JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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VT-Modulation of Planar Tunnel Field-Effect Transistors with Ground-Plane under Ultrathin Body and Bottom Oxide

  • Sun, Min-Chul (Process Integration Team (S. LSI), Semiconductor Business Group, Samsung Electronics Co. Ltd.) ;
  • Kim, Hyun Woo (Inter-university Semiconductor Research Center and Dept. of Electrical Engineering and Computer Science, Seoul National University) ;
  • Kim, Hyungjin (Inter-university Semiconductor Research Center and Dept. of Electrical Engineering and Computer Science, Seoul National University) ;
  • Kim, Sang Wan (Inter-university Semiconductor Research Center and Dept. of Electrical Engineering and Computer Science, Seoul National University) ;
  • Kim, Garam (Inter-university Semiconductor Research Center and Dept. of Electrical Engineering and Computer Science, Seoul National University) ;
  • Lee, Jong-Ho (Inter-university Semiconductor Research Center and Dept. of Electrical Engineering and Computer Science, Seoul National University) ;
  • Shin, Hyungcheol (Inter-university Semiconductor Research Center and Dept. of Electrical Engineering and Computer Science, Seoul National University) ;
  • Park, Byung-Gook (Inter-university Semiconductor Research Center and Dept. of Electrical Engineering and Computer Science, Seoul National University)
  • Received : 2012.04.30
  • Accepted : 2013.12.22
  • Published : 2014.04.30
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Abstract

Control of threshold voltage ($V_T$) by ground-plane (GP) technique for planar tunnel field-effect transistor (TFET) is studied for the first time using TCAD simulation method. Although GP technique appears to be similarly useful for the TFET as for the metal-oxide-semiconductor field-effect transistor (MOSFET), some unique behaviors such as the small controllability under weak ground doping and dependence on the dopant polarity are also observed. For $V_T$-modulation larger than 100 mV, heavy ground doping over $1{\times}10^{20}cm^{-3}$ or back biasing scheme is preferred in case of TFETs. Polarity dependence is explained with a mechanism similar to the punch-through of MOSFETs. In spite of some minor differences, this result shows that both MOSFETs and TFETs can share common $V_T$-control scheme when these devices are co-integrated.

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References

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