• Korean Journal of Materials Research
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• v.15 no.3
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• pp.149-154
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• 2005

Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.241-245
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• 2006

In this study, the characteristics of large area internal linear ICP sources of 1020mm X 920mm(substrate area is 880 X 660mm) were investigated using two different types of antenna, that is, a conventional serpentine-type antenna and a newly developed multiple U-type antenna. The multiple antenna showed a higher plasma density, a higher radical density, and more plasma stability compared to the serpentine-type antenna, and it appeared from the higher inductively coupling and less standing wave effect compared to the serpentine-type antenna. Using the multiple U-type antenna, the plasma density of $2\times10^{11}/cm^3$ with the plasma uniformity of 4% could be obtained using 15mTorr Ar and 5000W of RF power.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.29-35
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• 1999

Inductively coupled plsama etching of platinum thin film was studied using $O_2$ addition to $Cl_2$/Ar gas plasma. In this study, Pt etching mechanism was investigated with Ar/$Cl_2$ /$O_2$ gas plasma by using XPS and QMS. Ion current density was measured with Ar/$Cl_2$ /$O_2$ gas plasma by using single Langmuir probe. It was confirmed by using QMS and single Langmuir probe that Cl and Ar species rapidly decreased and ion current density was also decreased with increasing $O_2$ gas ratios. These results implied that the decrease of Pt etch rate is due to the decrease of reactive species ans ion current density with increasing $O_2$ gas mixing ratios. A maximum etch rate of 150nm/min and the oxide selectivity of 2.5 were obtained at Ar/$Cl_2$ /$O_2$ flow rate of 50 seem, RF power of 600 W, dc bias voltage of 125 V, and the total pressure of 10 mTorr.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.275.2-275.2
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• 2014

현재 자동차 분야에서 차량 경량화의 한 수단으로 자동차용 유리를 고강도 투명 플라스틱 소재인 Polycarbonate(PC)로 대체하고자 하는 연구가 이루어지고 있다. 하지만, PC의 낮은 내마모 특성과 자외선에 의한 열화 및 변색 현상은 해결하여야 할 문제점으로 지적되고 있으며, 에너지 소비 저감을 위하여 적외선 영역 반사율(reflectance)이 높은 저방사(low emissivity) 특성이 요구되고 있다. 본 연구에서는, ICP-assisted reactive magnetron sputtering 장비를 이용하여 투과율(transmittance)이 확보되고, 고경도 특성을 갖는 Al-Si-N와 300 nm 파장 이하의 자외선 차단 특성이 있는 SiN:H 그리고 저방사 특성을 위해 Al을 증착하였고, 박막의 증착 순서는 SiN:H 박막을 가장 아래에 증착하고 그 위에 Al/Al-Si-N 박막을 다층으로 형성하였다. 박막의 chemical state와 crystallinity를 확인하기 위하여 XPS(X-ray Photoelectron Spectroscopy), XRD (X-ray Diffraction)를 이용하여 분석하였다. Knoop ${\mu}$-hardness tester와 Taber tester를 이용하여 경도 및 내마모 특성을 분석하였다. 제작된 샘플의 Al-Si-N 박막 경도는 Si 비율에 따라 다른 경도 특성을 갖는데, 실제 Si/(Al+Si) 비율이 24%에서 최대 31 GPa의 경도 값을 갖는 것을 확인하였다. UV-Vis Spectrometer를 이용하여 250 nm~700 nm 파장의 투과율을 측정하였고, 자외선 영역의 경우 SiN:H 박막에 의해 300 nm 이하의 파장에서 2% 이하의 투과율을 확인하였다. 그리고 FT-IR(Fourier Transform Infrared Spectroscopy)를 이용하여 $2.5{\mu}m{\sim}15{\mu}m$ 파장의 반사율을 이용하여 방사율을 측정하였는데, 3*(Al/Al-Si-N) 구조의 다층 박막의 경우 방사율은 0.27로 측정되었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.56-56
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• 1999

