JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Device Characteristics of AlGaN/GaN MIS-HFET using $Al_2O_3$ Based High-k Dielectric

  • Published : 2005.06.30
Download PDF
⟨ Previous Next ⟩

Abstract

We present an AlGaN/GaN metal-insulator-semiconductor-heterostructure field effect transistor (MIS-HFET) with an $Al_2O_3-HfO_2$ laminated high-k dielectric, deposited by plasma enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited $Al_2O_3-HfO_2$ laminated layer was estimated to be as high as 15. The fabricated MIS-HFET with a gate length of 102 m exhibited a maximum drain current of 500 mA/mm and maximum tr-ansconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the $Al_2O_3-HfO_2$ laminated dielectric effectively passivated the surface of the device.

Keywords

References

  1. S.J. Pearton, F. Ren, A.P. Zhang, and K.P. Lee, Fabrication and performance of GaN electronic devices, Materials Science and Engineering, R30, pp.55-212, 2000 https://doi.org/10.1016/S0927-796X(00)00028-0
  2. M. A. Khan, M. S. Shur, Q. C. Chen, and J. N. Kuznia, Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias, Electron. Lett., vol. 30, p.2175-2176, Dec. 8, 1994 https://doi.org/10.1049/el:19941461
  3. M. Asif Khan, X. Hu, A. Tarakji, G. Sumin, J. Yang, R. Gaska, M. S. Shur, , AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors on SiC substrates, Applied Physics Lett. vol. 77 No. 9, pp.1339-1341, 2000 https://doi.org/10.1063/1.1290269
  4. M. Asif Khan, X. Hu, G. Sumin, A. Lunev, J.Yang, M. S. Shur, , AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor, IEEE Electron Device Lett. vol. 21 No. 2, pp.63-65, 2000 https://doi.org/10.1109/55.821668
  5. S. Ootomo, T. Hashizume, H. Hasegawa, A Novel Thin Al2O3 Gate Dielectric by ECR-Plasma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors, Phys. stat. Sol. (c), 0, 90, 2002 https://doi.org/10.1002/pssc.200390124
  6. J. Y. Lee, B. C. Lai, The electrical properties of high dielectric constant and ferroelectric thin films for very large scale integration circuits, Handbook of Thin Films Materials:Ferroelectric and dielectric thin films, Academic press, pp. 1- 98, 2002
  7. S. W. Choi, C. M. Jang, D. Y. Kim, J. S. Ha, H. S. Park, W. K. Y. Koh, C. S. Lee, Journal of the Korean Physical Society, Vol. 42, pp. S975-S979, February 2003
  8. D.H. Yoon, V. Kumar, J. H. Lee, R. Schwindt, W. J. Chang, J. Y. Hong, C. M. Jeon, S. B. Bae, M. R. Park, K. S. Lee, J. L Lee, I. Adesida, IEE Electronics Lett., vol. 39, pp. 566, 2003 https://doi.org/10.1049/el:20030337
  9. O. Katz, A. Horn, G. Bahir, J. Salzman, IEEE Trans. Electron Devices. vol. 50, No. 10, pp.2002, 2003 https://doi.org/10.1109/TED.2003.816103
  10. W. Liu: Fundamentals of III-V devices-HBTs, MESFETs, and HFETs/HEMTs (A Wiley-Interscience publication) Chap. 5, pp.337, 1999
  11. P. A. Ivanov, M. E. Levinshtein, G. Simin, X. Hu, J. Yang, M. A. Khan, S. L. Rumyantsev, M. S. Shur, R. Gaska, vol. 37, No. 24, pp.1479, 2001 https://doi.org/10.1049/el:20010982