• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1282-1284
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• 1998

ZnO Varistor is an electronic ceramic device for controlling the surge voltage from low level to high. In this study, the puncture mechanism occurring in ZnO varistor is investigated, and the simulation for restraining the puncture by formulating the relation between the applied voltage and the increase of the inside temperature of grain is applied. In order to simulate the cause of the current localization which is the primary factor causing the puncture, the localization phenomenon and the temperature distribution induced by the localized current, the Voronoi network is applied, which can realize the structure of the practical varistor better than the established simple network. Using the current through each grain and the voltage applied to the grain boundary obtained from that simulation, the Joule heating energy is calculated and the phenomenon that the puncture occurs can be analyzed quantitatively by simulating the electric and thermal characteristics according to the externally applied pulsed voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.876-881
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• 2011

The sintering, defect and grain boundary characteristics of Bi-based ZnO chip varistor (1,608 mm size) have been investigated to know the possibility of lowering a manufacturing price by using 100 % Ag inner-electrode. The samples were prepared by general multilayer chip varistor process and characterized by shrinkage, SEM, current-voltage (I-V), admittance spectroscopy (AS), impedance and modulus spectroscopy (IS & MS) measurement. There are no problems to make a chip varistor with 100% Ag inner-electrode in the sintering temperature range of 850~900$^{\circ}C$ for 1 h in air. A good varistor characteristics ($V_n$= 9.3~15.4 V, a= 23~24, $I_L$= 1.0~1.6 ${\mu}A$) were revealed but formed $Zn_i^{{\cdot}{\cdot}}$(0.209 eV) as dominant defect, and increased the distributional inhomogeneity and the temperature instability in grain boundary barriers.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.8
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• pp.1211-1216
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• 1989

To enhance the breakdown properties of low voltage-oriented ZnO varistor, sample were fabricated with additive oxides and sintering conditions. Addition of TiO2 lowered breakdown voltage` nonlinear resistances were lowered about 10V/mm and nonlinear exponents were not lowered with respect to it with the basic composition. To the samples added TiO2, V2ko5, and Cr2O3, microstructures were observed by SEM, moreover Ti was detected at grainboundaries and within the grain by EDS. Addition of Si-oxides and Sb2O3 increased nonlinear exponent and also increased nonlinear resistance, by addition of TiO2 to these samples at the sintering conditions of 1250\ulcorner and 1 hour we could fabricate low voltage-oriented ZnO varistors with nonlinear exponent of 30 or more and with real breakdown voltage of 30V/mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1158-1161
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• 2004

This paper presents structural characteristics of station class lightning arresters and electrical characteristics of manufactured ZnO varistor blocks which are usable in those arresters. Three types of station class lightning arresters were investigated and those are a ceramic arrester, a FRP tube type polymer arrester, and a FRP rod type polymer arrester. Each arrester has merits and demerits with structural characteristics. In general, polymer arresters were made of silicon rubber for housing materials, FRP tube or rod for mechanical strength, ZnO blocks for electrical characteristics, and metal parts for electrical contact and the silicon rubber, the housing materials, was directly injected to the arrester module which was assembly composed of electrodes, ZnO blocks and FRP tube or rod, and to prevent the nonlinear electric fields distribution on upper parts of arresters, the grade ring was adopted to the upper electrodes. The reference voltage, nonlinear coefficient, residual voltage, and voltage ratio of manufactured ZnO varistors are 4.90kV, 50, 9.54kV, 1.94, respectively. Compared to designed electrical characteristics, the reference voltage was low for 600v and the voltage ratio was slightly high. However, the characteristics of discharge withstand was so excellent that the mechanical destruction does not occur at the impulse current of $8/20{\mu}s$ 10kA for 100 times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.40-43
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• 1991

The low-voltage ZnO varistor fabricated by a new method with three-composition seed grain are studied. The knee voltage about 5V$\_$0.5[A/$\textrm{cm}^2$]/ for sample #7 among the various samples are observed, and activation energy in the obmic region and trap level in the double sohottky region for each samples are 0.359∼0.450eV and 0.553∼0.620eV, respectively. It is concluded that the change of knee voltage may be caused by trap level in double sohottky region rather than activation energy in the ohmic region.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.466-471
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• 1987

We investgated I-V cahracteristics and relationship between microstructures and electrical properties in the specimens fabricated by seed grain method for low voltage Zn O varistor. Breaksown voltage was mainly dependent on seed grain size, and could be cntrolled to 10V/mm -15V/mm by sintering temperature and time. In non-seed grain method breakdown voltage generally agreed with final grain size, but did not always agree with it by the change of barrier phase distribution in case of the method using seed grains.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.95-100
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• 1990

We fabricated primary and secondary seed grains. Primary seed grains having larger grain size were obtained under the conditions that were 2.0mol.% $BaCO_3$ and 10 hours sintering. The amount of primary seed grain that yield the largest secondary seed grain was chosen as 3wt.% and we fabricated the low voltage varistors which were jointed the low voltage-oriented ZnO varistor system made by conventional method with the secondary seed grains. As a result, the ZnO varistors under those conditions showed approximately 10V/mm of nonlinear resistance and 15-22 of nonlinear exponent.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.40-47
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• 1995

Electrical properties of ZnO ceramics based on Bi oxide was investigated in relation to sintering temperature. In the temperature range >$1150^{\circ}C$ to >$1350^{\circ}C$ the grain size increased from 9.mu.m to 20.mu.m when the sintering temperature was raised. The leakage current in the low voltage range increased as the potential barrier decreases, which is caused by increasing the grain size at high temperature. The dielectric characteristics of the ZnO ceramics was also affected by sintering temperature. Large dielectric constant was attributed, to the grainboundary layer of polycrystalline ZnO ceramics and decreasing grainboundary width. The variation of breakdown voltage with sintering temperature was attributed to the change of the donor concentration in the ZnO grain and grain size. The results showed that breakdown voltage increased decreasing grain size and donor concentration. Nonohmic coefficient was associated with the lower breakdown voltage per grainboundary layer due to the grain growth and higher donor concentration.

• 전기의세계
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• v.31 no.6
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• pp.445-449
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• 1982

This Paper describes the influence of additive concentrations and sintering temperature on the surge protection performance in ZnO ceramic varistors. It is found from the experiments that the metal-oxide semiconductors based oi ZnO with an additive incorporation of 0.50% molx(Bi$\_$2/O$\_$3/+MnO+CoO+Cr$\_$2/O$\_$3/+2Sb$\_$2/O$\_$3/) and sintered at 1250.deg. C present excellent V-I characteristics in view of transient surge suppression. Gapless arrester element with aluminum electrodes shows also good reliability against impulse shock and marks a low voltage clamping ratio(V$\_$1KA/V$\_$1mA/<2.0) compared with the conventional SiC varistors.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1275-1281
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• 1997

ZnO varistors containing 5.0 at% Co3O4 and Pr6O11, ranging from 0.1 to 1.0 at%, were sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$. The I-V characteristics and nonlinear coefficients of the specimens were investigated with respect to Pr addition and sintering temperature. In general the specimens sintered at 130$0^{\circ}C$ showed better varistor characteristic than those fired at 135$0^{\circ}C$, which seemed to be related with the liquid phase formation during sintering. The barrier heights obtained from C-V relations, 0.29-1.36 eV, were different from those acquired using resistivity-temperature plots measured at low voltage per grain boundary. Therefore the estimation of potential barrier heights using C-V relations is better suited for the specimens prepared in this study. The carrier densities obtained using C-V relations were ~1018 cm-3.