For advanced TFT-LCD manufacturing processes, dry etching of thin-film layers(a-Si, $SiN_x$, SID & gate electrodes, ITO etc.) is increasingly preferred instead of conventional wet etching processes. To dry etch Al gate electrode which is advantageous for reducing propagation delay time of scan signals, high etch rate, slope angle control, and etch uniformity are required. For the Al gate electrode, some metals such as Ti and Nd are added in Al to prevent hillocks during post-annealing processes in addition to gaining low-resistivity($<10u{\Omega}{\cdot}cm$), high performance to heat tolerance and corrosion tolerance of Al thin films. In the case of AI-Nd alloy films, however, low etch rate and poor selectivity over photoresist are remained as a problem. In this study, to enhance the etch rates together with etch uniformity of AI-Nd alloys, magnetized inductively coupled plasma(MICP) have been used instead of conventional ICP and the effects of various magnets and processes conditions have been studied. MICP was consisted of fourteen pairs of permanent magnets arranged along the inside of chamber wall and also a Helmholtz type axial electromagnets was located outside the chamber. Gas combinations of $Cl_2,{\;}BCl_3$, and HBr were used with pressures between 5mTorr and 30mTorr, rf-bias voltages from -50Vto -200V, and inductive powers from 400W to 800W. In the case of $Cl_2/BCl_3$ plasma chemistry, the etch rate of AI-Nd films and etch selectivity over photoresist increased with $BCl_3$ rich etch chemistries for both with and without the magnets. The highest etch rate of $1,000{\AA}/min$, however, could be obtained with the magnets(both the multi-dipole magnets and the electromagnets). Under an optimized electromagnetic strength, etch uniformity of less than 5% also could be obtained under the above conditions.

• Journal of Soil and Groundwater Environment
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• v.20 no.4
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• pp.113-121
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• 2015

The contaminated soil at abandoned smelter areas present challenge for remediation, as the degraded materials are typically deficient in nutrients, and rich in toxic heavy metals and metalloids. Bioremediation technique is to isolate new strains of microorganisms and develop successful protocols for reducing metal toxicity with heavy metal tolerant species. The present study collected metal contaminated soil and characterized for pH and EC values, and heavy metal contents. The pH value was 5.80, representing slightly acidic soil, and EC value was 13.47 mS/m. ICP-AES analytical results showed that the collected soil samples were highly contaminated with various heavy metals and metalloids such as lead (183.0 mg/kg), copper (98.6 mg/kg), zinc (91.6 mg/kg), and arsenic (48.1 mg/kg), respectively. In this study, a bacterial strain, Bacillus cereus KM-15, capable of adsorbing the heavy metals was isolated from the contaminated soils by selective enrichment and characterized to apply for the bioremediation. The effects of heavy metal on the growth of the Bacillus cereus KM-15 was determined in liquid cultures. The results showed that 100 mg/L arsenic, lead, and zinc did not affect the growth of KM-15, while the bacterial growth was strongly inhibited by copper at the same concentration. Further, the ability of the bacteria to adsorb heavy metals was evaluated.

• Economic and Environmental Geology
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• v.33 no.3
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• pp.181-193
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• 2000

This study was undertaken to evaluate the drinking water quality based on physicochemical properties and chemical compositions of the supply water in the Daedeok Campus, and to verify the analytical reliabilities of ICP-MS and IC equipped in the Central Research Facilities at Chungnam National University , Korea. The supply water belongs to $Ca^{2+}-({HCO_3}^-+{SO_4}^{2-})$type, whereas the original water from the Daecheong lake belongs to $(Ca^{2+}-(Mg^{2+})-{HCO_3}^-$ type. Generally, temperature (14.1$^{\circ}C$), pH (6.95), Eh (0 mV), electrical conductivity (117${\mu}$S/cm) and TDS (86.975mg/l) of supply water were higher than those of original lake water . Results using WATEQ4F revealed that potentially toxic ions of the supply water might exist mainly as free metals ($M^{2+}$) and a small amount as ${CO_3}^{2-}$ and $OH^-$ complexes. Also, the water composition belongs to the kaolinite field. Calculated average enrichment indies of the supply water normalized to lake water for anions, mamor cations, toxic cations and total ions are 1.05 , 1.56, 13.05 and 1.17 , respectively. Those values of the ground water in the Daedeok Campus showed 1.71, 4.78, 5.71 and 2.49 , respectively. However , contents of all constituents of these water are within the drinking water standard. All samples were filtered before the chemical analysis. Pale yellow or yellowish brown colored materials of colloidal particles coated the filter paper to thickness of 0.02 to 0.2mm. these are mainly Fe-Cy-Zn compounds with traces of Ni and Pb, the net weights of which compounds range from 0.01to 3.20mg/l. Most elements did not show any conceivable filtering effect of Cu, Fe and Zn. Especially, mean concentration of total Fe decreased considerably from 168.52${\mu}g$/lto 42.58${\mu}g$/l by filtering .

