• 제목/요약/키워드: MEMS Fabrication Process

검색결과 189건 처리시간 0.024초

광중합에 의한 초고온 MEMS용 SiCN 미세구조물 제작과 그 특성 (Fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization and its characteristics)

  • 정귀상
    • 센서학회지
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    • 제15권2호
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    • pp.148-152
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    • 2006
  • This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work, polysilazane liquide as a precursor was deposited on Si wafers by spin coating, microstructured and solidificated by UV lithography, and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules, hardness and tensile strength of the SiC microstructure implemented under optimum process condtions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated mulitlayer or 3D microstructures as well as its good mechanical properties.

초고온 MEMS용 SiCN 미세구조물 제작과 그 특성 (Fabrication of SiCN Microstructures for Super-High Temperature MEMS and Its Characteristics)

  • 이규철;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.392-393
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    • 2006
  • This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work. polysilazane liquide as a precursor was deposited on Si wafers by spin coating. microstructured and solidificated by UV lithography. and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules. hardness and tensile strength of the SiC microstructure implemented under optimum process conditions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated multlayer or 3D microstructures as well as its good mechanical properties.

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미세바늘제작 및 배열을 이용한 반 능동형 가진 약물주입기구 설계 (Semi-active Vibration Drug Delivery Device Design using a Micro-needle Fabrication and Array)

  • 성연욱;박진호;이혜진
    • 융복합기술연구소 논문집
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    • 제1권1호
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    • pp.48-51
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    • 2011
  • Transdermal drug delivery device is a method of drug delivery through the skin. Skin has a very large area, so it is attractive route to drug delivery. When drug delivery through the skin, microneedle has a advantage that painless, constant drug deliver and penetration efficient; nevertheless the cost is expensive because fabrication process need a particular equipment and not suitable in mass production. This study shows microneedle fabrication process using convergence of general MEMS process and dicing process that can make 3-D sharp microneedle tip and this fabrication process suitable for mass production.

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Microelectromechnical system 소자 제작을 위한 유기금속분해법에 의한 압전성 PZT(53/47)박막의 증착 (Deposition of Piezoelectric PZT(53/47) Film by Metalorganic Decomposition for Micro electro mechanical Device)

  • 윤영수;정형진;신영화
    • 한국전기전자재료학회논문지
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    • 제11권6호
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    • pp.458-464
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    • 1998
  • This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

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UV 임프린팅 공정을 이용한 금속막 필터제작 (Fabrication of Metallic Nano-filter Using UV-Imprinting Process)

  • 노철용;이남석;임지석;김석민;강신일
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2005년도 춘계학술대회 논문집
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    • pp.237-240
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    • 2005
  • The demand of micro electrical mechanical system (MEMS) bio/chemical sensor is rapidly increasing. To prevent the contamination of sensing area, a filtration system is required in on-chip total analyzing MEMS bio/chemical sensor. A nano-filter was mainly applied in some application detecting submicron feature size bio/chemical products such as bacteria, fungi and so on. We suggested a simple nano-filter fabrication process based on replication process. The mother pattern was fabricated by holographic lithography and reactive ion etching process, and the replication process was carried out using polymer mold and UV-imprinting process. Finally the nano-filter is obtained after removing the replicated part of metal deposited replica. In this study, as a practical example of the suggested process, a nano-dot array was replicated to fabricate nano-filter fur bacteria sensor application.

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MEMS 공정을 이용한 32x32 실리콘 캔틸레버 어레이 제작 및 특성 평가 (Fabrication and Characterization of 32x32 Silicon Cantilever Array using MEMS Process)

  • 김영식;나기열;신윤수;박근형;김영석
    • 한국전기전자재료학회논문지
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    • 제19권10호
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    • pp.894-900
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    • 2006
  • This paper reports the fabrication and characterization of $32{\times}32$ thermal cantilever array for nano-scaled memory device applications. The $32{\times}32$ thermal cantilever array with integrated tip heater has been fabricated with micro-electro-mechanical systems(MEMS) technology on silicon on insulator(SOI) wafer using 9 photo masking steps. All of single-level cantilevers(1,024 bits) have a p-n junction diode in order to eliminate any electrical cross-talk between adjacent cantilevers. Nonlinear electrical characteristic of fabricated thermal cantilever shows its own thermal heating mechanism. In addition, n-channel high-voltage MOSFET device is integrated on a wafer for embedding driver circuitry.

MEMS 제작기술을 이용한 미세 힘센서 설계 및 제작 (Design and fabrication of micro force sensor using MEMS fabrication technology)

  • 김종호;조운기;박연규;강대임
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 춘계학술대회 논문집
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    • pp.497-502
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    • 2002
  • This paper describes a design methodology of a tri-axial silicon-based farce sensor with square membrane by using micromachining technology (MEMS). The sensor has a maximum farce range of 5 N and a minimum force range of 0.1N in the three-axis directions. A simple beam theory was adopted to design the shape of the micro-force sensor. Also the optimal positions of piezoresistors were determined by the strain distribution obtained from the commercial finite element analysis program, ANSYS. The Wheatstone bridge circuits were designed to consider the sensitivity of the force sensor and its temperature compensation. Finally the process for microfabrication was designed using micromachining technology.

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SOI(Silicon-On-Insulator)- Micromachining 기술을 이용한 MEMS 소자의 제작 (Fabrication of MEMS Devices Using SOI(Silicon-On-Insulator)-Micromachining Technology)

  • 주병권;하주환;서상원;최승우;최우범
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.874-877
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    • 2001
  • SOI(Silicon-On-Insulator) technology is proposed as an alternative to bulk silicon for MEMS(Micro Electro Mechanical System) manufacturing. In this paper, we fabricated the SOI wafer with uniform active layer thickness by silicon direct bonding and mechanical polishing processes. Specially-designed electrostatic bonding system is introduced which is available for vacuum packaging and silicon-glass wafer bonding for SOG(Silicon On Glass) wafer. We demonstrated thermopile sensor and RF resonator using the SOI wafer, which has the merits of simple process and uniform membrane fabrication.

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