• Title/Summary/Keyword: Lsi2

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STUDY OF QUOTIENT NEAR-RINGS WITH ADDITIVE MAPS

  • Abdelkarim Boua;Abderrahmane Raji;Abdelilah Zerbane
    • Communications of the Korean Mathematical Society
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    • v.39 no.2
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    • pp.353-361
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    • 2024
  • We consider 𝒩 to be a 3-prime field and 𝒫 to be a prime ideal of 𝒩. In this paper, we study the commutativity of the quotient near-ring 𝒩/𝒫 with left multipliers and derivations satisfying certain identities on 𝒫, generalizing some well-known results in the literature. Furthermore, an example is given to illustrate the necessity of our hypotheses.

Variation of Leaflet Traits and Their Association with Agronomic Traits of Soybean Germplasm (콩 유전자원의 소엽형질 변이와 농업형질과의 관계)

  • Yeong Ho, Lee;Yung Kuang, Huang
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.42 no.5
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    • pp.640-646
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    • 1997
  • To determine variations in leaflet length (LL), leaflet width (LW), leaflet size (LS), and leaflet shape index (LSI), and their association with eight agronomic traits, characterization data of 884 soybean accessions which were grown in the autumn of 1992 in Taiwan were analyzed. LL ranged from 4.3 to 14.7 cm, and LW ranged from 2.8 to 9.7 cm. Also, LS (LL $\times$ LW) ranged from 12.1 to 124.6 $\textrm{cm}^2$. The absolute variation of LL, LW, and LS was not large because of limitation in vegetative growth by short day length. None was classified as a large leaflet based on the International Board for Plant Genetic Resources (IBPGR) descriptors. LSI (LL /LW) ranged from 1.21 to 3.06, and three accessions were classified as narrow leaflet. There were differences in ranges and means of LL, LW, LS, and LSI between and within temperate and tropical accessions. LL, LW, LS, and LSI had highly significant positive correlations with seven agronomic traits and highly significant negative correlation with 100-seed weight except LW for all accessions. There was variation in the closeness of association among leaflet traits, and between and within temperate and tropical accessions. Generally, LL, LW, and LS were more closely associated with days to flowering, plant height at $R_1$ and $R_8$, number of pods per plant; LSI was more closely associated with 100-seed weight than other traits.

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Noninvasive Depthwise Temperature Measurement in Skin Tissue Using Laser Speckle Imaging Technique (레이저 스펙클 이미징 기법을 이용한 피부 조직의 깊이 방향 비침습적 온도 측정)

  • Jakir Hossain Imran;Noemi Correa;Jung Kyung Kim
    • Journal of the Korean Society of Visualization
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    • v.22 no.2
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    • pp.74-81
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    • 2024
  • Accurate tissue temperature monitoring during clinical procedures, such as laser therapy or surgery, is crucial for ensuring patient safety and treatment efficacy. Noninvasive techniques are essential to prevent tissue disturbance while providing real-time temperature data. However, current methods often struggle to accurately measure temperature at various depths within the skin, which is essential to avoid damage to surrounding healthy tissues due to excessive heat. In response to this challenge, we developed a confocal imaging system that utilizes the laser speckle imaging (LSI) technique for precise depthwise temperature monitoring. LSI uses laser light scattering to capture subtle changes in speckle patterns on the skin's surface due to temperature fluctuations within the tissue. By analyzing these changes, LSI enables accurate depth-resolved temperature measurements. This technique enhances the precision and safety of medical procedures, offering significant potential for broader clinical applications, improved patient outcomes, and better thermal management during interventions.

A 15 nm Ultra-thin Body SOI CMOS Device with Double Raised Source/Drain for 90 nm Analog Applications

  • Park, Chang-Hyun;Oh, Myung-Hwan;Kang, Hee-Sung;Kang, Ho-Kyu
    • ETRI Journal
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    • v.26 no.6
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    • pp.575-582
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    • 2004
  • Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

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Random Forest Model for Silicon-to-SPICE Gap and FinFET Design Attribute Identification

  • Won, Hyosig;Shimazu, Katsuhiro
    • IEIE Transactions on Smart Processing and Computing
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    • v.5 no.5
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    • pp.358-365
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    • 2016
  • We propose a novel application of random forest, a machine learning-based general classification algorithm, to analyze the influence of design attributes on the silicon-to-SPICE (S2S) gap. To improve modeling accuracy, we introduce magnification of learning data as well as randomization for the counting of design attributes to be used for each tree in the forest. From the automatically generated decision trees, we can extract the so-called importance and impact indices, which identify the most significant design attributes determining the S2S gap. We apply the proposed method to actual silicon data, and observe that the identified design attributes show a clear trend in the S2S gap. We finally unveil 10nm key fin-shaped field effect transistor (FinFET) structures that result in a large S2S gap using the measurement data from 10nm test vehicles specialized for model-hardware correlation.

