c-면의 수화반응층 형성에 의한 영향으로 보여진다.

• 한국세라믹학회지
• /
• 제48권4호
• /
• pp.312-315
• /
• 2011

The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

• 한국정밀공학회지
• /
• 제30권11호
• /
• pp.1121-1128
• /
• 2013

Ultrasonic grinding system is that the ultrasonic vibration by ultrasonic actuator is applied on conventional grinding system during grinding process. The Ultrasonic vibration with a frequency of over 20kHz can reduce grinding forces and increase surface quality, material removal rate (MRR) and grinding wheel life. In addition, ultrasonic vibration assisted grinding can be used for the materials that are difficult to cut. In this paper, methodology for ultrasonic tools is studied based on finite element method, and in turn the ultrasonic tools are designed and fabricated. It is found that the ultrasonic tool can vibrate with a frequency of 20kHz and amplitude of $25{\mu}m$. In order to verify the machining performance, the grinding experiment is performed on titanium alloy. By applying ultrasonic vibration, the grinding force and temperature are reduced and MRR is increased compared with the conventional grinding.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.113-113
• /
• 2008

Cu CMP (Chemical Mechanical Planarization) has been used to remove copper film and obtain a planar surface which is essential for the semiconductor devices. Generally, it is known that chemical reaction is a dominant factor in Cu CMP comparing to Silicon dioxide CMP. Therefore, Cu CMP slurry has been regarded as an important factor in the entire process. This investigation focused on understanding the effect of corrosion inhibitor on copper surface and CMP results. Benzotriazole (BTA) was used as a corrosion inhibitor in this experiment. For the surface analysis, electrochemical characteristics of Cu was measured by a potentiostat and surface modification was investigated by X-ray photoelectron spectroscopy (XPS). As a result, corrosion potential (Ecorr) increased and nitrogen concentration ratio on the copper surface also increased with BTA concentration. These results indicate that BTA prevents Cu surface from corrosion and forms Cu-BTA layer on Cu surface. CMP results are also well matched with these results. Material removal rate (MRR) decreased with BTA concentration and static etch rate also showed same trend. Consequently, adjustment of BTA concentration can give us control of step height variation and furthermore, this can be applicable for Cu pattern CMP.

• 한국기계가공학회지
• /
• 제14권6호
• /
• pp.41-48
• /
• 2015

Stainless steel mesh has been used as a filter in various fields, including domestic, medical, etc. However, the surface before machining may have an adverse effect the product quality and performance because it is not smooth. Especially, adsorbed impurities in the surface result in difficulty in cleaning. Therefore, in this paper, we propose an improved surface quality through electrochemical polishing (ECP). Two electrodes, composed of STS304 (anode) and copper (cathode) underwent machining with two conditions according to polishing time and current density. As the polishing time and current density increase, the surface of curvature decreases, and roughness and material removal rate (MRR) improves. The machined surface roughness and image were obtained through the atomic force microscope (AFM) and stereoscopic microscope. The study also analyzed hydrophilic effect through contact angles. This obtains corrosion resistance, smoothness, hydrophilic property, etc.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.86-89
• /
• 2003

Chemical Mechanical Planarization(CMP) has been accepted as the most effective processes for ultra large scale integrated (ULSI) chip manufacturing. However, as the polishing process continues, pad pores get to be glazed by polishing residues, which hinder the supply of new slurry. And pad surface is ununiformly deformed as real contact distance. These defects make material removal rate(MRR) decrease with a number of polishied wafer. Also the desired within-chip planarity, within wafer non-uniformity(WIWNU) and wafer to wafer non-uniformity(WTWNU) arc unable to be achieved. So, pad conditioning in CMP Process is essential to overcome these defects. The eletroplated or brazed diamond conditioner is used as the conventional conditioning. And. allumina long fiber, the jet power of high pressure deionized water, vacuum compression. ultrasonic conditioner aided by cavitation effect and ceramic plate conditioner are once used or under investigation. But. these methods arc not sufficient for ununiformly deformed pad surface and the limits of conditioning effect. So this paper focuses on the characteristics of diamond conditioner which reopens glazed pores and removes ununiformly deformed pad away.

• 대한기계학회논문집A
• /
• 제32권9호
• /
• pp.761-769
• /
• 2008

The majority of mechanical parts are manufactured by milling machines. Hence, geometrically efficient algorithms for tool path generation and physical considerations for better machining productivity with guarantee of machining safety are the most important issues in milling tasks. In this paper, an optimized path generation algorithm for direction parallel milling which is commonly used in the roughing stage is presented. First of all, a geometrically efficient tool path generation algorithm using an intersection points-graph is introduced. Although the direction parallel tool path obtained from geometric information have been successful to make desirable shape, it seldom consider physical process concerns like cutting forces and chatters. In order to cope with these problems, an optimized tool path, which maintains constant MRR in order to achieve constant cutting forces and to avoid chatter vibrations at all time, is introduced and the result is verified. Additional tool path segments are appended to the basic tool path by using a pixel based simulation technique. The algorithm has been implemented for two dimensional contiguous end milling operations, and cutting tests are conducted by measuring spindle current, which reflects machining situations, to verify the significance of the proposed method.