• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.1
• /
• pp.6-10
• /
• 2009

In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.7 no.6
• /
• pp.1313-1318
• /
• 2006

The mechanism fur the surface film formation was studied by in situ Atomic Force Microscopy (AFM) observation of a highly oriented pyrolytic graphite (HOPG) basal plane surface during cyclic voltammetry at a slow scan-rate of 0.5 mV $s^{-1}$ in 1 moi $dm^{-3}$ (M) $LiPF_6$ dissolved in a mixture of ethylene carbonate (EC) and diethyl carbonate (DEC). Decomposition of the electrolyte solution began at a potential around 2.15 V vs. $Li^+$/Li on step edges. In the potential range 0.95-0.8 V vs. $Li^+$/Li, flat areas (hill-like structures) and large swelling appeared on the surface. It is considered that these two features were formed by the intercalation of solvated lithium ions and their decomposition beneath the surface, respectively. At potentials more negative than 0.80 V vs. $Li^+$/Li, particle-like precipitates appeared on the basal plane surface. After the first cycle, the thickness of the precipitate layer was 30 nm. The precipitates were considered to be decomposition of the lithium salt ($LiPF_6$) and solvent molecules (EC and DEC), and to have an important role in suppressing further solvent decomposition on the basal plane.

• Korean Journal of Acupuncture
• /
• v.24 no.3
• /
• pp.81-90
• /
• 2007

Objectives : This study was performed to evaluate the effect of occulsal plane balancing therapy on pain control without another therapy. Methods : This clinical study was carried out in 6 cases of patients which had neck and shoulder pain. In this study we treated the patients by balancing therapy of occulsal plane using paper. We measured Visual Analogue Scale(V.A.S.) for pain intensity, Range of Motion(R.O.M.) and difference of thermographic temperature between pain site and the opposite before and 15 minutes after treatment and analyzed the change of variables. Also, we analyzed the correlation among hypomovable site of neck rotaion(HS), pain site(PS) and thick site of paper(TS). Results : 1. The average of skin temperature was decreased from $0.45{\pm}0.11$ to $0.24{\pm}0.13$ significantly(p<0.05). 2. The average of V.A.S was decreased from $10.00{\pm}0.00$ to $3.83{\pm}0.99$ significantly(p<0.05). 3. In the correlation analysis among HS, PS and TS, there is negative correlation between HS and TS, but there was no statistical significance. Conclusions : In the study, the balancing therapy of occulsal plane warrants further investigation in the change of skin temperature and R.O.M. of the joint, pain control.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1985-1987
• /
• 2002

Silicon bulk micromachined micromirrors are designed and fabricated for out-of-plane right angle reflection. The micromirror is comprised of a minor plate, springs, magnetic bars and electrodes. Single crystalline silicon is used for a flatness improvement of a mirror plate. Out-of-plane right angle reflection requires a 45 degree operation of the micromirror. The micromirrors are operated by applying a magnetic field, which is generated by a coil located below a substrate. For an individual mirror operation, each mirror is clamped using an electrostatic force against the electromagnetic force. Angular deflections are measured and compared with theoretical data. The micro mirror operates up to 45 degree when magnetic field is 4 kA/m which is generated by a 115 mA coil current Simple addressing is tested, and it is shown that a clamping voltage is less than 5V.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2006.05a
• /
• pp.501-502
• /
• 2006

In-plane type micro piezoelectric micro grippers with pneumatic lines for manipulation biological cells and micro parts were designed, fabricated, and characterized. Micro grippers were fabricated through the final micro-sanding process after wafer level bonding between the etched 4' Si wafer with pneumatic channels and 4' glass wafer. Displacements between two jaws of fabricated micro grippers were linearly increased with applying voltages to piezoelectric actuator. In the case of applying 80 V, the displacement between two jaws was $160{\mu}m$. Using fabricated micro grippers, manipulation tests for biological cell and micro parts with the sizes less than $100{\mu}m$ are in process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.9
• /
• pp.727-731
• /
• 2012

This paper dealt with the measurement and analysis of electromagnetic waves radiated from a partial discharge (PD) source in insulation oil to apply condition monitoring of oil-immersed transformers. Two types of narrow-band monopole antennas with the resonant frequency of a 500 MHz and a 1 GHz were designed and fabricated. Also, a needle-plane electrode system was manufactured to simulate PDs and the curvature radius of the needle is 10 ${\mu}m$ and the diameter of the plane is 60 mm. Electromagnetic wave was measured by the PD measurement system with the monopole antennas. Detection sensitivity of the fabricated antenna was compared for the same PD magnitude; 620 $mV_{peak}$ for the 500 MHz antenna and 960 $mV_{peak}$ for the 1 GHz antenna to the PD magnitude of 74 pC. Consequently, the 1 GHz monopole antenna is more effective to detect PDs in oil-immersed transformers.

