• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.6
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• pp.986-991
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• 1987

To establish the basic composition of low voltage varistor and to find the role of each compont in detail, we investigated the electrical properties and the microstructures. As a result, ZnO 1.0m/oBi2O3-1.0m/oCo2kO3-0.2m/oMnO2 system was optimum for low voltage varisor. We found that Bi2o3 promotes grain growth of ZnO and that Co2O3 doped in ZnO grain lowers the nonlinear resistance and MnO2 mainly existed near the ZnO grainboundary elevates nonlinear resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.120-124
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• 2004

The protection performance and energy absorption capability are important for both MOAs for distribution lines and MOAs for high voltage systems, therefore the manufacturing technique of ZnO varistor elements with high ability against surge impacts is great important for high voltage systems. But until now ZnO varistors for low voltage class have been developed in Korea, ZnO varistors with the rate discharge current of 5, 10kA class for high voltage systems depend on an import from advanced countries, such as Japan or U.S.A, which have developed its in the late 1980s. So in the aspect of taking independent technique the development of ZnO varistors with the rate discharge current of 5, 10kA class for high voltage systems is important. In this research project ZnO varistor elements with diameters of 35mm and 70mm for the rate discharge current of 5, 10kA class for high voltage systems are manufactured, then various chemical composition and processing variables affected the electrical and the physical characteristics of these ZnO varistors are investigated.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.553-555
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• 1987

In the standard system of low voltage-oriented ZnO varistor,a small amount of $Sb_2O_3$ was added to improve the nonlinear exponent and then to find the variation of breakdown characteristics, 0.1m/o-SiO and 0.1m/o-$TiO_2$, respectively,were added We considered relationship between the breakdown voltage of systems and the microstructure. We found that the system containing 0.1m/o-$Sb_2O_3$ showed very high nonlinear exponent. And we found that SiO enhanced breakdown voltage and $TiO_2$ lowered it.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.149-153
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• 1997

ZnO varistor based on ZnO-Bi2O3-Co3O4-MnCO3-Cr2-O3-Sb2O3 system with Sb2O3 contents were studied for grain size variation and microstructure properties. The composition of pure ZnO varistor was observed composition was inhibited owing to formation of Zn7Sb2O12 spinel phase and did not observed abnrmal grain growth. With Sb2O3 contents, the grain sizes of ZnO varistor were remarkably decreased and the microstructure had the distribution of dense and homogeneous grains.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1495-1497
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• 1998

The effects of lanthania on the microstructure and electrical characteristics of Pr-based ZnO varistors were investigated. The average grain size was increased in the range of 21.9$\sim$56.3${\mu}m$ with increasing lanthania content(0.0$\sim$2.0mol%). La was largely segregated at the grain boundary. As lanthania content increases, threshold voltage and nonlinear coefficient were decreased and leakage current was increased. In particular 2.0mol% lanthania-added varistor exhibited low threshold, voltage 17.0V/mm and nonlinear coefficient of around 6. Based on these results, this varistor can be said to be used as low-voltage varistor, if nonlinear coefficient is somewhat improved forward.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.355-359
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• 2006

ZnO varistor and GDT(gas discharge tube) have proven to be good protective devices because of their flexibility and high reliability. ZnO varistors are characterized by their excellent nonlinear properties. GDTs are used for applications in communication or signaling circuits because they have very low capacitance. Therefore, It is very important to understand the V-I characteristic of ZnO varistor and GDT for designing SPD to protect apparatus or personnel from high transient voltage. This paper gives experimental V-I characteristic data of ZnO varistor and GDT for protecting electronic equipments from surge up to maximum discharge current.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.556-560
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• 1987

To enhance the breakdown properties of low voltage-oriented ZnO varistor, the samples were fabricated with the amounts of si-oxides and the sintering conditions. And then, to lower the breakdown voltage the $TiO_2$-added samples were fabricated. We investigated the nonlinear exponent, the nonlinear resistance and the V-I characteristics of samples. And we discussed with microstructures by use of SEM and the position of Si by EDS. Si-oxides, especially, largely enhanced the nonlinear exponent. In this case optimum sintering condition was $1200-1250^{\circ}C$-1hr and $TiO_2$ addition lowered the breakdown voltage.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.2
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• pp.78-85
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• 2012

Low-Voltage power lines should equip surge protection devices which protect electronic equipments and human lives against lightning and abnormal voltages. Data transmission capacity of the power line is determined by frequency characteristics of the surge protective devices. To analyze the effects of surge protective devices on the data transmission performance, various combinations of installation methods are tested which include ZnO varistor elements that is compatible with class I, class II and class III. The result claims that ZnO varistor for class III is found to be one of the main factors that deteriorates the transmission performance. To overcome this problem a serial connection methed between Gap type SPD and ZnO varistor is proposed. With the proposed scheme, laboratory experimental results show that the data transmission performance can be improved up to 91.9[%] with proper SPD combination.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.214-220
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• 1998

ZnO varistors are characterized by the features of excellent nonlinearity and surge withstand capability. In this paper, in order to investigate the use of ZnO varistor as surge absorption device in low voltage, metal oxide material($TiO_2$) was selected as control material of grain growth. Samples of ZnO varistors were fabricated with varying the contents, and then the microstructures and V-I characteristics were measured. It was observed by SEM that the mean grain size increased with the increase of the additive. From the measurement of V-I characteristics, it was observed that according to the increase of the quantity of $TiO_2$ as additive, the operating voltage was lowered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.263-266
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• 1998

ZnO varistors have an excellent non-linearity and a large surge-energy absorption capability. For these reasons, the ZnO varistors are widely used to protect electrical/electronic circuits from an abnormal surge and/or noise signal. In order to obtain the low-voltage varistor with randomly distributed large seed grain within bulk, the ZnO varistors are made by a new three-composition seed grain method. And a conduction mechanism of varistors, which was observed in the temperature range of 30 ∼ 120$^{\circ}C$ and at the current range of 10$\^$-8/∼10$^2$ A/cm$^2$, was classified by the three regions of different mechanism when the current was increased.