• 한국세라믹학회지
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• 제38권5호
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• pp.405-411
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• 2001

Compacts of a mixture of fine $\alpha$-Si$_3$N$_4$powders, 6% $Y_2$O$_3$and 1% $Al_2$O$_3$were attrition milled time on phase and microstructural development in silicon nitride ceramics. The sintered surface and the interior showed different behaviors in phase and microstructral developments. Increased oxygen content with increased milling time of powder mixture leads to the formation of Si$_2$$N_2$O phase at temperatures as low as 155$0^{\circ}C$. Si$_2$$N_2$O is stable in the interior of the samples but unstable in the surface region of the specimen sintered at higher temperature. This results in a duplex structure where the interior consists of Si$_2$$N_2$O grains dispersed in $\beta$-Si$_3$N$_4$matrix and a surface which contains only $\beta$-Si$_3$N$_4$. The alpha to beta phase transformation and the microstructural development are shown to be influenced by the formation and decomposition of the Si$_2$$N_2$O.

• 대한금속재료학회지
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• 제49권12호
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• pp.967-976
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• 2011

Conventional fracture tests of resistance spot welds have been performed without consideration of the paint baking process in the automobile manufacturing line. The aim of this paper is to investigate the effect of the paint baking process on load carrying capacity and fracture mode for resistance spot welded 590 dual phase (DP), 780DP, 980DP, 590 transformation in duced plasticity (TRIP), 780TRIP and 1180 complex phase (CP) steels. With paint baking after resistance spot welding, the l-shape tensile test (LTT) and nano-indentation test were conducted on the as-welded and paint baked samples. Paint baking increased the load-carrying capacity of the resistance spot welded samples and improved the fracture appearance from partial interfacial fracture (PIF) to button fracture (BF). Improvement in fracture appearance after LTT is observed on weldments of 780 MPa grade TRIP steels, especially in the low welding current range with paint baking conditions. The higher carbon contents (or carbon equivalent) are attributed to the low weldability of the resistance spot welding of high strength steels. Improvement of the fracture mode and load carrying ability has been achieved with ferrite hardening and carbide formation during the paint baking process. The average nano-indentation hardness profile for each weld zone shows hardening of the base metal and softening of the heat affected zone (HAZ) and the weld metal, which proves that microstructural changes occur during low temperature heat treatment.

• Nano
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• 제13권10호
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• pp.1850124.1-1850124.12
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• 2018

$TiO_2$ films were deposited from oxygen/titanium tetraisopropoxide (TTIP) plasmas at low temperature by Helicon-PECVD at floating potential ($V_f$) or substrate self-bias of -50 V. The influence of titanium precursor partial pressure on the morphology, nanostructure and optical properties was investigated. Low titanium partial pressure ([TTIP] < 0.013 Pa) was applied by controlling the TTIP flow rate which is introduced by its own vapor pressure, whereas higher titanium partial pressure was formed through increasing the flow rate by using a carrier gas (CG). Then the precursor partial pressures [TTIP+CG] = 0:027 Pa and 0.093 Pa were obtained. At $V_f$, all the films exhibit a columnar structure, but the degree of inhomogeneity is decreased with the precursor partial pressure. Phase transformation from anatase ([TTIP] < 0.013 Pa) to amorphous ([TTIP+CG] = 0:093 Pa) has been evidenced since the $O^+_2$ ion to neutral flux ratio in the plasma was decreased and more carbon contained in the film. However, in the case of -50 V, the related growth rate for different precursor partial pressures is slightly (~15%) decreased. The columnar morphology at [TTIP] < 0.013 Pa has been changed into a granular structure, but still homogeneous columns are observed for [TTIP+CG] = 0:027 Pa and 0.093 Pa. Rutile phase has been generated at [TTIP] < 0:013 Pa. Ellipsometry measurements were performed on the films deposited at -50 V; results show that the precursor addition from low to high levels leads to a decrease in refractive index.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2009년도 제33회 추계학술대회논문집
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• pp.453-456
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• 2009

복합재료 구조물의 충격 특성을 향상시키기 위해 형상기억합금을 삽입한 복합재료 평판의 충격실험을 수행하였다. 형상기억합금은 일반 금속 재료에 비해 큰 극한 변형율과 강도를 가질 뿐 아니라 변형시에 상변화를 통해서 많은 변형에너지를 흡수할 수 있는 특징을 가진다. 이러한 형상기억합금을 복합재료에 삽입하여 충격에 약한 복합재료의 충격 저항성을 향상시키기 위한 연구를 수행하였다. 먼저 여러 온도에서 형상기억합금의 인장실험을 수행하여 형상기억합금의 열-기계학적 특성을 파악하였다. 이후 형상기억합금, 철, 알루미늄 선을 삽입한 복합재료 평판의 충격 실험을 통하여 보강재에 따른 충격 특성을 파악하였다. 또한 형상기억합금의 두께 방향으로의 삽입위치에 따른 충격 특성을 파악하였다.

