• Title/Summary/Keyword: M/W Band

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Design of W Band Frequency Synthesizer Using Frequency Tripler (주파수 3체배기를 이용한 W 밴드 주파수 합성기 설계)

  • Cho, Hyung-Jun;Cui, Chenglin;Kim, Seong-Kyun;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.10
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    • pp.971-978
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    • 2013
  • This work presents a W band frequency synthesizer which is composed of 26 GHz VCO, Phase Locked Loop and frequency tripler using 65 nm RF CMOS process. Frequency tuning range of 26 GHz VCO covers the band from 22.8~26.8 GHz and final output frequency of the tripler is from 74 to 75.6 GHz. The fabricated frequency synthesizer consumes 75.6 mW and its phase noise is -75 dBc/Hz at 1 MHz offset, -101 dBc/Hz 10 MHz offset respectively.

Design of W-band Cascode Mixer with High Conversion Gain using 0.1-μm GaAs pHEMT Process (0.1-μm GaAs pHEMT 공정을 이용한 높은 변환이득을 가지는 W-대역 캐스코드 혼합기 설계)

  • Choe, Wonseok;Kim, HyeongJin;Kim, Wansik;Kim, Jongpil;Jeong, Jinho
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.18 no.6
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    • pp.127-132
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    • 2018
  • In this paper, a high conversion gain cascode mixer was designed in W-band and verified by the fabrication and measurements. In the high frequency band such as a W-band, the conversion loss of a mixer is increased because of the poor performance of transistors. This high conversion loss of the mixer requires additional circuits which can give an extra gain such as an RF buffer amplifier, and this can affects the linearity and stability of the overall systems. Therefore, it is necessary to maximize the conversion gain of the mixer. To maximize the conversion gain of the mixer, biases of the transistor were optimized, and output load impedance was optimized by the load-pull simulations. The designed mixer was fabricated in $0.1-{\mu}m$ GaAs pHEMT technology and verified by the measurements. The measurement results shows a maximum conversion gain of -4.7 dB at W-band and an input 1-dB compression point of 2.5 dBm.

A 3.6/4.8 mW L1/L5 Dual-band RF Front-end for GPS/Galileo Receiver in $0.13{\mu}m$ CMOS Technology (L1/L5 밴드 GPS/Galileo 수신기를 위한 $0.13{\mu}m$ 3.6/4.8 mW CMOS RF 수신 회로)

  • Lee, Hyung-Su;Cho, Sang-Hyun;Ko, Jin-Ho;Nam, Il-Ku
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.421-422
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    • 2008
  • In this paper, CMOS RF front-end circuits for an L1/L5 dual-band global positioning system (GPS)/Galileo receiver are designed in $0.13\;{\mu}m$ CMOS technology. The RF front-end circuits are composed of an RF single-to-differential low noise amplifier, an RF polyphase filter, two down-conversion mixers, two transimpedance amplifiers, a IF polyphase filter, four de-coupling capacitors. The CMOS RF front-end circuits provide gains of 43 dB and 44 dB, noise figures of 4 dB and 3 dB and consume 3.6 mW and 4.8 mW from 1.2 V supply voltage for L1 and L5, respectively.

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A W-band Cassegrain Antenna of the Target Detecting Fuze Sensor (표적감지 신관센서용 W-대역 카세그레인 안테나)

  • Jung, Myung-Suk;Uhm, Won-Young;Kim, Wan-Joo
    • Journal of the Korea Institute of Military Science and Technology
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    • v.9 no.3
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    • pp.101-108
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    • 2006
  • This paper describes the design, fabrication, and measured results of a W-band Cassegrain antenna suitable for the target detecting fuze sensor. The Cassegrain antenna is designed using MATLAB and MWS of CST. We use the multi-mode horn antenna as a feeder. The measurement results are as follows: The gain is about 41dB; SLL is 17.7dB; 3dB beamwidth is about $1.51^{\circ}$ in E-plane and $1.45^{\circ}$ in H-plane. The magnitude of leakage signals is about 43.5mVpp when the fabricated antenna and the transceiver of the fuze sensor ire combined. As a result, the designed W-band Cassegrain antenna could be quite applicable to the target detecting fuze sensor.

Design of W-Band Diode Detector (W-Band 다이오드 검출기 설계)

  • Choi, Ji-Hoon;Cho, Young-Ho;Yun, Sang-Won;Rhee, Jin-Koo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.3
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    • pp.278-284
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    • 2010
  • In this paper, a millimeter-wave detector using zero-bias schottky diode is designed and fabricated at W-band. It consists of LNA(Low Noise Amplifier) and detector module to improve sensitivity. LNA case with a highly stop-band characteristic is designed to prevent the oscillation by LNA MMIC chip. Diode detector of planar structure is fabricated for the easy connection with LNA module and zero bias Schottky diode is utilized. In practice, the fabricated diode detector have shown the detection voltage of 20~500 mV to the RF input power of -45~-20 dBm. The proposed W-band detector can be applicable to the passive millimeter image system.

