• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.9
• /
• pp.49-53
• /
• 2016

A new large-signal model including the voltage-dependent extrinsic gate capacitance for RF channel distribution effect is developed for a high resistivity(HR) silicon-on-insulator(SOI) RF accumulation-mode MOS varactor. The data of voltage-dependent parameters are extracted by using accurate S-parameter optimization, and empirical model equations are constructed by data fitting process. The RF accuracy of this new model is validated by observing excellent agreements between modeled and measured Y11-parameter data in the wide voltage range up to 20 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.6 s.336
• /
• pp.59-66
• /
• 2005

CMOS LC VCO for tri-bind wireless LAN applications was designed in 1.8V 0.18$\mu$m CMOS process. PMOS transistors were chosen for VCO core to reduce flicker noise. The possible operation was verified for 5.8GHz band (5.725$\~$5.825GHz), 5.2GHz band (5.150$\~$5.325GHz), and 2.4GHz band (2.412$\~$2.484GHz) using the switchable L-C resonators. To linearize its frequency-voltage gain (Kvco), optimized multiple MOS varactor biasing technique was used for capacitance linearization and PLL stability improvement. VCO core consumed 2mA current and $570{\mu}m{\times}600{\mu}m$ die area. The phase noise was lower than -110dBc/Hz at 1MHz offset for tri-band frequencies.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2002.11a
• /
• pp.21-24
• /
• 2002

This paper presents a fully integrated, wide tuning range differential CMOS voltage-controlled oscillator, tuned by pMOS-varactors. VCO utilizing a novel tuning scheme is reported. Both coarse digital tuning and fine analog tuning are achieved using pMOS-varactors. The VCO were implemented in a 0.18-fm standard CMOS process. The VCO tuned from 1.8㎓ to 2.55㎓ through 2-bit digital and analog input. At 1.8V power supply voltage and a total power dissipation of 8mW, the VCO features a phase noise of -126㏈c/㎐ at 3㎒ frequency offset.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2003.11a
• /
• pp.234-238
• /
• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a $0.25-{\mu}m$ standard CMOS Process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier, Total power dissipation is 7.5 mW.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.44 no.1
• /
• pp.69-78
• /
• 2007

A Frequency synthesizer for T-DMB and mobile-DTV applications was designed using $0.18{\mu}m$ CMOS process with 1.8V supply. PMOS transistors were chosen for VCO core to reduce phase noise. The VCO range is 920MHz-2100MHz using switchable inductors, capacitors and varactors. Varactor biases that improve varactor acitance characteristics were minimized as two, and $K_{VCO}$(VCO gain) value was aintained by switchable varactor. Additionally, VCO was designed that VCO gain and the interval of VCO gain were maintained using VCO gain compensation logic. VCO, PFD, CP and LF were verified by Cadence Spectre, and divider was simulated using Matlab Simulink, ModelSim and HSPICE. VCO consumes 10mW power, and is 56.3% tuning range. VCO phase noise is -127dBc/Hz at 1MHz offset for 1.58GHz output frequency. Total power consumption of the frequency synthesizer is 18mW, and lock time is about $140{\mu}s$.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.24 no.2
• /
• pp.139-145
• /
• 2024

This paper presents the design of a voltage controlled oscillator (VCO) which is one of the key building blocks in modern wireless communication systems with small VCO gain (K_vco) variation. To compensate conventional large K_vco variation, a series varactor bank has been added to the conventional LC-tank with parallel capacitor bank array. And also, in order to achieve excellent phase noise performance while maintaining wide tuning range, a mixed coarse/fine tuning scheme(series varactor array and parallel capacitor array) is chosen. The switched varactor array bank is controlled by the same digital code for switched capacitor array without additional digital circuits. For use at a low voltage of 1.2V, the proposed current reference circuit in this paper used a current reference circuit for safety with the common gate removed more safely. Implemented in a TSMC 0.13㎛ CMOS RF technology, the proposed VCO can be tuned from 4.4GH to 5.3GHz with the K_vco (VCO gain ) variation of less than 9.6%. While consuming 3.1mA from a 1.2V supply, the VCO has -120dBc/Hz phase noise at 1MHz offset from the carrier of the 5.3 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.5
• /
• pp.40-49
• /
• 2008

