• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.278-278
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• 2007

Ag conductive thick film has been used in bus and address electrodes of PDP (Plasma display panel). In PDP fabrication, the firing temperature of electrode is normally $550{\sim}580^{\circ}C$. For the application of PDP industry, we investigated an Ag conductive thick film with firing temperature. Low melting glass frit was used in the conductive thick film. The thermal properties of Ag and frit were determined by a hot stage microscopy. Based on the our results, we suggest that the Ag conductive thick film should be considered of the firing temperature which is correlated to the shrinkage, conductivity, and shape of thick film.

• Current Photovoltaic Research
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• 제3권1호
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• pp.1-4
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• 2015

In this study, we analyzed the correlation between mechanical and electrical properties of low-temperature conductive film (LT-CF) bonded silicon solar cells by a quadrant analysis (horizontal axis (peeling strength), vertical axis (power loss)). We found that a series of points with various bonding parameters such as bonding temperature, pressure and time were distributed in the different three regimes; weak regime (Q2: weak bonding strength and high power loss), moderate regime (Q4 : strong bonding strength and low power loss) and hard regime (Q3 : weak bonding strength and low power loss). Using this analogous technique, it was possible to fabricate the LT-CF bonded silicon solar cells with the various conditions displayed in Q3 of the quadrant plots, possessing the peeling strength of ~ 1N/mm and power loss of 2~3%.

• Current Photovoltaic Research
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• 제2권3호
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• pp.110-114
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• 2014

We propose a low temperature sol-gel ZnO/Ag nanowire composite thin film to fulfill low temperature and low cost requirements, which are essential criteria in future flexible electronic devices. In this proposed thin film, Ag nanowire plays the role of electrical conduction, and sol-gel ZnO provides a structural medium with a high visible transmittance. Low temperature restriction in the sol-gel fabrication process prevents sufficient oxidation of Zn acetate precursors, which were solved by a post-coating treatment with ultraviolet light irradiation. Composite thin film formation was performed by spin coating methods with a mixed precursor solution or in a sequential manner. We obtained an average visible transmittance larger than 85% and a sheet resistance smaller than $50{\Omega}/sq$. After optimization in a fabricated composite transparent conductive thin film with the thickness around 100 nm. Similar experimental demonstration in a flexible substrate (polyethyleneterephthalate) was successful, which implies a promising application opportunity of this technology.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.312.1-312.1
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• 2016

We have deposited ZnO thin films by ultraviolet (UV) enhanced atomic layer deposition using diethylznic (DEZ) and water (H2O) as precursors with UV light. The atomic layer deposition relies on alternating dose of the precursor on the surface and subsequent chemisorption of the precursors with self-limiting growth mechanism. Though ALD is useful to deposition conformal and precise thin film, the surface reactions of the atomic layer deposition are not completed at low temperature in many cases. In this experiment, we focused on the effects of UV radiation during the ALD process on the properties of the inorganic thin films. The surface reactions were found to be complementary enough to yield uniform inorganic thin films and fully react between DEZ and H2O at the low temperature by using UV irradiation. The UV light was effective to obtain conductive ZnO film. And the stability of TFT with UV-enhanced ZnO was improved than ZnO by thermal ALD method. High conductive UV-enhanced ZnO film have the potential to applicability of the transparent electrode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.293.1-293.1
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• 2016

Various materials including conductive, dielectric, and semi-conductive materials, constitute suitable candidates for printed electronics. Metal nanoparticles (e.g. Ag, Cu, Ni, Au) are typically used in conductive ink. However, easily oxidized metals, such as Cu, must be processed at low temperatures and as such, photonic sintering has gained significant attention as a new low-temperature processing method. This method is based on the principle of selective heating of a strongly absorbent film, without light-source-induced damage to the transparent substrate. However, Cu nanoparticles used in inks are susceptible to the growth of a native copper-oxide layer on their surface. Copper-oxide-nanoparticle ink subjected to a reduction mechanism has therefore been introduced in an attempt to achieve long-term stability and reliability. In this work, a flash-light sintering process was used for the reduction of an inkjet-printed Cu(II)O thin film to a Cu film. Using a photographic lighting instrument, the intensity of the light (or intense pulse light) was controlled by the charged power (Ws). The resulting changes in the structure, as well as the optical and electrical properties of the light-irradiated Cu(II)O films, were investigated. A Cu thin film was obtained from Cu(II)O via photo-thermal reduction at 2500 Ws. More importantly, at one shot of 3000 Ws, a low sheet resistance value ($0.2527{\Omega}/sq.$) and a high resistivity (${\sim}5.05-6.32{\times}10^{-8}{\Omega}m$), which was ~3.0-3.8 times that of bulk Cu was achieved for the ~200-250-nm-thick film.

• 전기학회논문지P
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• 제65권4호
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• pp.250-254
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• 2016

In this paper, solar-cell modules were fabricated by low-temperature bonding method of construction using CF. CF adhesive strength of cells at 180 degree using 3bus bar structure was measured average 2.4N. As the bonding temperature got higher, Voc and Iscwas increased. And at $185^{\circ}C$, Rseries was measured 0.013[${\Omega}$] which is the highest point. At $185^{\circ}C$, 2N and 6sec in bonding time, $P_{max}$ was measured 3.954[W], fillfactor was measured 67.36[%] and efficiency was measured13.178[%] the highest point.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.619-620
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• 2011

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.373-373
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• 2012

We fabricated conductive zinc oxide (ZnO) thin film at low temperature by UV-enhanced atomic layer deposition. The atomic layer deposition relies on alternate pulsing of the precursor gases onto the substrate surface and subsequent chemisorption of the precursors. In this experiment, diethylzinc (DEZ) and $H_2O$ were used as precursors with UV light. The UV light was very effective to improve the conductivity of the ZnO thin film. The thickness, transparency and resistivity were investigated by ellisometry, UV-visible spectroscopy and Four-point probe.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.591-592
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• 2006

We studied about the manufacture of the drain-source contacts for OTFTs(organic thin-film transistors) by using screen printing method. The conductive fillers used Ag and carbon black. The conductive contacts with $100{\mu}m$ of channel length were screen printed on a silicon dioxide gate dielectric layer and, the pentacene semiconductor was deposited via vacuum deposition. As a result of studying various conductive pastes, we could obtain the OTFTs which exhibited field-effect behavior over arrange of drain-source and gate voltages, similar to devices employing deposited Au contacts. By using screen-printing with conductive paste, the contacts are processed at low temperature, thereby facilitating their integration with heat sensitive substrates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.510-514
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.