• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1903-1905
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• 2003

전자기력을 이용하여 탐침형 정보저장장치의 미디어를 제어할 수 있는 초정밀 구동기를 제작하였다. 탐침형 정보저장장치는 데이터 비트의 크기가 10nm 수준이고, 단일 캔틸레버가 점유하는 영역의 크기가 수십 ${\mu}m$${\times}$수십${\mu}m$ 수준이므로, 미디인 구동기는 수 nm의 위치 정확도 및 수십 ${\mu}m$ 수준의 변위 그리고 100Hz이상의 공진 주파수를 확보하여야한다. 본 연구에서 제작한 탐침형 정보저장장치의 미디어 구동기는 고저항 Si wafer 표면을 Deep RIE로 patterning한 후 그 내부를 도금으로 채워 구리 코일을 형성하고 이를 영구자석과 결합시킨 후, 구리 코일에 전류를 흘려 미디어를 구동하는 방식이다. 사용된 영구자석은 SmCo 자석이며 코일의 폭은 $100{\mu}m$이고 간격은 $20{\mu}m$, 높이는 $70{\mu}m$로 결정하였으며, 100Hz 이상의 공진 주파수를 확보하기 위하여 스프링 재질은 구리보다 상대적으로 stiff한 Si을 사용하였다. 미디어의 크기는 $20{\times}20mm^2$, 전체 구동기의 크기는 $30{\times}30mm^2$이며 측정결과 최대변위는 140mA 인가 시 약 ${\pm}127{\mu}m$이다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.503-507
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• 2002

Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

• Journal of Sensor Science and Technology
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• v.15 no.5
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• pp.357-361
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• 2006

This paper reports a new technology to implement complex PDMS microchannels, which are simply constructed using three-dimensional photoresist structures as mold for PDMS replica process. The process utilizes LOR resist as a sacrificial layer to levitate the structural photoresist and multi-step exposure to control the thicknesses of photoresist structures. Various shapes of photoresist structures were successfully fabricated. Using the PDMS replica method, the three-dimensional photoresist structures are demonstrated to be applicable for implementing complex microchannels in PDMS. In addition, more complex multilevel microchannels are constructed by bonding two PDMS layers with just single PDMS alignment.

• Transactions of Materials Processing
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• v.15 no.9 s.90
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• pp.692-696
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• 2006

Micro fabrication of polymeric materials becomes increasingly important. And it is considered as a low-cost alternative to the silicon or glass-based Micro Electro-Mechanical System(MEMS) technologies. In the present study, micro channels were fabricated via LiGA(Lithographie, Galvanoformung, Abformung) process used for Capillary Electrophoresis(CE) chip. Taguchi method was applied to investigate the effects of process conditions in injection molding(melt temperature, injection speed, mold temperature and packing pressure) on the transcription characteristics of the micro channel. It was found that the skin layer disturbs a formation of micro channel. Furthermore, mold temperature and injection speed were two important factors to affect the replication characteristics of micro channel.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2195-2197
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• 2000

In order to detect the ultrasonic that is generated by the partial discharge of the heavy electric machinery a Laser Doppler Vibrometer (LDV) is developed. A Michelson type interferometer which employed heterodyne signal process technique is built to measure the frequency and amplitude of vibration. The output signal of the fast photodetector is a frequency modulated signal centered at 40 MHz. The signal from the detector is amplified and converted to intermediate frequency centered at 1 MHz after mixing process. The voltage output that is proportional to the velocity of the moving surface(PZT) is obtained using PLL. The spectrum of the FM signal is analyzed and integration method was introduced to obtain amplitude information. This LDV can be used to measure the vibration of MEMS devices, automobiles, HDD and CDP.

• Journal of Sensor Science and Technology
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• v.13 no.1
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• pp.72-77
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• 2004

In this paper, we fabricated an apparatus of the electro-chemical discharge drilling for boring narrow through-hole into a glass. In the electrolyte, electro-chemical discharge creates high temperature condition by the electro-discharge energy. Therefore, glass are removed by the accelerated chemical reaction with glasses and chemicals in the high temperature condition. For optimization of the electro-chemical discharge drilling, the process condition was studied experimentally as a function of the electrolyte concentration, supply voltage and process time. The optimum condition was from DC25V to DC30V of applied voltage, 35 wt% NaOH solution.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.177-181
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• 2000

The tunneling current is exponentially dependent on the separation gap between a pair of conductors. The detection of displacement can be, therefore, carried out by measurment of a variation in the tunneling current. In this experiment, we fabricated pyramid-type silicon tunneling devices in which a tunneling current flow between a micro-tip and $Si_3N_4$ thin film membrane. A MEMS process was used for the fabrication of the tunneling devices. The micro-tips were formed on Si wafers by undercutting a differently oriented square of $SiO_2$ with KOH. The stiffness of the $Si_3N_4$ films were observed and the model for the stiffness calculation, which is useful in predicting the stiffness even when the stiffness ranges beyond the scope of the normal experimental condition, was suggested.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.131-134
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• 2009

The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at $900^{\circ}C$ with a pressure of 4 torr using $SiH_2Cl_2$ (100%, 35 sccm) and $C_2H_2$ (5% in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5% in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 ${\AA}$ thickness was 32.7 ${\Omega}-cm$ and decreased to 0.0129 ${\Omega}-cm$ at 16,963 ${\AA}$. The measurement of the resistance variations at different thicknesses were carried out within the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a $Si_3N_4$ membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ${\mu}m$${\times}$250 ${\mu}m$ $Si_3N_4$ membrane was $410^{\circ}C$ at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.1
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• pp.73-76
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• 2010

The issue of inspection and characterization of microstructures has emerged as a major consideration in design, fabrication, and detection of MEMS devices. However, the conventional measurement techniques, including scanning electron microscopy (SEM) imaging, atomic force microscopy (AFM) scanning, and mechanical surface profiler, require often destructive process or may be difficult to measure with a wafer scale. In this paper, we characterize the surface profiles of microstructures using an optical scanner based on a DVD pick-up module. Scanning images of the microstructures are successfully generated using the intensity of reflected light from different depths of the surface profiles, based on the focus error signal (FES) from photodiodes. It is shown that the proposed optical scanner can be used as an alternative measurement system with high performance and low cost, compared to conventional measurement techniques.

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.250-255
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• 2008

A vanadium pentoxide ($V_2O_5$)-based bolometric infrared (IR) sensor has been designed and fabricated using micro electro mechanical systems (MEMS) technology for glucose detection and its resistive characteristics has been illustrated. The proposed bolometric infrared sensor is composed of the vanadium pentoxide array that shows superior temperature coefficient of resistance (TCR) and standard silicon micromachining compatibility. In order to achieve the best performance, deposited $V_2O_5$ thin film is optimized by adequate rapid thermal annealing (RTA) process. Annealed vanadium oxide thin film has demonstrated a linear characteristic and relatively high TCR value (${-4}%/^{\circ}C$). The resistance of vanadium oxide is changed by IR intensity based on glucose concentration.