• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Journal of the Korean Society of Radiology
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• v.13 no.6
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• pp.831-840
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• 2019

The X-ray detector by liquid crystal with front light was proposed and verified by a X-ray image. The proposed detector utilizes the visible light instead of the electric signal by transistor. Therefore, it shows low noise and can be fabricated at low cost. The liquid crystal detector uses the orientation change of the liquid crystal molecule by conductivity change of the photoconductive layer. We can get the X-ray image from the transmitted light through the liquid crystal. The X-ray dose was calibrated from the measured transmittance of the visible light after comparison to the reference transmittance curve of the liquid crystal. The amorphous Se was used for photo con ducting layer and parylene was used for the liquid crystal alignment instead of the conventional alignment layer which needs high-temperature process over 200℃. The proposed X-ray detector can decrease the X-ray dose by high sensitivity which was verified by simulation. After the fabrication of the X-ray detector, the X-ray image was obtained as a function of the bias voltage to the liquid crystal. 10 lines/mm resolution was obtained from the line pattern and we will apply it to the 17inch diagonal liquid crystal X-ray detector with 3π retardation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.755-758
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• 2014

In this paper, we propose effective Deblocking Filter hardware architecture for High Efficiency Video Coding encoder. we propose Deblocking Filter hardware architecture with less processing time, filter ordering for low area design, effective memory architecture and four-pipeline for a high performance HEVC(High Efficiency Video Coding) encoder. Proposed filter ordering can be used to reduce delay according to preprocessing. It can be used for realtime single-port SRAM read and write. it can be used in parallel processing by using two filters. Using 10 memory is effective for solving the hazard caused by a single-port SRAM. Also the proposed filter can be used in low-voltage design by using clock gating architecture in 4-pipeline. The proposed Deblocking Filter encoder architecture is designed by Verilog HDL, and implemented by 100k logic gates in TSMC $0.18{\mu}m$ process. At 150MHz, the proposed Deblocking Filter encoder can support 4K Ultra HD video encoding at 30fps, and can be operated at a maximum speed of 200MHz.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.29 no.2
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• pp.185-194
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• 2019

Objective: This study was conducted to investigate the intensity of the extremely low frequency magnetic fields(ELF-MF) generated inside of the cabins during subway operation. Methods: The ELF-MF intensity were investigated on 30 subway lines in Korea, including in the Greater Seoul Metropolitan Area(Seoul and Gyeonggi-do Province), Incheon, Busan, Daegu, Daejeon, and Gwangju. ELF-MF intensity was measured at 0.9 m from the floor using EMDEX II meters with a resolution of $0.01{\mu}T$. All data were collected every three seconds and analyzed with EMCALC 2013 version 3.0B software. Basic characteristics of subway operation, including alternative current(AC) or direct current(DC), voltage level, and opening year of the line were investigated. Real-time information during measurement, such as the time of departure, moving and arrival of trains, were also recorded. Results: The arithmetic mean(AM) and maximum(Max) intensity of ELF-MF were $0.62{\mu}T$ and $11.51{\mu}T$, respectively. Compared by region, the ELF-MF intensity measured inside cabin were the highest in the Seoul Metropolitan Area($AM=0.80{\mu}T$), followed by Busan($AM=0.30{\mu}T$), Daegu($AM=0.29{\mu}T$), Incheon($AM=0.14{\mu}T$), Gwangju($AM=0.04{\mu}T$) and Daejeon($AM=0.03{\mu}T$). The average ELF-MF level measured in AC trains($AM=1.36{\mu}T$) was also significantly higher than in DC trains($AM=0.28{\mu}T$). In terms of the opening year of the subway, trains opened before 1990($AM=0.85{\mu}T$) was the highest and the lowest was 2000-2009($AM=0.24{\mu}T$). Conclusions: The AC supply has the greatest influence on the generation of the ELF-MF intensity in subway cabins.

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.271-279
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• 2020

Non-ferrous metals, widely used in the mechanical industry, are difficult to machine, particularly by drilling and tapping. Since non-ferrous metals have a strong tendency to adhere to the cutting tool, the tool life is greatly deteriorated. Diamond-like carbon (DLC) is one of the promising candidates to improve the performance and life of cutting tool due to their low frictional property. In this study, a sacrificial DLC layer is applied on the hard nitride coated drill tool to improve the durability. The DLC coatings are fabricated by controlling the acceleration voltage of the linear ion source in the range of 0.6~1.8 kV. As a result, the optimized hardness(20 GPa) and wear resistance(1.4 x 10-8 ㎣/N·m) were obtained at the 1.4 kV. Then, the optimized DLC coating is applied as an sacrificial layer on the hard nitride coating to evaluate the performance and life of cutting tool. The Vickers hardness of the composite coatings were similar to those of the nitride coatings (AlCrN, AlTiSiN), but the friction coefficients were significantly reduced to 0.13 compared to 0.63 of nitride coatings. The drilling test were performed on S55C plate using a drilling machine at rotation speed of 2,500 rpm and penetration rate of 0.25 m/rev. The result showed that the wear width of the composite coated drills were 200 % lower than those of the AlCrN, AlTiSiN coated drills. In addition, the cutting forces of the composite coated drills were 13 and 15 % lower than that of AlCrN, AlTiSiN coated drills, respectively, as it reduced the aluminum clogging. Finally, the application of the DLC sacrificial layer prevents initial chipping through its low friction property and improves drilling quality with efficient chip removal.

