Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Properties of Zn O Varistor Fabricated by Seed Grain Method

Seed Grain 방법에 의해 제작된 ZnO Varistro의 특성

  • Kwon, Oh Kyung (Dept. of Materials Eng., Hanyang Univ.) ;
  • Mah, Jae Pyung (Dept. of Materials Eng., Hanyang Univ.) ;
  • Paek, Su Hyon (Dept. of Materials Eng., Hanyang Univ.)
  • 권오경 (한양대학교 재료공학과) ;
  • 마재평 (한양대학교 재료공학과) ;
  • 백수현 (한양대학교 재료공학과)
  • Published : 1987.03.01
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Abstract

We investgated I-V cahracteristics and relationship between microstructures and electrical properties in the specimens fabricated by seed grain method for low voltage Zn O varistor. Breaksown voltage was mainly dependent on seed grain size, and could be cntrolled to 10V/mm -15V/mm by sintering temperature and time. In non-seed grain method breakdown voltage generally agreed with final grain size, but did not always agree with it by the change of barrier phase distribution in case of the method using seed grains.

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