Technical analysis of frequency reallocation to FM broadcasting link system for effective use in 900 MHz band (900MHz 대역의 효율적 이용을 위한 FM 방송 링크 시스템 주파수의 재배치에 대한 기술적 분석)

  • Suh, Kyoung-Whoan;Lee, Joo-Hwan
    • Journal of Broadcast Engineering
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    • v.15 no.1
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    • pp.89-98
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    • 2010
  • In this paper, the technical analyzing methodology has been suggested to preserve the same transmission quality of a M/W system used for FM broadcasting link after the frequency reallocation. The simulation was also performed for the actual M/W system operating in each frequency band, and its results were evaluated in terms of an availability based upon a fade margin. It was confirmed that only if the relative fade margin of more than 2.6 dB at 1700 MHz is provided, the equivalent service quality may be obtained regardless of the frequency reallocation. The suggested method will be expected to be widely used for accessing service quality of the M/W system concerned with the frequency reallocation.

Characteristics of MHEMT Devices Having T-Shaped Gate Structure for W-Band MMIC (W-Band MMIC를 위한 T-형태 게이트 구조를 갖는 MHMET 소자 특성)

  • Lee, Jong-Min;Min, Byoung-Gue;Chang, Sung-Jae;Chang, Woo-Jin;Yoon, Hyung Sup;Jung, Hyun-Wook;Kim, Seong-Il;Kang, Dong Min;Kim, Wansik;Jung, Jooyong;Kim, Jongpil;Seo, Mihui;Kim, Sosu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.2
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    • pp.99-104
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    • 2020
  • In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

Requirements for 6 GHz Unlicensed Bands (6 GHz 비면허 대역 이용을 위한 기술기준)

  • Kang, Young-Heung
    • Journal of Advanced Navigation Technology
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    • v.24 no.5
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    • pp.415-422
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    • 2020
  • Federal Communications Commissions (FCC) has adopted a new rule that can provide a 1,200 MHz unlicensed spectrum to maximize the public benefits in the 5.925 ~ 7.125 GHz(6 GHz) band by expanding unlicensed broadband into the 6 GHz band while also ensuring that licensed services that operate in the band continue to thrive. In Korea, the M/W band of 6 GHz has been reallocated to introduce unlicensed services in the 6 GHz band. Considering the national interests, the entire 1,200 MHz will be supplied for the indoor uses, but only the 500 MHz of the lower bandwidth (5925 ~ 6425 MHz) will for the outdoor uses under the limited power to protect the incumbent services. The introduction of unlicensed devices is being actively promoted through the reallocation of the 6 GHz M/W band, but since it is desperately necessary to prepare technical requirements to operate them in Korea. In this paper, the US 6 GHz unlicensed rules has been analyzed, these results will be utilized for establishing Korean technical standards with the unlicensed spectrum expansion.

Klystron and Modulator Controller for L-band Industrial Accelerator System (L-band 산업용 가속기 RF 증폭기의 전원장치를 위한 제어기 개발)

  • Kwon, S.J.;Son, Y.G.;Jang, S.D.;Oh, J.S.;Cho, M.H.;NamKung, W.;Jung, K.H.;Lee, K.T.;Park, S.W.
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1468-1469
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    • 2007
  • 포항가속기 연구소에서는 RIS 프로젝트 사업과제의 일환인 L-band 산업용 전자빔 가속기의 제작 및 기술개발 연구를 철원의 물리기술연고소 주관으로 수행하고 있다. L-band 산업용 전자빔 가속기는 전자빔에 의한 고분자개질 공정, 농수산물의 멸균 및 의료기기의 멸균 등에 적용이 가능하다. 포항가속기연구소에서는 10 MeV급 산업용 전자빔 조사장치에 적용되는 RF증폭기용 펄스 전원장치인 모듈레이터를 설계, 제작을 하였다. 펄스 전원장치인 이 모듈레이터 시스템은 평균 출력 60 kW, 펄스폭 7 us, 펄스반복율 300 Hz의 L-band 상업용 RF 증폭기 전원장치이며, RF 증폭기로 사용되는 클라이스트론은 Thales 사의 TV2022D를 사용하였다. 본 논문에서는 펄스 전원장치인 모듈레이터의 운전과 인터록을 위한 제어장치의 개발과 제작에 대하여 논하고자 한다.

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Design and Fabrication of a W-band FMCW Radar for the Metal Target Detection Under the Ground Clutter Environment (지면 클러터 환경에서 금속표적감지를 위한 W-대역 FMCW 레이더의 설계 및 제작)

  • Park Jung-Dong
    • Journal of the Korea Institute of Military Science and Technology
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    • v.7 no.3 s.18
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    • pp.93-100
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    • 2004
  • In this paper, we describe the design, fabrication, and test results of a W-band FMCW radar for the metal target detection under the ground clutter environment. In order to detect metal targets on the ground, we used a single cassegrain antenna with the beamwidth of $1.45^{\circ}$ which forms pencil-beam footprint on the ground. A log envelope detector was applied to improve radar performance in the severe ground clutter known as Weibull and log normal clutter. The designed FMCW radar can acquire altitude information from the ground clutter with $\sigma_0=-23dB$ at the height of 160m. The fabricated W-band FMCW radar transmits 11 dBm power and the dynamic range of the receiver is from -106dBm to -30dBm. The performances of the fabricated sensors were tested out in the fields and detected a car target of 200m apart on the grass.