• Transactions on Electrical and Electronic Materials
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• v.7 no.6
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• pp.279-282
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• 2006

[ $Pb(Zr_{0.4}Ti_{0.6}O_{3}\;and\;Pb(Zr_{0.6}Ti_{0.4})O_{3}$ ] paste were made and alternately screen-printed on the $Al_{2}O_{3}$ substrates. We have introduced a press-treatment to obtain a good densification of screen printed films. The porosity of the thick films was decreased with increasing the applied pressure and the thick films pressed at 60 MPa showed the dense microstructure and thickness of about $76\;{\mu}m$. The remanent polarization and coercive field increased with increasing applied pressure and the values for the PZT thick films pressed at 60 MPa were $17.04{\mu}C/cm^{2}$ and 78.09 kV/cm, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.921-925
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• 2000

Characteristics of Pb(Mg, Nb)O$_3$-Pb(Zr, Ti)O$_3$system thick films fabricated by a screen printing method were investigated. The buffer layer were coated with various thickness of Ag-Pd by screen printing to investigate the effect as a diffusion barrier and deposited Pt as a electrode by sputtering on Ag-Pb layer. The printed thick films were burned out at 650$\^{C}$ and sintered at 950$\^{C}$ in O$_2$condition for each 20, 60min after printing with 350mesh screen. The thickness of piezoelectric thick film was 15∼20㎛ and Ag-Pb layer acted as a diffusion barrier above 3㎛ thickness. The PMN-PZT thick films were screen printed on Pt/Ag-Pb(6m) and sintered by 2nd step (650$\^{C}$/20min and 950$\^{C}$/1h) using paste mixed PMN-PZT and binder in the ratio of 70:30, and the remnant polarization of thick film was 9.1$\mu$C/㎠ in this conditions.

• Journal of the Korean institute of surface engineering
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• v.47 no.5
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• pp.215-220
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• 2014

Electrodeposition behaviors of Pd-Ni alloys were investigated from the polarization curves in a solution containing ethylenediamine as complexing agent. The microstructure and hardness of electrodeposited Pd-Ni alloys were also characterized. Codeposition of Pd-Ni alloys was successfully performed in the wide current density ranging from 2 to $5000A{\cdot}m^{-2}$ because the deposition potential of Pd became close to that of Ni in the ethylenediamine-contained solution. It was also found from X-ray diffraction patterns that the solid solution between Pd and Ni was formed with variation of the composition of alloys. The measured hardness of Pd-Ni alloys increased with increasing the contents of Ni due to solid solution strengthening and grain refinement. The electrodeposited Pd-Ni alloys also exhibited a crack free smooth surface morphology from the SEM observation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.656-658
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• 2004

Pb$(Zr_{0.8}Ti_{0.2})TiO_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70\sim90{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$t were approximately 676 and 1.4%, respectively. The remanent polarization and the coercive field of the PZT thick film sintered at $1050^{\circ}C$ were $21.15{\mu}C/cm^2$ and 10.1 kV/cm, mapetively

• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.466-473
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• 2001

Ni-YSZ 음극의 미세구조와 임피던스특성에 미치는 YSZ 입자크기 및 소결온도의 영향을 고찰하였다. 0.3~0.6$\mu\textrm{m}$의 미세한 NiO 분말을 사용할 경우에는 NiO 분말과 크기가 비슷한 미세한 YSZ 분말(TZ8Y, 0.3$\mu\textrm{m}$)을 첨가했을 때 NiO의 입성장을 억제하는 효과가 가장 크고 환원후 Ni의 입자크기를 미세하게 유지할 수 있는 미세구조를 형성하였다. 또한 미세한 YSZ 분말 (TZ8Y, 0.3$\mu\textrm{m}$)과 조대한 YSZ 분말(FYT13.0, 2$\mu\textrm{m}$)의 혼합비를 달리하여 후막을 제조하였을 때에 TZ8Y 분말만 첨가한 조성이 가장 낮은 분극 저항을 나타내었다. 한편 소결온도는 삼상계면의 양과 분극저항에 영향을 주었으며, 140$0^{\circ}C$에서 소결한 시편의 분극저항이 가장 낮은 값을 나타내었다.