• 한국광물학회지
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• 제27권2호
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• pp.73-83
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• 2014

마이크로웨이브 가열에 의하여 선택적으로 상변환을 일으키는 Au를 함유하는 황화광물을 조사하기 위하여 현미경과 SEM-EDS 분석을 수행하였으며 그리고 이에 따른 최대 Au 용출인자를 결정하기 위하여 티오시안산염 용출실험을 수행하였다. 비-가시성 Au를 함유하는 황화광물을 마이크로웨이브에 노출시킨 결과, 노출시간이 증가할수록 온도와 무게감소가 증가하였다. 이 황화광물 중 마이크로웨이브 가열에 가장 빠르게 선택적으로 상변환 된 광물은 황비철석이었다. 황비철석이 적철석으로 상변환되었으며, 상변환은 동심원적과 가장자리구조로 형성되었다. 또한 상변환 된 부분에서 O와 C가 검출되었으며, 일정하게 Fe 함량은 높게 그리고 As 함량은 낮게 나타났다. 이와 같은 결과는 마이크로웨이브 가열에 의한 arcing과 산화작용이 일어났기 때문이다. 마이크로웨이브에 35분 노출시킨 시료를 티오시안산염 용출실험에 적용하여 Au가 최대로 용출되는 조건은 0.5 g의 티오시안산나트륨 농도, 2.0 M의 염산 농도, 0.3 M의 황산구리 농도 그리고 용출온도$60^{\circ}C$에서였다. 최대 Au 용출 조건을 마이크로웨이브 처리 시료에 적용했을 때 Au 용출률이 59%에서 96.96%로 나타났지만 마이크로웨이브에 처리하지 않은 시료에서는 겨우 24.53%에서 92%로 나타났다.

• 한국재료학회지
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• 제32권5호
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• pp.264-269
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• 2022

Ti₃C₂T_x MXene, which is a representative of the two-dimensional MXene family, is attracting considerable attention due to its remarkable physicochemical and mechanical properties. Despite its strengths, however, it is known to be vulnerable to oxidation. Many researchers have investigated the oxidation behaviors of the material, but most researches were conducted at high temperatures above 500 ℃ in an oxidation-retarding environment. In this research, we studied changes in the structural and electrical properties of Ti₃C₂T_x MXene induced by low-temperature heat treatments in ambient conditions. It was found that a number of TiO₂ particles were formed on the MXene surface when it was mildly heated to 200 ℃. Heating the material to higher temperatures, up to 400 ℃, the phase transformation of Ti₃C₂T_x MXene to TiO₂ was accelerated, resulting in a TiO₂/Ti₃C₂T_x hybrid. Consequently, the metallic nature of pure Ti₃C₂T_x MXene was transformed to semiconductive behavior upon heat-treating at ≥ 200 ℃. The results of this research clearly demonstrate that Ti₃C₂T_x MXene may be easily oxidized even at low temperatures once it is exposed to air.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.426.2-426.2
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• 2016

Numerous of researches are being conducted to improve the efficiency of $Cu_2ZnSnSe_4$ (CZTSe)-based photovoltaic devices, which is one of the most promising candidates for low cost and environment-friendly solar cells. In this work, we concentrate on the back contact of the devices. A proper thickness of $MoSe_2$ in back contact structure is believed to enhance adhesion and ohmic contact between Mo back contact and absorber layer. Nevertheless, too thick $MoSe_2$ layers that are grown during high-temperature selenization process can impede the current collection, thus resulting in low cell performance. By applying molybdenum nitride as a barrier in back contact structure, we were able to control the thickness of $MoSe_2$ layer, which resulted in lower series resistance and higher fill factor of CZTSe devices. The phase transformation of Mo-N binary system was systematically studied by changing $N_2$ concentration during the sputtering process. With a proper phase of Mo-N fabricated by using an adequate partial pressure of $N_2$, the efficiency of CZTSe solar cells as high as 8.31% was achieved while the average efficiency was improved by about 2% with respect to that of the referent cells where no barrier layer was employed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.215-216
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• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• 대한금속재료학회지
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• 제47권5호
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• 대한금속재료학회지
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• 제46권3호
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• pp.159-168
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• 2008

Thermally-evaporated 10 nm-Ni/1 nm-Ru/(30 nm or 70 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Ru-inserted nickel monosilicide. The silicide samples underwent rapid thermal anne aling at $300{\sim}1,100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution X-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope(SPM) were used to determine the cross-sectional structure and surface roughness. The silicide, which formed on single crystal silicon and 30 nm polysilicon substrate, could defer the transformation of $Ni_2Si $i and $NiSi_2 $, and was stable at temperatures up to $1,100^{\circ}C$ and $1,100^{\circ}C$, respectively. Regarding microstructure, the nano-size NiSi preferred phase was observed on single crystalline Si substrate, and agglomerate phase was shown on 30 nm-thick polycrystalline Si substrate, respectively. The silicide, formed on 70 nm polysilicon substrate, showed high resistance at temperatures >$700^{\circ}C$ caused by mixed microstructure. Through SPM analysis, we confirmed that the surface roughness increased abruptly on single crystal Si substrate while not changed on polycrystalline substrate. The Ru-inserted nickel monosilicide could maintain a low resistance in wide temperature range and is considered suitable for the nano-thick silicide process.