A Frequency synthesizer for mobile-DTV applications is implemented using $0.18{\mu}m$ CMOS process with 1.8V supply. PMOS transistors are chosen for VCO core to reduce phase noise. The measurement result of VCO frequency range is 800MHz-1.67GHz using switchable inductors, capacitors and varactors. We use varactor bias technique for the improvement of VCO gain linearity, and the number of varactor biasing are minimized as two. VCO gain deterioration is also improved by using the varactor switching technique. The VCO gain and interval of VCO gain are maintained as low and improved using the VCO frequency calibration block. The sigma-delta modulator for fractional divider is designed by the co-simualtion method for accuracy and efficiency improvement. The VCO, PFD, CP and LF are verified by Cadence Spectre, and the sigma-delta modulator is simulated using Matlab Simulink, ModelSim and HSPICE. The power consumption of the frequency synthesizer is 18mW, and the VCO has 52.1% tuning range according to the VCO maximum output frequency. The VCO phase noise is lower than -100dBc/Hz at 1MHz at 1MHz offset for 1GHz, 1.5GHz, and 2GHz output frequencies.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.983-984
• /
• 2006

Multi-band VCO with fast response adaptive frequency calibration (AFC) technique is designed in 1.8V $0.18{\mu}m$ CMOS process. The possible operation is verified for 5.8GHz band, 5.2GHz band, and 2.4GHz band using the switchable L-C resonators for 802.11a/b/g WLAN applications. To linearize its frequency-voltage gain, optimized multiple MOS varactor biasing technique is used. In order to operate in each band frequency range with reduced VCO gain, 4-bit digitally controlled switched-capacitor bank is used and a wide-range digital logic quadricorrelator is implemented for fast frequency detector.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.6 no.1
• /
• pp.7-12
• /
• 2011

This paper proposes a differential Colpitts-VCO circuit suitable for low phase noise oscillation at the sub-1V supply voltage. Oscillation with low phase noise at the sub-1V supply voltage is facilitated by employing inductors as the current sources of the proposed circuit. One of the two feedback capacitors of the single-ended Colpitts oscillator in the proposed circuit is replaced with the MOS varactor in order to further reduce the resonator loss. Post-layout simulation results using a $0.18{\mu}m$ RF CMOS technology show that the phase noises at the 1MHz offset frequency of the proposed circuit oscillating at the sub-1V supply voltages of 0.6 to 0.9 V are at least 7 dBc/Hz lower than those of the well-known cross-coupled differential VCO.

• The Journal of The Korea Institute of Intelligent Transport Systems
• /
• v.7 no.6
• /
• pp.63-69
• /
• 2008

Reconfigurable RF one-chip solutions have been researched with the objective of designing for smaller-sized and more economical RF transceiver and it can be applied to a vehicular wireless terminal. The proposed voltage-controlled oscillator satisfies the targeted frequency range ($4.2{\sim}5.4\;GHz$) and the frequency planning which correspond to the standards such as CDMA(IS-95), PCS, GSM850, EGSM, WCDMA, WLAN, Bluetooth, WiBro, S-DMB, DSRC, GPS, and DVB-H/DMB-H/L(L Band). In order to improve phase noise performance, PMOS is adopted in the cross-coupled pair, the tail current source and MOS varactor in this VCO and differential-typed switching is proposed in capacitor array. Based on the measurement results, a total power dissipation is $5.3{\sim}6.0\;mW$ at 1.8 V power supply voltage. The oscillator is tuned from 4.05 to 5.62 GHz; The tuning range is 33%. The phase noise is -117.16 dBc/Hz at 1 MHz offset frequency and the FOM (Figure Of Merit) is $-180.84{\sim}-180.5$.