• Journal of the Korean institute of surface engineering
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• v.25 no.2
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• pp.82-89
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• 1992

The effect of interlayer coating of Ni and Ti on corrosion behavior was studied in TiN ion plated steel plate. Interlayer coating was carried out in a single and bi-layer to a various thickness combination prior to final TiN coating of $2\mu\textrm{m}$. Corrosion behavior was evaluated by anodic polarization test in 1N H2SO4 as well as salt spray test. Porosity of each coating was also tested by using SO2 test. Corrosion resistance was improved with increasing the thickness of Ni interlayer coating and Ni-Ti interlayer coating markedly enhanced the corrosion resistance. Ni/Ti interlayer coating of $2\mu\textrm{m}$/2$\mu\textrm{m}$ prior to $2\mu\textrm{m}$ TiN coating decreased the corrosion current density of active range by an order of 4 and that of passive range by an order of 1. This improvement was associated with the retardation of corrosive agent penetration with increasing coating thickness and inherent corrosion resistance of Ni and Ti interlayers, Ni/Ti interlayers coating were also very effective in improvement of corrosion resistance under salt atmosphere.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.128-132
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• 1998

2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{\circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{\mu}m$ to $15{\mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${\mu}C/cm^2$ and Optical transmittance was decreased.

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.133-138
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• 1991

Eosin-doped boric acid glass saturable absorber has a relatively low saturation intensity (700 mW/$\textrm{cm}^2$) and low power optical phase conjugation is achived by the degenerate four-wave mixing (DFWM) experiments. Polarization properties of optical phase conjugation by DFWM have been demonstrated in this materials using a cw argon ion laser at wavelength 488 nm. The dependence of the phase conjugated reflectivity on the intensity and wavelength of the pump beam is examined. The magnitude of the energy exchange by the nondegenerate two-wave mixing (NDTWM) is maximized by frequency difference between the two beams of $\varphi\simeq$ 1100 Hz.

• Biomolecules & Therapeutics
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• v.29 no.6
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• pp.678-684
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• 2021

Luteolin, a flavonoid present in several fruits, vegetables, nuts, and herbs reportedly exhibits anti-cancer and anti-inflammatory properties. However, the effect of luteolin on endometriosis, a painful condition characterized by the ectopic growth of endometrial tissue and pelvic inflammation, remains elusive. Herein, we observed that luteolin inhibited cell growth and induced apoptosis of 12Z human endometriotic cells by activating caspase-3, -8, and -9. Additionally, luteolin significantly inhibited the expression of key chemokines, C-C motif chemokine ligand 2 (CCL2) and CCL5, required for monocyte/macrophage influx at endometriotic sites. In macrophages stimulated by endometriotic cells, luteolin treatment suppressed the intracellular expression of M2 markers and endometriosis-promoting factors. Collectively, our data suggest that luteolin exerts anti-endometriotic effects by stimulating endometriotic cell apoptosis and hindering the alternative activation of macrophages.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.21-27
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• 1998

Electrical and optical characteristics of ZnS:Mn/ZnS:Tb multilayer TFEL devices were investigated for multi-color electroluminescent display applications. Emission spectra of M $n^{2+}$ and T $b^{3+}$ ions were observed from ZnS:Mn/ZnS:Tb multi-layer TFEL devices, and were very broad from 540 nm to 640 nm. Saturation luminance measured at 155 V was 1025 Cd/$m^2$. C-V, $Q_{t}$ - $V_{p}$ curves showed that the phosphor capacitance ( $C_{p}$ ) and the insulator capacitance ( $C_{i}$ ) were 13.5nF/$\textrm{cm}^2$ and 60 nF/$\textrm{cm}^2$, respectively. Threshold voltage( $V_{thl}$) was shown to decrease from 126 V to 93 V due to the increase of the applied voltage from 155 V to 185 V, which was attributed to the increase of the polarization charge. The equation for the calculation of the threshold voltage as a function of the applied voltage was proposed for the first time. The calculated threshold voltage agreed well with the data obtained from the measurement.t.t.t.