• Journal of Korean Neurosurgical Society
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• v.62 no.4
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• pp.467-475
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• 2019

Objective : There is a lack of knowledge regarding whether decompression is necessary in treating patients with epidural spinal cord compression (ESCC) grade 2. The purpose of this study was to compare the outcomes of minimally invasive surgery (MIS) without decompression and conventional open surgery (palliative laminectomy) for patients with hepatocellular carcinoma (HCC) spinal metastasis of ESCC grade 2. Methods : Patients with HCC spinal metastasis requiring surgery were retrospectively reviewed. Patients with ESCC grade 2, medically intractable mechanical back pain, a Nurick grade better than 3, 3-6 months of life expectancy, Tomita score ${\geq}5$, and Spinal Instability Neoplastic Score ${\geq}7$ were included. Patients with neurological deficits, other systemic illnesses and less than 1 month of life expectancy were excluded. Thirty patients were included in the study, including 17 in the open surgery group (until 2008) and 13 in the MIS group (since 2009). Results : The MIS group had a significantly shorter operative time ($94.2{\pm}48.2minutes$ vs. $162.9{\pm}52.3minutes$, p=0.001), less blood loss ($140.0{\pm}182.9mL$ vs. $1534.4{\pm}1484.2mL$, p=0.002), and less post-operative intensive care unit transfer (one patient vs. eight patients, p=0.042) than the open surgery group. The visual analogue scale for back pain at 3 months post-operation was significantly improved in the MIS group than in the open surgery group ($3.0{\pm}1.2$ vs. $4.3{\pm}1.2$, p=0.042). The MIS group had longer ambulation time ($183{\pm}33days$ vs. $166{\pm}36days$) and survival time ($216{\pm}38days$ vs. $204{\pm}43days$) than the open surgery group without significant difference (p=0.814 and 0.959, respectively). Conclusion : MIS without decompression would be a good choice for patients with HCC spinal metastasis of ESCC grade 2, especially those with limited prognosis, mechanical instability and no neurologic deficit.

• Journal of the Korean GEO-environmental Society
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• v.9 no.5
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• pp.37-43
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• 2008

Inorganic injection material, which is one of the ground improvement materials, consists of cement accelerator and inorganic micro particle. The inorganic injection material is known to overcome the major limitations of water glass type improvement materials, which are leaching and accompanying strength loss. The inorganic injection material is superior in durability and strength, and environmentally friendly since leaching is prevented. In this study, the effectiveness and environment-friendliness of the MIS(Micro Injection-process System) using the inorganic injection material is compared to SGR, which uses the water glass. The performed tests were unconfined compression test, chemical resistance test, and fish poison test. The unconfined compression tests showed that the MIS results in 1.7 times higher 28 day strength compared to the SGR. In addition, the strength continually increased with time for the MIS, while it decreased for the SGR. The chemical resistance tests indicated that the rate of change in length using the MIS is 10~25 times smaller than when using the SGR. The fish poison test proved that MIS was more environmentally friendly. The analysis of chemical ingredients of leached showed that the amount of $Cr^{6+}$, Pb and Si leached from the MIS is less compared to the SGR. Accordingly, the MIS grout is more high-strength than existing SGR grout. It is excellent in shortening of construction period, structural stability of foundation and environmentally friendly. So, it is considered that it has not little the problem about groundwater pollution.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.52-57
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• 1984

The electrical properties and their instability of InP tunnel MIS diodes fabricated by inserting the chemically grown oxide between metal and n-lnP (100) surface have been in-vestigated. The structure of the gown oxide was the mixture of In2O3 and P2O5, as was other low-temperature grown oxide, and its thickness was estimated to be the order of 200 $A^{\circ}$. The forward and reverse currents increased even with slight heat treatment of diodes in vacuum, and they were reduced when the diodes were exposed to humid ambient. It was discussed that the observed instability in I-V characteristics is due to a change of the physicochemical properties of the oxide film and of the interface states between oxide and InP according to the absorption of H2O.

• Proceedings of the KSEEG Conference
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• 2003.04a
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• pp.131-134
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• 2003

계기지진기록에 의하면, 한반도에서는 중국이나 일본만큼 지진발생빈도가 높거나 강진은 없으나, 북한에서는 추가령단층대 이서지역, 남한에서는 아산만～영일만 일원을 따라 대상으로 분포한다. 역사지진기록에 의하면, 경주시 주변에서 8개의 큰 지진이 일어났으며, 이중 779년에 일어난 경주지진에서는 백명 이상의 사상자가 발생한 기록이 있다고 하였다(경재복, 1997). (중략)

• Journal of the Korean Geographical Society
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• v.41 no.3 s.114
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• pp.346-360
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• 2006

