• The Journal of Korean Institute of Communications and Information Sciences
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• v.15 no.7
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• pp.574-580
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• 1990

Recently End-User Computing(EUC) is emerging as an alternative to the traditional information systems development approach which cannot cope with users' requirements of systems development because of increase in backlog. It is necessary that appropriate models of EUC to evaluate the expected benefits and risks and to implement should be developed for managers. The main objective of this study is to help managers who need to review their MIS policies by presentinb EUC strategies under the information systems research framework which have concluded through many studies.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

• Journal of the Korean Geographical Society
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• v.49 no.1
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• pp.1-17
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• 2014

This study estimates geomorphological processes of fluvial terraces by uplifts and bedrock features, by the analyses of topography, distribution, formation age and incision rate of fluvial terraces using Gwang-cheon River in Uljin, Namdae-cheon River in Pyeonghae and Osip-cheon River in Yeongdeok located in the southern Taebaek Mountain Range. The tectonic and climatic terraces I in the upper reaches of Gwang-cheon River with an altitude from riverbed of 9~12m indicate the formation age of MIS 2 with a incision rate of 0.40m/ka. However, the tectonic and climatic terraces I in the upper reaches of Osip-cheon River with an altitude from riverbed of 7~10m show the formation age of MIS 3 with an incision rate of 0.10m/ka. These results suggest that the uplift rate in the Gwang-cheon River basin is likely to be higher than that in the Osip-cheon River basin. Unlike the lower reaches of Osip-cheon River, the thalassostatic terraces are not found in the lower reaches of Gwang-cheon River, because the basin has low maintainable ability of landforms in river valley due to high uplift rate and bedrock properties resistant to weathering and erosion. On the other hand, the lowest tectonic and climatic terraces in the study areas indicate different formative ages and the terraces during the cooling stage in interglacial as well as during interstadial are also found. Therefore, this study suggests that chronological method for fluvial terrace by the previous developmental model of climatic terrace should be reconsidered.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.7
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• pp.46-55
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• 1999

We proposed the new method of postprocessing which not only reduces the frequency of dictionary access using morphological analysis but improve the recognition rate of character recognizer. In this paper, after estimating morphological construction of mis-recognized word using the part of speech that is analyzed, correct presumed mis-recognized morphology. The postprocessing using a morphology unit reduce candidate because of short than word and frequency of dictionary access because there is no need to morphological analysis for candidate. To select right candidate is only necessary to dictionary access. The proposed results show that reduced the frequency of dictionary access to 60% than postprocessing method using a word unit and recognition rate improved from 94% to 97%.

• Asia pacific journal of information systems
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• v.7 no.2
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• pp.185-198
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• 1997

Recently the formation of the project team to construct a MIS system is generalized and the relationship of the user and the system personnel in the project team should be important factor in the effectiveness of the team. However, the systematic research about the personality typology of the user and the system personnel is scarcely verified. Considering this necessity, this study is, using the IS personality typology, tried to find the relationship of the user and the system personnel in the project team. One of Jung(1924)'s personality typology is introvert and extrovert, however, this typology is founa to have many facets related with personality category. Recently Ackoff(1996) has tried this category more meaningful, which are subjective-internalizer, subjective-externalizer objective-internalizer one objective-externalizer. Moreover, he has proposed the methodology which could find the assimilarity among the team members. On the basis of this typology, this research is attempted to find the difference of the characteristics of the user and the system personnel. Through this research, we can understand the difference of the characteristics of the user and the system personnel and this understanding can make help us operating the team more effectively. The result has suggested that the effectiveness of the team has relied on the personality type of the user and the system personnel. Especially the personality type of new member who will join into team is an important factor in the effectiveness of teaming. Therefore, when we have a new member into team, we have to consider the personality type of new member. Moreover, the personality type of the management is an another critical factor which should be considered.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• Journal of Korean Medical Science
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• v.33 no.52
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• pp.339.1-339.11
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• 2018

Background: Hip pain is a common musculoskeletal complaint in general practice. Although comprehensive diagnostic approach on hip pain is mandatory for adequate treatment, un- or mis-diagnosis is not rare in primary care. The aim of this study was to analyze descriptively un- or mis-diagnosed hip pain cases referred from primary care to a tertiary hospital, especially in young adults ${\leq}50years\;old$. Methods: We retrospectively analyzed a consecutive cohort of 150 patients (${\leq}50years\;old$) with chronic hip pain (${\geq}6weeks$), which was not diagnosed or misdiagnosed based on the information provided on the referral form. Results: Overall an average 32 cases/month were referred due to hip pain without a diagnosis or with an incorrect diagnosis. Among them, 150 patients were enrolled in this study and 146 (97.3%) could be allocated to a specific disease by using data from routine clinical practice. Four common final diagnoses were femoroacetabular impingement (FAI) syndrome (55.3%), hip dysplasia (HD, 13.3%), referred pain from the lumbar spine (9.3%), and spondyloarthritis (SpA, 7.3%). In patients with FAI syndrome, 37 (44.0%) had pincer-type FAI and 33 (39.8%) had combined-type. Although the pain site or gender was not tightly clustered, the distribution of final diagnosis was significantly different according to hip pain location or gender. Especially, SpA or HD was not observed in younger women subgroup or elder men subgroup, respectively, when stratified by the mean age of participants. Conclusion: Most (> 80%) young patients with hip pain, a difficult issue to diagnosis for many primary physicians, had FAI syndrome, HD, spine lesions, and SpA. This study could give a chance to feedback information about cases with un- or mis-diagnosed hip pain, and it suggests that primary physicians need to be familiar with the diagnostic approach for these 4 diseases.

