• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.9 no.3
• /
• pp.647-653
• /
• 2005

According to the design concept of microwave front-end, a low noise amplifier block using HBT cascode topology is proposed to provide high gain and low noise figure with low bias current. We has implemented MMIC-LNA with a modified configuration using inductors to show low noise at the emitter and base of cascoded HBT-MMIC amplifier. The measured performance of the designed MMIC-LNA at 3.7GHz are a gain of 19dB, noise figure of 2.7dB and image rejection of 35dBc using a supply of 3mA and 2.7V. We can convinced that cascoded amplifier block to fulfill a high gain, low noise and image rejection if microwave front-end receiver is designed by cascode MMEC-LNA with the active image rejection filter.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.17 no.2
• /
• pp.233-237
• /
• 2017

The dual-channel receiver MMIC which is composed of LNA, Mixer, LO-amp and temperature compensation circuit is designed on a single chip. For the performance comparison, a FMCW radar transceiver module using commercial MMICs is also implemented. As a result, Multi-channel Transceiver using manufactured MMIC shows an improved performance such as noise figure and gain flatness compare to purchased MMIC.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.8 no.2
• /
• pp.227-231
• /
• 2004

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the schottky diode of InGaAs/CaAs p-HEMT process has been developed for receiver down converter of Ka-band. A different approach of MMIC mixer structure is applied for reducing the chip size by the exchange of ports between IF and LO. This MMIC covers with RF (30.6∼31.0㎓)and IF (20.8∼21.2㎓). According to the on-wafer measurement, the MMIC mixer with miniature size of 3.0mm1.5mm demonstrates conversion loss below 7.8㏈, LO-to-RF isolation above 27㏈, LO-to-IF isolation above 19㏈ and RF-to-IF isolation above 39㏈, respectively.

• Electronics and Telecommunications Trends
• /
• v.26 no.4
• /
• pp.105-114
• /
• 2011

이동통신 및 위성통신 분야에 있어서 무선통신기술은 무선환경에서 신호를 보내고 받는 기능을 수행하는 중요한 분야이다. 이러한 무선통신 분야에서 송수신단을 구성하는 송수신 부품은 RF 시스템의 성능을 좌우한다. 특히, 위성통신 분야에서 신뢰성을 획득하기 위해서는 고집적화와 소형화를 통한 경쟁력 확보가 필수적인데 이를 위한 기술이 MMIC이다. MMIC 기술이란 반도체 공정을 이용하여 RF 부품을 설계하고 제작하는 기술로써 본 고에서는 MMIC 기술 소개와 이동통신 및 위성분야에서의 MMIC 기술 동향과 개발 현황, 앞으로의 전망을 개괄적으로 서술하고자 한다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.28 no.1
• /
• pp.1-9
• /
• 2017

In this paper, ETRI's $0.25{\mu}m$ GaN MMIC process is introduced and the fabricated results of X-Band 3 W power amplifier MMIC are discussed. The one-stage X-Band 3 W power amplifier MMIC using the $0.25{\mu}m$ GaN MMIC devices has been designed and fabricated. From the fabricated GaN MMIC, the characteristics of the $0.25{\mu}m$ GaN MMIC process and devices are evaluated and analyzed. The X-band power amplifier MMIC shows output power of 3.5 W, gain of 10 dB, and power-added efficiency of 35 %.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.21 no.3
• /
• pp.29-34
• /
• 2021

For the purpose of Application to the small radar sensor, the MMIC Chips, which are the core component of the W-band, was designed in Korea according to the characteristics of the transceiver and manufactured by 60nm GaN and 0.1㎛ GaAs pHEMT process. The output power of PA is 28 dBm at center frequency of W-band and Noise figure is 6.7 dB of switch and LNA MMIC. Output power and Noise figure of MMIC chips developed in domestic was applied to the transmitter and receiver module through W-band waveguide low loss transition structure design and impedance matching to verify the performance after the fabrication are 26.1~27.7 dBm and 7.85~10.57 dB including thermal testing, and which are close to the analysis result. As a result, these are judged that the PA and Switch and LNA MMICs can be applied to the small radar sensor.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.5
• /
• pp.1-10
• /
• 1999

A low power concumption 2.4 GHz one-chip transceiver MMIC was designed and fabricated using $1.0\mu\textrm{m}$ ion-implantation MESFET process and packaged on a 24 lead SSOP. In the transmitter mode, it revealed conversion gain of 7.5 dB, output IP3 of -3.5 dBm, and noise figure of 3.9 dB at 2.44 GHz with 3.9 mA current consumption. In the receiver mode, it revealed voltage sensitivity of 6.5 mV/$\mu\$W with 2 .0 mA current consumption. Comparing the fabricated MMIC with the results of MMICs reported elsewhere, it was shown that the fabricated MMIC had good performance. The low power consumption 2.4 GHz transceiver MMIC is expected to be used for various applications such as wireless local area networks, wireless local loops and RFID tags in ISM-band.

• Proceedings of the IEEK Conference
• /
• 2002.06a
• /
• pp.167-170
• /
• 2002

The design and fabrication of Q-band 3-stage monolithic microwave integrated circuit(MMIC) driver and power amplifiers for WLAN are presented using 0.2${\mu}{\textrm}{m}$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor(PHEMT). In each stage of the MMIC DA, a negative feedback is used for both broadband and good stability. The MMIC PA has employed a balanced configuration to overcome these difficulties and achieve high power with low VSWR over a wide frequency range. In the MMIC DA, the measurement results arc achieved as an input return loss under -4dB, an output return loss under -l0dB, a gain of 14dB, and a PldB of 17dB at C-band(36~ 44GHz). The chip size is 28mm$\times$1.3mm. The developed MMIC PA has the l0dB linear gain over 360Hz to 420Hz band and 22dBm PldB performance at 400Hz. The size of fabricated MMIC PA is 4mm x3mm. These results closely match with design results. This MMIC DA Sl PA will be used as the unit cells to develop millimeter-wave transmitters for use in wideband wireless LAN systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.13 no.8
• /
• pp.783-789
• /
• 2002

In this paper, V-band MMIC coupled oscillator arrays are presented. In the proposed array, two push-pull patch antennas are synchronized by using strong electromagnetic coupling between two antennas. As a result, total size of the array is reduced and the array can be integrated in a single chip. To verify proposed array concept, two 1$\times$2 arrays are designed and fabricated using standard 0.15 um gate length pHEMT MMIC process. The circuits are mounted in an oversized waveguide and measured. The first array shows 0.5 dBm at 56.372 GHz and the second one has an output of 5.85 dBm at 60.147 GHz.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.19 no.6
• /
• pp.175-181
• /
• 2019

For the purpose of Application to the small radar sensor, the MMIC Chip, which is the core component of the W-band, was designed in Korea according to the characteristics of the transceiver and manufactured by 0.1㎛ GaAs pHEMT process, and compared with the MMIC chip purchased overseas. The noise figure of low noise amplifier, insertion loss of the switch and image rejection performance of the down-converted mixer MMIC chip showed better characteristics than those of commercial chips. The MMIC chip developed in domestic was applied to the transmitter and receiver through W-band waveguide low loss transition structure design and impedance matching to verify the performance after the fabrication is 9.17 dB, which is close to the analysis result. As a result, it is judged that the transceiver can be applied to the small radar sensor better than the MMIC chip purchased overseas.