In order to analyze synthetically geomorphological processes of marine terrace in Korea, this study deals with the distribution of marine terraces, stratification of sedimentary layers, physicochemical properties of deposits, and formative ages of marine terraces based on OSL(Optically Stimulated Luminescence) absolute age at coastal area of Gwangyang Bay in central part of the South Coast. As a result of comparison with physicochemical properties on diverse geomorphic materials, there is not enough distinction in them, because of recycling and mixing of materials at Gwangyang Bay having a geomorphic closure. In Gwangyang bay coast, marine terraces are discovered at least 3 levels and have a small area. Formative age of 1st Terrace, as the lowest level ranging in $10{\sim}13m$ above the sea level, is estimated at MIS(Marine Isotope Oxygen Stage) 5a, based on OSL age dating and properties of deposits. Uplifting rate is calculated at 0.141m/ka in Gwangyang bay coast. For application to this rate, 2nd terrace($18{\sim}22m$) is estimated at MIS 5e, 3rd terrace($27{\sim}32m$) is latter part of MIS 7. Consequently, we might conclude that uplifting and geomorphic process of marine terrace in South Coast is similar to East Coast during the Late Pleistocene in Korea.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.29-32
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• 1999

$GaF_3$ films were directly grown on p' and p-type GaAs(100) substrates using a $SF_6$ plasma discharge system. GaAs MIS(Meta1-Insulator-Semiconductor) capacitor was successfully fabricated for about 1 hour at temperature $290^{\circ}C$ using the as-grown $GaF_3$ films. The as-grown films on p'-GaAs exhibited a current density of less than 6.68 $\times$ $1O^{-9}$ A/$cm^2$ at a breakdown field of 500kV/cm and a refractive index of 2.0 ~ 2.3 at a wavelength of 632.8 nm. The dielectric constant was about 5 derived from 1 MHz capacitance-voltage (C-V) measurements. Dielectric dispersion of the fluoridated films on p'-GaAs measured ranged from 100 Hz to 10 MHz was not observed.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.85-87
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• 1990

Silicon nitride film was deposited on a silicon wafer using a laser CVD(LCVD) technique, which is based on direct photolysis of $SiH_4/NH_3$ gas mixture by ArF laser beam(${\lambda}=193\;nm$). The refractive index of deposited SiN film is 1.9 at the temperature of $300^{\circ}C$, pressure of 5 torr. The breakdown field strength of LCVD SiN film was 10MV/cm. In IR spectrum, the absorption peak of Si-H, N-H, and Si-N is detected and it is shown that hydrogen is included in SiN film. From analysis of absorption band. it is calculated that density of Si-H, N-H bond is higher than $5{\times}10^{22}cm^{-3}$. LCVD MIS capacitor and PECVD MIS capacitor have injection-type hysteresis but it is known that hysteresis loss of LCVD MIS capacitor is smaller than that of PECVD MIS capacitor. It means that Interface state density of LCVD capacitor is smaller than that of PECVD capacitor. In addition, the flatband voltage($V_{FB}$) of LCVD is smaller than that of PECVD capacitor. And it means that fixed charged density($Q_{FIX}$) of LCVD capacitor is smaller than that of PECVD MIS capacitor.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.107-112
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• 2005

We present an AlGaN/GaN metal-insulator-semiconductor-heterostructure field effect transistor (MIS-HFET) with an $Al_2O_3-HfO_2$ laminated high-k dielectric, deposited by plasma enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited $Al_2O_3-HfO_2$ laminated layer was estimated to be as high as 15. The fabricated MIS-HFET with a gate length of 102 m exhibited a maximum drain current of 500 mA/mm and maximum tr-ansconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the $Al_2O_3-HfO_2$ laminated dielectric effectively passivated the surface of the device.

• Journal of the Korean Society of Marine Environment & Safety
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• v.19 no.5
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• pp.483-490
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• 2013

In this study, we analyzed AIS measured data for ten days by selecting the four main ports with many ships arriving in the national ports. The peak time congestion of the main ports, calculated by survey research, was about 3.8-5.7 times higher than the hourly average congestion. This is very different from the results of the advanced research, evaluating the marine traffic congestion of the Ulsan main port based on the existing Port-MIS statistical data, which showed a peak time congestion of about 1.7 times higher than the hourly average. This identifies the problem of distorting the traffic characteristics of the current passage. Therefore, in order to evaluate marine traffic congestion, it would be more appropriate to calculate it based on survey research, rather than Port-MIS statistical data.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.327-332
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• 2011

Plasma polymerized styrene (ppS) thin films were prepared on ITO coated glass substrates for a MIM (metal-insulator-metal) structure with thermally evaporated Au thin film as metal contact. Also the ppS thin films were applied as organic insulator to a MIS (metal-insulatorsemiconductor) device with thermally evaporated pentacene thin film as organic semiconductor layer. After the I-V and C-V measurements with MIM and MIS structures, the ppS revealed relatively higher dielectric constant of k=3.7 than those of the conventional poly styrene and very low leakage current density of $1{\times}10^{-8}Acm^{-2}$ at electric field strength of $1MVcm^{-1}$. The MIS structure with the ppS dielectric layer showed negligible hysteresis in C-V characteristics. It would be therefore expected that the proposed ppS could be applied as a promising dielectric/insulator to organic thin film transistors, organic memory devices, and flexible organic electronic devices.