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1803-1805
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• 1998

Electron temperature, electron density and electron energy distribution function were measured in Radio-Frequency Inductively Coupled Plasma(RFICP) using a probe method. Measurements were conducted in argon discharge for pressure from 10 mTorr to 40 mTorr and input rf power from 100W to 600W and flow rate from 3 sccm to 12 sccm. Spatial distribution electron temperature and electron density and electron energy distribution function were measured for discharge with same aspect ratio(R/L=2). Electron temperature was found to depend on pressure, but only weakly on power. Electron density and electron energy distribution function strongly depended on both pressure and power. Electron density and electron energy distribution function increased with increasing flow rate. Radial distribution of the electron density and electron energy distribution function were peaked in the plasma center. Normal distribution of the electron density electron energy distribution function were peaked in the center between quartz plate and substrate. These results were compared to a simple model of ICP, then we found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.659-664
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• 2016

Ash deposition of heat exchange boiler, caused mainly by accumulation of particulate matter, reduces heat transfer of the boiler system. Heat and mass transfer through porous media such as ash deposits mainly depend on the microstructure of deposited ash. Therefore, in this study, we investigated microstructural and thermal properties of the ash deposited on the boiler tube. Samples for this research were obtained from the fuel economizer tube in an industrial waste incinerator. To characterize microstructures of the ash deposit samples, scanning electron microscope (SEM), energy-dispersive spectroscopy (EDS), inductively coupled plasma optical emission spectroscopy (ICP-OES), X-ray diffraction (XRD) and BET analysis were employed. The results revealed that it had a porous structure with small particles mostly of less than a few micrometers; the contents of Ca and S were 19.3, 22.6% and 18.5, 18.7%, respectively. Also, the results showed that it consisted mainly of anhydrite ($CaSO_4$) crystals. - The thermal conductivities of the ash deposit sample obtained from the economizer tube in industrial waste incinerator were measured to be 0.63 and 0.54 W/mK at $200^{\circ}C$, which were about 100 times less than the thermal conductivity (61.32 W/mK) of the boiler tube itself, indicating that ash deposition on the boiler tube was closely related to a decrease in boiler heat transfer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.298-303
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• 2003

Bi$_4$-$_{x}$EU$_{x}$Ti$_3$O$_{12}$ (BET) thin films were etched by inductively coupled CF$_4$/Ar plasma. We obtained the maximum etch rate of 78 nm/min at the gas mixing ratio of CF$_4$(10%)/Ar(90%). The variation of volume density for F and Ar atoms are measured by the optical emission spectroscopy. As CF$_4$increased in CF$_4$/Ar plasma, the emission intensities of F increase, but Ar atoms decrease, which confirms our suggestion that emission intensity is proportional to the volume density of atoms. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O and the Ti-O peaks are changed. By pure Ar plasma, intensity peak of the oxygen-metal (O-M : TiO$_2$, Bi$_2$O$_3$, Eu$_2$O$_3$) bond was seemed to disappear while the intensity of pure oxygen peak showed an opposite tendency. After the BET thin films was etched by CF$_4$/Ar plasma, the peak intensity of O-M bond increase slowly, but more quickly than that of peak belonged to pure oxygen atoms due to the decrease of Ar ion bombardment. Scanning electron microscopy was used to investigate etching Profile. The Profile of etched BET thin film was over 85$^{\circ}$./TEX>.