Linear and Circular Interpolation for 2-Dimensional Contouring Control (2次元 輪곽制御 를 위한 直線 및 圓통補間)

  • 이봉진
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.6 no.4
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    • pp.341-345
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    • 1982
  • The interpolator is usually built in hardware (logic circuitry), and the interpolator fabricated in a single LSI chip is recently made use of in most NC controllers, making the system more compact. However, the LSI interpolator not only has the technical difficulties but also requires high cost, in its fabrication. To solve these problems, we tried to find the method of interpolation by software, and succeeded in developing a program which, executed by INTEL's 8085 microprocessor, can distribute the input pulses of up to 4.0 [Kpps] for the linear interpolation and 3.0 [Kpps] for the circular interpolation. This paper presents the algorithm used to reduce the execution time and the flow chart of the interpolation program, and also shows the possibility of software interpolation. The interpolation program designed in assembly language is presented in the appendix.

Two-axis latera I-shearing interferometer for performance test of lenses using a Dove prism (도브 프리즘을 이용한 렌즈 성능평가용 2축 층밀리기 간섭계)

  • 김승우;이혁교;김병창
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1995.10a
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    • pp.384-387
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    • 1995
  • Two axes lateral-shearing interferometer(LSI) specially devised for production line inspection lenses is presented. The interferometer composed with four prisms and a dove prism can test the lens performance including asymmetric aspheric lens. The dove prism which rotates the input image with respect to optical axis makes it possible. The wavefront passing through the test lens is reconstsucted by the phase derivative obtained form the two axes LSI system. Zernike-polynomials fitting of this wavefront is presented for determinating quantitative aberration of aspherical lenses.

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Power Attack against an Exponent Blinding Method (Exponent Blinding 기법에 대한 전력 공격)

  • Kim Hyung-Sup;Baek Yoo-Jin;Kim Seung-Joo;Won Dong-Ho
    • Proceedings of the Korea Institutes of Information Security and Cryptology Conference
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    • 2006.06a
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    • pp.164-168
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    • 2006
  • 전력 공격은 암호화 연산 과정 중 발생하는 소비 전력의 파형을 측정하여 비밀 정보를 알아내는 공격 방식이다. 이러한 전력 공격에 대한 취약성을 막기 위하여 message blinding, exponent blinding과 같은 기법들이 적용되어 왔다. 본 고에서는 $ECC^{[1]}$암호화 연산 과정에서, r이 임의의 정수일 때, dP=(d-r)P+rP인 관계를 이용하는 exponent blinding기법$^{[2]}$에 대하여 언급하고, 위 기법을 전력 공격의 대응책으로 적용 시 적절히 구현되지 않으면 power attack에 대하여 매우 취약하다는 것을 보인다.

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Semiconductor magnetic field sensors (화합물 반도체 자기센서)

  • 차준호;김남영
    • Electrical & Electronic Materials
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    • v.9 no.5
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    • pp.512-517
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    • 1996
  • 본 고는 반도체 재료가 갖는 자기효과를 이용하여 자기센서의 종류 및 특성등에 대하여 서술하였다. 반도체 LSI의 응용분야가 확대됨에 따라서 반도체 센서를 이용한 극소형화, 고성능화, 저가격화, 다기능화등이 가능하게 되었다. 이러한 상황에서 반도체를 이용한 홀 소자나 자기저항 소자와 같은 자기센서 등을 주변회로와 일체화시킨 초소형 시스템에 대한 연구가 활발하다. 특히 화합물 반도체는 자기센서에 적합한 물리적인 특성을 갖고 있기 때문에, 자기센서로 효율을 나타내고 있다. 반도체의 미세가공기술의 발전과 LSI제조기술의 발전을 이용하여 센서의 집적화, 저가격화를 가능하게 하였으며, 다른 종류의 반도체 센서들을 자기센서와 함께 하나의 칩위에 장착할 수 있는 응용집적센서(Application-specific Integrated Sensor)가 더욱 중요한 역할을 할 것이다.

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