• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2535-2541
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• 2009

Prebiotic isomaltooligosaccharide preparations contain $\alpha$-D-glucooligosaccharides comprising isomaltooligosaccharides (IMOs) and non-prebiotic maltooligosaccharides (MOs). They are both glucose oligosaccharides characterized by their degree of polymerization (DP) value (from 2 to $\sim$10), linkages types and positions (IMOs: $\alpha$-(1$\rightarrow$2, 3, 6 and in a lower proportion internal 1$\rightarrow$4) linkages, MOs: α-(1$\rightarrow$4) linkages). Their structure is the key factor for their prebiotic potential. In order to determine and elucidate the exact structure of unknown IMOs and MOs, unambiguous assignments of $^{13}C$ and $^1H$ chemical shifts of commercial standards, representative of IMOs and MOs diversity, have been determined using optimized standard one and two-dimensional experiments such as $^1H$ NMR, $^{13}C$ NMR, APT and ${^1}H-{^1}H$ COSY, TOCSY, NOESY and <$^1H-{^{13}}C$ heteronuclear HSQC, HSQC-TOCSY, and HMBC. Here we point out the differential effect of substitution by a glucose residue at different positions on chemical shifts of anomeric as well as ring carbons together with the effect of the reducing end configuration for low DP oligosaccharides and diasteroisotopic effect for H-6 protons. From this study, structural $^{13}C$ specific spectral features can be identified as tools for structural analysis of isomaltooligosaccharides.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.189-192
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• 1991

This paper presents a modular structure design of analog Hopfield neural network. Each multiplier consists of four MOS transistors which are connected to an op-amp at the front end of a neuron. A pair of MOS transistor is used in order to maintain linear operation of the synapse and can produce positive or negative synaptic weight. This architecture can be expandable to any size neural network by forming tree structure. By altering the connections, other nework paradigms can also be implemented using this basic modules. The stength of this approach is the expandability and the general applicability. The layout design of a four-neuron fully connected feedback neural network is presented and is simulated using SPICE. The network shows correct retrival of distorted patterns.

• Proceedings of the IEEK Conference
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• 2000.11c
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• pp.149-152
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• 2000

We propose simple analog MOS circuits producing the one-dimensional compact motion-sensing circuits. In the proposed circuit, the optical flow is computed by a number of local motion sensors which are based on biological motion detectors. Mimicking the structure of biological motion detectors made the circuit structure quite simple, compared with conventional velocity sensing circuits. Extensive simulation results by a simulation program of integrated circuit emphasis (SPICE) indicated that the proposed circuits could compute local velocities of a moving light spot and showed direction selectivity for the moving spot

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.735-736
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• 1998

Reduction of hot carrier degradation in MOS devices has been one of the most serious concerns for MOS-ULSIs. In this paper, three types of LDD structure for suppression of hot carrier degradation, such as spacer-induced degradation and decrease of performance due to increase of series resistance will be investigated. LDD-nMOSFETs used in this study had three different drain structure. (1) conventional ${\underline{S}}urface$ type ${\underline{L}}DD$(SL), (2) ${\underline{B}}uried$ type ${\underline{L}}DD$(BL), (3) ${\underline{S}}urface$urface ${\underline{I}}mplantation$ type LDD(SI). As a result, the surface implantation type LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structure.

• The Journal of the Acoustical Society of Korea
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• v.22 no.7
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• pp.612-621
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• 2003

As the use of MP3 audio compression increased, the demand for the insertion of additive data about copyright or information on music contents has been groved and the related research has been progressed actively. When an additive data is inserted into MP3 bitstream, it should not to happen any distortion of music quality or the change of file size, due to the modification of MP3 bitstream structure. In our study, to make these conditions satisfied, we inserted some additive data to bitstream by modifying some bits of linbits among the quantized integer coefficients having big values. At this time, we consider the characteristics of linbits and their distributions. As a result of subjective sound quality test through MOS test, we confirmed that the quality of MOS 4.6 can be achieved at the data insertion rate of 60 bytes/sec. Using the proposed method, it is possible to effectively insert an additive data such as copyright information or information about media itself, so that various applications like audio database management can be realized.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.644-647
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• 2001

The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si- $SiO_2$) interface were investigated from the experimental data. The C-V characteristics are statical and convenient for the evaluation of the steady state behavior of carriers and interface states characteristics. While, the distribution and magnitude of space charges in oxide can be found out accurately on the $V_{dp}$ in D-V curves. The density of interface states can be deduced with ease from the magnitude of D-peak at depletion state. Thus, it is also concluded that the D-V curves are more useful and easier than conventional C-V curves for analysis of the microscopic and dynamic behavior of carriers in oxide and Si- $SiO_2$interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.8-9
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• 2006

Hafnium oxide ($HfO_2$) thin films were deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$. Prior to the deposition of $HfO_2$ films, a thin Hf ($10\;{\AA}$) metal layer was deposited. Deposition temperature of $HfO_2$ thin film was $350^{\circ}C$ and its thickness was $150\;{\AA}$. Samples were then annealed using furnace heating to temperature ranges from 500 to $900^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Thermally evaporated $3000\;{\AA}$-thick AI was used as top electrode. In this work, We study the interface characterization of $HfO_2$/Hf/Si MOS capacitor depending on annealing temperature. Through AES(Auger Electron Spectroscopy), capacitance-voltage (C-V) and current-voltage (I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf meta1 layer in our structure effective1y suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.2
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• pp.68.1-68.1
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• 2021

We study galaxy evolution with the large-scale environment with confirmed galaxy clusters from multi-object spectroscopy (MOS) observation. The observation was performed with Inamori Magellan Areal Camera and Spectrograph (IMACS) mounted on the 6.5 m Magellan/Baade telescope in Las Campanas Observatory. With the MOS observation, we spectroscopically confirm 34 galaxy clusters, including three galaxy clusters discovered in Kim et al. (2016) and 11 of them have halo mass of > 10^14.5 M_◉. Among the confirmed clusters, 12 galaxy clusters are part of large-scale structure at z ~ 0.9, and their size stretches to 40 Mpc co-moving scale. In this study, we checked the 'web feeding model,' which postulates that more linked (with their environment) galaxy clusters have less quenched populations by investigating the correlation between properties of confirmed galaxy clusters and the large-scale structure environment. Lastly, we found that galaxy clusters that make up the large-scale structure have larger and widely spread values of total star formation density (ΣSFR/M_halo) than typical clusters at similar redshifts.