• Applied Chemistry for Engineering
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• v.33 no.1
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• pp.58-63
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• 2022

Graphite has been used as an anode material for lithium-ion batteries for the past 30 years due to its low de-/lithiation voltage, high theoretical capacity of 372 mAh/g, low price, and long life properties. Recently, all-solid-state lithium-ion batteries (ASSLB), which are composed of inorganic solid materials with high stability, have received great attention as electric vehicles and next-generation energy storage devices, but research works on graphite that works well for ASSLB systems are insufficient. Therefore, we induced the performance improvement of ASSLB anode electrode graphite material by removing the amorphous carbon present in the carbon material surface, acting as a resistive layer from the graphite. As a result of X-ray diffraction (XRD) analysis using heat treated graphite in air at 400, 500, and 600 ℃, the full width at half maximum (FWHM) at (002) peak was reduced compared to that of bare graphite, indicating that the crystallinity of graphite was improved after heat treatment. In addition, the discharge capacity, initial coulombic efficiency (ICE) and cycle stability increased as the crystallinity of graphite increased after heat treatment. In the case of graphite annealed in air at 500 ℃, the high capacity retention rate of 331.1 mAh/g and ICE of 86.2% and capacity retention of 92.7% after 10-cycle measurement were shown.

• Journal of the Korean institute of surface engineering
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• v.56 no.6
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• pp.412-419
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• 2023

Anion exchange membrane electrolysis is considered a promising next-generation hydrogen production technology that can produce low-cost, clean hydrogen. However, anion exchange membrane electrolysis technology is in its early stages of development and requires intensive research on electrodes, which are a key component of the catalyst-system interface. In this study, we optimized the pressure conditions of the hot-pressing process to manufacture cobalt oxide electrodes for the development of a high uniformity and high adhesion electrode production process for the oxygen evolution reaction. As the pressure increased, the reduction of pores within the electrode and increased densification of catalytic particles led to the formation of a uniform electrode surface. The cobalt oxide electrode optimized for pressure conditions exhibited improved catalytic activity and durability. The optimized electrode was used as the anode in an AEMWE single cell, exhibiting a current density of 1.53 A cm^-2 at a cell voltage of 1.85 V. In a durability test conducted for 100 h at a constant current density of 500 mA cm^-2, it demonstrated excellent durability with a low degradation rate of 15.9 mV kh^-1, maintaining 99% of its initial performance.

• Progress in Medical Physics
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• v.18 no.3
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• pp.134-138
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• 2007

The current PET/CT system with high quality CT images not only increases diagnostic value by providing anatomic localization, but also shortens the acquisition time for attenuation correction than primary PET system. All commercially available PET/CT system uses the CT scan for attenuation correction instead of the transmission scan using radioactive source such as $^{137}Cs,\;^{68}Ge$. However the CT scan may substantially increase the patient dose. The purpose of this study was to evaluate quality of PET images reconstructed by CT attenuation map using various tube currents. in this study, images were acquired for 3D Hoffman brain phantom and cylindrical phantom using GE DSTe PET/CT system. The emission data were acquired for 10 min using phantoms after injecting 44.03 MBq of $^{18}F-FDG$. The CT images for attenuation map were acquired by changing tube current from 10 mA to 95 mA with fixed exposure time of 8 sec and fixed tube voltage of 140 kVp. The PET images were reconstructed using these CT attenuation maps. Image quality of CT images was evaluated by measuring SD (standard deviation) of cylindrical phantom which was filled with water and $^{18}F-FDG$ solution. The PET images were evaluated by measuring the activity ratio between gray matter and white matter in Hoffman phantom images. SDs of CT images decrease by increasing tube current. When PET images were reconstructed using CT attenuation maps with various tube currents, the activity ratios between gray matter and white matter of PET images were almost same. These results indicated that the quality of the PET images using low dose CT data were comparable to the PET images using general dose CT data. Therefore, the use of low dose CT is recommended than the use of general dose CT, when the diagnostic high quality CT is not required. Further studies may need to be performed for other system, since this study is limited to the GE DSTe system used in this study.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.75-85
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• 2009

This work proposes a 13b 100MS/s 0.13um CMOS ADC for 3G communication systems such as two-carrier W-CDMA applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs a four-step pipeline architecture to optimize power consumption and chip area at the target resolution and sampling rate. Area-efficient high-speed high-resolution gate-bootstrapping circuits are implemented at the sampling switches of the input SHA to maintain signal linearity over the Nyquist rate even at a 1.0V supply operation. The cascode compensation technique on a low-impedance path implemented in the two-stage amplifiers of the SHA and MDAC simultaneously achieves the required operation speed and phase margin with more reduced power consumption than the Miller compensation technique. Low-glitch dynamic latches in sub-ranging flash ADCs reduce kickback-noise referred to the differential input stage of the comparator by isolating the input stage from output nodes to improve system accuracy. The proposed low-noise current and voltage references based on triple negative T.C. circuits are employed on chip with optional off-chip reference voltages. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.70LSB and 1.79LSB, respectively. The ADC shows a maximum SNDR of 64.5dB and a maximum SFDR of 78.0dB at 100MS/s, respectively. The ABC with an active die area of $1.22mm^2$ consumes 42.0mW at 100MS/s and a 1.2V supply, corresponding to a FOM of 0.31pJ/conv-step.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.