• The Korean Journal of Quaternary Research
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• v.18 no.1 s.22
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• pp.21-30
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• 2004

The Ilgwang Fault is NNE-striking, elongated 40 Km between Ulsan and Haeundae-ku, Busan in southeastern part of the Korean Peninsula. This paper si mainly concerned about the ages of the fault activities especially in the Quaternary, inferred from classification of geomorphic surfaces and trench excavation for the construction of Singori nuclear power plant. The geomorphic surfaces are classified into Beach and the Alluvial plain, the 10 m a.s.l. Marine terrace(MIS 5a), the 20 m a.s.l. Marine terrace(MIS 5e), the Reworked surface of 45 m a.s.l. Marine terrace(MIS 7 or 9) and the Low relief erosional surface. The Low relief erosional surface is distributed coastal side, the Reworked surface of 45m a.s.l. Marine terrace inland side by the Ilgwang Fault Line as the boundary line. But the former is above 10 m higher in relative height than the latter. The 20 m a.s.l. Marine terrace on the elongation line of the Ilgwang Fault reveals no dislocation. A site was trenched on the straight contact line with $N30^{\circ}E$-striking between the 10 m a.s.l. Marine terrace and the 20 m a.s.l. Marine terrace. Fault line or dislocation was not observable in the trench excavation. Accordingly, the straight contact line is inferred as the ancient shore line of the 10 m a.s.l. Marine terrace. The Ages of the Fault activities are inferred after the formation of the Ichonri formation - before the formation of the 45 m a.s.l. Marine terrace(220 Ka. y. B.P. or 320. Ka. y. B.P.). The Low relief erosional surface was an island above the sea-level during the formation of the 45 m a.s.l. marine terrace in the paleogeography.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.77-78
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• 2006

최근 flexible OLED의 구동에 사용하기 위한 유기박막트랜지스터(Organic Thin Film Transistor, OTFT)의 연구에서는 용매에 용해되어 spin coating이 가능한 재료의 개발에 관심을 두고 있다. 현재 pentacene으로는 아직 spin coating으로 제작할 수 있는 상용화된 제품이 없고 spin coating이 가능한 활성층 물질(active material)로 P3HT가 쓰이고 있다. 본 연구에서는 용해 가능한 P3HT 활성층 물질과 여러 종류의 용해 가능한 게이트 절연물(gate insulator, Gl)을 사용하여 안정된 소자를 구현할 수 있는 공정을 개발하는 목적으로 metal-insulator-semironductor(MIS) 소자를 제작하여 C-V 특성을 측정하고 분석하였다. 먼저 7mm${\times}$7mm 크기의 pyrex glass 시편 위에 바닥 전극으로 $1600{\AA}$ Au을 증착하고 spin coating 방식을 이용하여 PVP, PVA, PVK, BCB, Pl의 5종류의 게이트 절연층을 각각 형성하였고 그 위에 같은 방법으로 P3HT를 코팅하였다. P3HT 코팅 시 bake 공정의 유무와 spin rpm의 변화에 따른 P3HT의 두께를 측정하였다. Gl의 종류별로 주파수에 따른 capatltancc를 측정하여 비교, 분석하였다. C-V 측정 결과 PVP, PVA, PVK, BCB, Pl의 단위 면적당 capacitance 값은 각각 1.06, 2.73, 2.94, 3.43, $2.78nF/cm^2$로 측정되었다. Threshold voltage, $V_{th}$는 각각 -0.4, -0.7, -1.6, -0.1, -0.2V를 나타냈다. 주파수에 따른 capacitance 변화율을 측정한 결과 Gl 물질 모두 주파수가 높을수록 capacitance가 점점 감소하는 경향을 보였으나 1${\sim}$2nF 이내의 범위에서 작은 변화율만 나타냈다. P3HT의 두께와 bake 온도를 변화시켜 C-V 값을 측정한 결과 차이는 없었다. FE-SEM으로 관찰한 결과에서도 두께나 온도에 따른 P3HT의 표면 morphology 차이를 확인할 수 없었다. 본 연구에서 PVK와 P3HT의 조합이 수율(yield)면에서 가장 안정적이면서 $3.43\;nF/cm^2$의 가장 높은 capacitance 값을 나타내고 $V_{th}$ 값 또한 -1.6V로 가장 낮은 값을 보였다.