• 전력전자학회논문지
• /
• 제21권2호
• /
• pp.117-125
• /
• 2016

In this paper, the inverter switch losses of BLDC motor for three types of PWM methods and power devices were analyzed. When the BLDC motor is driven at low currents, the inverter switch losses for MOSFET are low because MOSFET operates like resistance. However, the inverter switch losses for IGBT are higher than MOSFET due to its large turn-off losses. Moreover, synchronous rectification switching method is adaptable because MOSFET has 2-channel. So, MOSFET can be driven with more low impedance and losses. For low power inverter with MOSFET, the power losses of unified PWM are lower than that of unipolar and bipolar PWM. Proposed method and losses analysis results are verified by examination and simulation using Matlab/Simulink.

• 전력전자학회논문지
• /
• 제19권3호
• /
• pp.227-232
• /
• 2014

A highly efficient MOSFET inverter for single-phase grid-connected photovoltaic power generation systems is presented in this paper. It is a full-MOSFET version of the conventional transformerless full-bridge inverter with dual L-C filters using unipolar PWM. The key idea lies on smart pre switching(SPS), which can make the large switching loss due to a poor reverse recovery of the MOSFET's body diode reduced dramatically. The validity of the proposed inverter is verified by experiment.

• 전력전자학회논문지
• /
• 제26권6호
• /
• pp.429-436
• /
• 2021

The design of a gate driver power supply for a three-phase inverter using a silicon carbide (SiC) MOSFET. The requirements for the power supply circuit of the gate driver for the SiC MOSFET are investigated, and a flyback converter using multiple transformers is used to make the four isolated power supplies. The proposed method has the advantage of easily constructing the power supply circuit in a limited space as compared with a multi-output flyback converter using a single core. The power supply circuit for the three-phase SiC MOSFET inverter for driving an AC motor is designed and implemented. The operation and validity of the implemented circuit are verified through simulations and experiments.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2014년도 추계학술대회 논문집
• /
• pp.33-34
• /
• 2014

In this paper, the inverter switch losses of BLDC motor for three types of PWM method and power devices was analyzed. When BLDC motor is driven at low currents, inverter switch losses for MOSFET is low because MOSFET operates like resistance. But, inverter switch losses for IGBT is higher than MOSFET due to its large turn-off losses. For low power inverter with MOSFET, the power losses of unified PWM is lower than that of unipolar and bipolar PWM.

• 한국정보통신학회:학술대회논문집
• /
• 한국정보통신학회 2018년도 춘계학술대회
• /
• pp.173-174
• /
• 2018

논문은 MOSFET와 JLFET로 구성된 3D 인버터의 inter-layer dielectric (ILD)의 두께에 따른 하층 게이트에 의한 전기적 상호작용을 비교하였다. MOSFET와 JLFET 모두 ILD의 두께가 100 nm에서 문턱전압의 변화량이 크지 않았지만 100 nm에서 문턱전압의 변화량이 크게 증가하였다. 특히 JLFET의 문턱전압의 변화량이 MOSFET보다 2배 정도 크게 변화하여 하층 게이트에 의한 전기적인 영향을 더 크게 받는다.

• 센서학회지
• /
• 제27권3호
• /
• pp.160-164
• /
• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• 대한전기학회논문지
• /
• 제35권7호
• /
• pp.272-277
• /
• 1986

The system that follows to the resonance frequency of high frequency MOSFET inverter and varies according to the changes of load characteristics is proposed. Also we suggested a method how to select the resonant load type between series and parallel circuit for a given inverter type. It leads to the conclusion that in the case of high impedance loads, parallel resonant circuits are preferable, on the other hand, for low impedance loads, series resonant circuits are more preferable. For frequency tracking, a PLL circuit is used as main control element to detect the phase difference of current and voltage of load. The realized apparatus composed of control circuit and voltage type full-bridged MOSFET elements as main parts of inverter. A stable frequency follow-up characteristics are obtained for 1.2MHz, 1.5KW high frequency output and power is always supplied to the load with unity power factor.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2014년도 추계학술대회 논문집
• /
• pp.85-86
• /
• 2014

The paper presents a power supply of atmospheric-pressure plasma reactor based on SiC (Silicon Carbide) MOSFET resonant inverter. Thanks to the capacitive characteristic of capacitive coupling plasma reactor type, the LC series resonant inverter had been applied to take advantages of this topology with the implementation of SiC MOSFET power modules as switching power devices. Designation of gate driver for SiC MOSFET had been introduced by this paper. The 5kVp, 5kW power supply had also been verified by experimental results.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.359-359
• /
• 2010

IGBT(Insulated Gate Bipolar Transistor) 란 MOS(Metal Oxide Silicon) 와 Bipolar 기술의 결정체로 낮은 순방향 손실(Low Saturation)과 빠른 Speed를 특징으로 기존의 Thyristor, BJT, MOSFET 등으로 실현 불가능한 분양의 응용처를 대상으로 적용이 확대 되고 있고, 300V 이상의 High Power Application 영역에서 널리 사용되고 있는 고효율, 고속의 전력 시스템에 있어서 필수적으로 이용되는 Power Device이다. IGBT는 출력 특성 면에서 Bipolar Transistor 이상의 전류 능력을 가지고 있고 입력 특성 면에서 MOSFET과 같이 Gate 구동 특성을 갖기 때문에 High Switching, High Power에 적용이 가능한 소자이다. 반면에, Conventional IGBT는 MOSFET과 달리 IGBT 내부에 Anti-Parallel Diode가 없기 때문에 Inductive Load Application 적용시에는 별도의 Free Wheeling Diode가 필요하다. 그래서, 본 논문에서 별도의 Anti-Parallel Diode의 추가 없이도 Inductive Load Application에 적용 가능한 RC IGBT를 적용하여 600V/15A급 Three Phase Inverter Module을 제안 하고자 한다.

• Journal of Power Electronics
• /
• 제19권2호
• /
• pp.591-601
• /
• 2019

With the development of renewable energy, grid-connected inverter technology has become an important research area. When compared with traditional silicon IGBT power devices, the silicon carbide (SiC) MOSFET shows obvious advantages in terms of its high-power density, low power loss and high-efficiency power supply system. It is suggested that this technology is highly suitable for three-phase AC motors, renewable energy vehicles, aerospace and military power supplies, etc. This paper focuses on the SiC MOSFET behaviors that concern the parasitic component influence throughout the whole working process, which is based on a three-phase grid-connected inverter. A high-speed model of power switch devices is built and theoretically analyzed. Then the power loss is determined through experimental validation.