• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.391-394
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• 1999

The diamond thin films are deposited on silicon using MPCVD(Microwave Plasma Chemical Vapor Deposition) method at various deposition microwave power and time. Diamond is deposited with 100 sccm H$_2$ and 2 sccm CH$_4$ by MPCVD. The crystallinity of diamond thin films were increased with increase of microwave power. The growth rate of diamond thin films were increased with increase of time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.229-233
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• 2011

Diamond thin films were deposited on pretreated Co cemented tungsten carbide (WC-6%Co) inserts as substrate by microwave plasma chemical vapor deposition (MPCVD) system, equipped with a 915MHz, 30kW generator for generating a large-size plasma. The substrates were pretreated with two solutions Murakami solution $[KOH:K_3Fe(CN)_6:H_2O]$ and nitric solution $[HNO_3:H_2O]$ to etch, WC and Co at cemented carbide substrates, respectively. The deposition experiments were performed at an input power of 10 kW and in a total pressure of 100 torr. The influence of various $CH_4$ contents on the crystallinity and morphology of the diamond films deposited in MPCVD was investigated using scanning electron microscopy (SEM) and Raman spectroscopy. The diamond film synthesized by the $CH_4$ plasma shows a triangle-faceted (111) diamond. As $CH_4$ contents was increased, the thickness of diamond films increased and the faceted planes disappeared. Finally, Faceted diamond changed into nano-crystalline diamond with random crystallinity.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.1
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• pp.33-38
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• 2002

In this study, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using microwave plasma enhanced chemical vapor deposition (MPCVD) method. Effects in experimental parameters of MPCVD including methane concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. Diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)~5%(5sccm), oxygen concentration of 0~80%(2.4sccm), operating pressure of 30Torr~70Torr, deposition time of 1~32hr. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases, respectively.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1349-1351
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• 2001

Polycrystalline diamond films are deposited by using a microwave plama CVC system, where the bias-enhanced nucleation (BEN) method is employed. Effects of the varying microwave power, the surface treatment by hydrogen plasma, and the cyclic hydrogen etching during deposition on the crystallinity as well as on the surface roughness of deposited films are examined by Raman spectroscopy, SEM, and AFM. A novel method for achieving a smoother diamond surface is also suggested through the indirect wafer bonding and back-side polishing.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1330-1332
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• 1998

Polycrystalline diamond films are deposited on a Si substrate by employing a 2.45 GHz $\mu$-wave plasma CVD system. Prior to depositing the diamond film, a DPR(diamond photo-resist) layer is coated to enhance the nucleation density. The growth rate of diamond films increases with the $\mu$-wave power and approaches to be about $1.5{\mu}m/hr$ at 1100 W. Structural properties of diamond films deposited are characterized from their SEM photographs, Raman spectra, and AFM surface images. Lager grain size, higher intensity of diamond peak, and smoother surface are observed for films deposited at a higher power. The possible mechanism on the diamond growth is also discussed to explain the experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.54-54
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.378-378
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• 2007

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.31-36
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• 2013

For the simplification of doping process in amorphous carbon film, arsenic (As) ions were implanted on the nucleated silicon wafer before the growth process. Then amorphous carbon films were grown at the condition of $CH_4/H_2=5%$ by microwave plasma chemical vapour deposition. Because the implanted seeds were grown at the high temperature and the implanted ions were spread, it was possible to reduce the process steps by leaving out the annealing process. When the implanted amorphous carbon films were electrically characterized in diode configuration, field emission current of $0.1mA/cm^2$ was obtained at the applied electric field of about $2.5V/{\mu}m$. The results show that the implanted As ions were sufficiently doped by the self-annealing process by using the growth after implantation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.387-387
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• 2011

탄소 나노튜브(Carbon nanotubes, CNTs)는 육각형 모양의 구조로서 오직 탄소만으로 이루어진 소재이다. CNT는 열전도율이 다이아몬드보다 약 2배 우수하고, 전기 전도는 구리에 비해 1,000배 높으며, 강도는 강철보다 100배나 뛰어나다. CNT의 이러한 특성을 이용한 트랜지스터, 태양전지, 가스 검출을 위한 고감도 센서, 나노 섬유, 고분자-탄소나노튜브 고기능 복합체 등 많은 분야에서 연구가 활발히 진행되고 있다. 또한 수직으로 성장된 탄소 나노튜브는 일반적인 재료에서는 보기 드물게 힘들게 직경이 나노 크기인 반면 길이는 수 mm까지 합성 되기 때문에 앞서 언급한 분야로의 활용이 더욱 유리하며, 그 중에서도 나노 섬유, 나노 복합체로서의 활용에 극히 유용하다. 이러한 이유로 수직 배열된 CNT 합성에 많은 연구가 집중 되고 있다. 여러 합성 방법 중 성장 변수를 비교적 용이하게 조절 가능한 열 화학 기상 증착법(Thermal chemical vapor deposition, TCVD)을 이용하여 수직 배열된 수 mm의 CNT를 합성한 연구 결과들이 보고된 바 있다. 그러나 앞선 연구결과들은 CNT의 성장속도가 느릴 뿐만 아니라 합성 시간이 길어질수록 성장 속도가 감소하는 경향을 보였다. 반면, 마이크로웨이브 플라즈마 화학 기상 증착법(Microwave plasma CVD, MPCVD)은 기존의 다른 TCVD에 비해 낮은 온도에서 CNT를 합성할 수 있는 장점을 가지며, 고출력(~600 W 이상)의 플라즈마를 사용하기 때문에 성장률이 높고 고밀도의 CNT 합성이 가능하다. 본 연구에서는 철을 촉매금속으로 사용하고 MPCVD을 이용하여 얇은 다중벽 CNT를 합성하였다. 철은 직류 마그네트론 스퍼터(D.C magnetron sputter)를 사용하여 증착하였다. 합성시 가스는 탄소 공급원인 메탄($CH_4$)과 함께 플라즈마 공급원인 수소($H_2$)를 사용하였다. 또한 산소($O_2$)의 주입 여부에 따른 CNT의 성장 속도와 성장 길이를 비교하였다. 산소를 주입하였을 때, CNT의 성장 속도와 길이 모두 크게 향상됨을 확인 할 수 있었다. 이는 촉매금속 표면의 비정질 탄소의 흡착으로 인해 활성화된 촉매금속의 반응시간을 증가시키기 때문이다. 성장된 CNT는 주사전자 현미경(Scanning Electron Microscopy, SEM)과 라만 분광법(Raman spectroscopy)을 통해 표면형상과 결정성을 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.176-176
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• 2007