• Progress in Superconductivity
• /
• v.3 no.1
• /
• pp.49-55
• /
• 2001

Josephson junction arrays were fabricated by DC magnetron sputtering, self-aligning and reactive ion etching technique. The Al native oxide, formed by thermal oxidation, was used as the tunneling barrier of Nb/$Al-A1_2$$O_3$Nb trilayer. The arrays have 2,000 Josephson junctions with the area of $14\mu\textrm{m}$ $\times$ $46\mu\textrm{m}$. The gap voltages were in the range of 2.5 ~2.6 mV and the spread of critical current was $\pm$11~14%. When operated at 70~94 ㎓, the arrays generated zero-crossing steps up to 2.1~2.4 V. To improve transmission of microwave power and prevent diffusion of oxygen into Nb ground-plane while depositing $SiO_2$dielectric, we applied a plasma nitridation process to the Nb ground-plane. The microwave power was well propagated in Josephson junction arrays with nitridation. The difference in microwave transmission 7an be interpreted by the surface impedance change depending on nitridation.

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.3
• /
• pp.67-74
• /
• 2018

Thermoelectric thin film devices of the in-plane configuration consisting of 8 pairs of n-type $Bi_2Te_3$ and p-type $Sb_2Te_3$ legs were processed on Si submounts by electrodeposition. The thermoelectric generation characteristics of the thin film devices were investigated with respect to the apparent temperature difference ${\Delta}T$ caused by LED lighting as well as the change of the leg thickness. When ${\Delta}T$ was 7.4 K, the open circuit voltages of 6.1 mV, 7.4 mV, and 11.8 mV and the maximum output powers of 6.6 nW, 12.8 nW, and 41.9 nW were measured for the devices with the thermoelectric legs of which thickness were $2.5{\mu}m$, $5{\mu}m$, and $10{\mu}m$, respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.2
• /
• pp.139-145
• /
• 2014

Control of threshold voltage ($V_T$) by ground-plane (GP) technique for planar tunnel field-effect transistor (TFET) is studied for the first time using TCAD simulation method. Although GP technique appears to be similarly useful for the TFET as for the metal-oxide-semiconductor field-effect transistor (MOSFET), some unique behaviors such as the small controllability under weak ground doping and dependence on the dopant polarity are also observed. For $V_T$-modulation larger than 100 mV, heavy ground doping over $1{\times}10^{20}cm^{-3}$ or back biasing scheme is preferred in case of TFETs. Polarity dependence is explained with a mechanism similar to the punch-through of MOSFETs. In spite of some minor differences, this result shows that both MOSFETs and TFETs can share common $V_T$-control scheme when these devices are co-integrated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.170-170
• /
• 2010

a-plane 혹은 m-plane면을 사용하는 무분극 GaN LED는 c축 방향으로 발생하는 분극의 영향을 받지 않기 때문에 분극 GaN LED에 비해 높은 내부 양자효율을 가진다. 또한 무분극 GaN는 상대적으로 고농도의 p-type 도핑이 가능하기 때문에 광효율을 높일 수 있다. 하지만 이와 같은 장점에도 불구하고 무분극 GaN는 성장모드의 비대칭으로 인해 높은 결정성과 mirror-like한 표면을 얻기가 힘들다. 본 논문에서는 Metalorganic chemical-vapor deposition (MOCVD) 장비를 사용하여 r-plane 사파이어 기판위에 a-plane GaN을 성장시켰다. 일반적으로 사용하는 저온에서의 nucleation layer 성장 대신 $1050^{\circ}$의 고온에서 성장 시킨후 일반적으로 사용하는 two-step 성장방법으로 그위에 5.5um정도의 GaN을 성장시켰다. 성장시 Trimethylgallium(TMGa)와 암모니아를 각각 Ga과 N 소스로 이용하였고 캐리어 가스는 수소를 사용하였다. 비대칭 결정성을 줄이기 위해 3D island growth mode에서의 성장조건을 바꾸어 c축과 m축 방향으로의 X-ray 결정성(FWHM) 차이가 564 arcsec에서 206 arcsec로 변화 시켰다. Normarski 현미경으로 표면을 관찰한 결과 v-defect이 없고 a-plane GaN에서 볼 수 있는 전형적인 줄무늬 패턴을 가지는 표면을 얻었으며 광학적 특성을 보기 위해 Photoluminescence (PL)을 측정하였다.