• Journal of Sensor Science and Technology
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• v.27 no.4
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• pp.269-274
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• 2018

High-sensitivity signal-to-noise ratio (SNR) microphones are essentially required for a broad range of automatic speech recognition applications. Piezoelectric microphones have several advantages compared to conventional capacitor microphones including high stiffness and high SNR. In this study, we designed a new piezoelectric membrane structure by using the finite elements method (FEM) and an optimization technique to improve the sensitivity of the transducer, which has a high-quality AlN piezoelectric thin film. The simulation demonstrated that the sensitivity critically depends on the inner radius of the top electrode, the outer radius of the membrane, and the thickness of the piezoelectric film in the microphone. The optimized piezoelectric transducer structure showed a much higher sensitivity than that of the conventional piezoelectric transducer structure. This study provides a visible path to realize micro-scale high-sensitivity piezoelectric microphones that have a simple manufacturing process, wide range of frequency and low DC bias voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.284-288
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• 2016

Among the various physiological information that could be obtained from human body, heartbeat rate is a commonly used vital sign in the clinical milieu. Photoplethysography (PPG) sensor is incorporated into many wearable healthcare devices because of its advantages such as simplicity of hardware structure and low-cost. However, healthcare device employing PPG sensor has been issued in susceptibility of light and motion artifact. In this paper, to develop the real-time heart rate measurement device that is less sensitive to the external noises, we have fabricated an ultra-small wireless LC resonant pressure sensor by MEMS process. After performance evaluation in linearity and repeatability of the MEMS pressure sensor, heartbeat waveform and rate on radial artery were obtained by using resonant frequency-pressure conversion method. The measured data using the proposed heartbeat rate measurement system was validated by comparing it with the data of an commercialized heart rate measurement device. Result of the proposed device was agreed well to that of the commercialized device. The obtained real time heartbeat wave and rate were displayed on personal mobile system by bluetooth communication.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.26-31
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• 2001

This paper presents the electrochemical etch-stop characteristics of single-crystal Si(001) wafers in tetramethyl ammonium hydroxide(TMAH):isopropyl alcohol(IPA):pyrazine solutions. The addition of pyrazine to TMAH:IPA solutions increased the etch rate of (100) Si, thus the etching time required by the etch-stop process shortened. The current-voltage(I-V) characteristics of n- and p-type Si in TMAH:IPA:pyrazine solutions were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was used to fabricate 801 microdiaphragms of 20 ${\mu}{\textrm}{m}$ thickness on a 5-inch Si wafer. The average thickness of fabricated 801 microdiaphragms on one Si wafer was 20.03 ${\mu}{\textrm}{m}$ and the standard deviation was $\pm$0.26 ${\mu}{\textrm}{m}$. The Si surface of the etch-stopped microdiaphragm was extremely flat with no noticeable taper or nonuniformity.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.386-390
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• 2006

This paper describes the ohmic contact formation of polycrystalline 3C-SiC films deposited on thermally grown Si wafers. In this work, a TiW (titanium tungsten) film as a contact material was deposited by RF magnetron sputter and annealed with the vacuum process. The specific contact resistance (${\rho}_{c}$) of the TiW contact was measured by using the C-TLM (circular transmission line method). The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature as also analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscope). All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30 min., the lowest contact resistivity of $2.90{\times}10{\Omega}cm^{2}$ was obtained due to the improved interfacial adhesion. Therefore, the good ohmic contact of polycrystalline 3C-SiC films using the TiW film is very suitable for high-temperature MEMS applications.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2007.04a
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• pp.91-94
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• 2007

The fabrication and firing test of the ignition system for a micro solid propellant thruster are described in the present paper. Pt igniter coil was patterned on the glass membrane that was fabricated by the wet etching process. The thickness of Pt layer was $2000{\AA}$ and the width of igniter pattern was $40{\mu}m$. The thickness and diameter of glass membrane were $15{\mu}m$ and 1 mm, respectively. Ignition test was performed. Successful ignition of HTPB/AP propellant was obtained with an ignition delay of 1.6 s at an input voltage of 12 V. The ignition energy was estimated to be 1.4 J.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2501-2503
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PTO layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PTO layer of c-axial orientation raised thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PTO layer were measured, too.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1903-1905
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• 2003

전자기력을 이용하여 탐침형 정보저장장치의 미디어를 제어할 수 있는 초정밀 구동기를 제작하였다. 탐침형 정보저장장치는 데이터 비트의 크기가 10nm 수준이고, 단일 캔틸레버가 점유하는 영역의 크기가 수십 ${\mu}m$${\times}$수십${\mu}m$ 수준이므로, 미디인 구동기는 수 nm의 위치 정확도 및 수십 ${\mu}m$ 수준의 변위 그리고 100Hz이상의 공진 주파수를 확보하여야한다. 본 연구에서 제작한 탐침형 정보저장장치의 미디어 구동기는 고저항 Si wafer 표면을 Deep RIE로 patterning한 후 그 내부를 도금으로 채워 구리 코일을 형성하고 이를 영구자석과 결합시킨 후, 구리 코일에 전류를 흘려 미디어를 구동하는 방식이다. 사용된 영구자석은 SmCo 자석이며 코일의 폭은 $100{\mu}m$이고 간격은 $20{\mu}m$, 높이는 $70{\mu}m$로 결정하였으며, 100Hz 이상의 공진 주파수를 확보하기 위하여 스프링 재질은 구리보다 상대적으로 stiff한 Si을 사용하였다. 미디어의 크기는 $20{\times}20mm^2$, 전체 구동기의 크기는 $30{\times}30mm^2$이며 측정결과 최대변위는 140mA 인가 시 약 ${\pm}127{\mu}m$이다.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Journal of Satellite, Information and Communications
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• v.12 no.2
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• pp.11-14
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• 2017

In this paper, we introduce a method of light focusing effect using prism structure to solve optical discontinuity of conventional external signage LED panels. The prims structures were patterned on a transparent polycarbonate substrate with MEMS and femto-second laser process. We have confirmed that the patterned prism structures on the substrate made artificial LED lights on empty space between the panels by light guide effect of the structure. The artificial light's lateral positions were controlled by thickness of polycarbonate substrate. This cost effective prim patterned transparent film can be utilized on digital signage LED panels to achieve good optical communication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.340-341
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• 2005

Three different composition 130um thickness PZT were fabricated by extrusion method and burned out at $550^{\circ}C$ and sintered at $1260^{\circ}C$/2.5hrs. Actuator was fabricated using glass and Si(100) wafer by MEMS process. From XRD data, in case of DECH, perovskite phase peak strength is higher than others. We were able to obtain the information of grain growth and porosity by SEM images. Also DECH PZT on glass membrane(100um thickness) have larger displacement than others.