• Journal of Power System Engineering
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• v.15 no.3
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• pp.46-51
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• 2011

Low temperature vacuum drying technique, whose drying time and quantity of exhausting energy is about 25~30% of hot air drying, is very excellent in the drying efficiency. This paper is made out in the aspects of heat engineering with the object of developing Korean drying machine which can dry once a large quantity of objects to be dried in the state of low temperature and vacuum. As the results, it took about 17 hours(3~4 days in case of hot air drying) for material to reach about 18% of the final moisture content in order to store products for a long time, from about 78~80% of the early moisture content at the beginning of drying, and maximum drying rate comes to about 0.35 kg/m2hr at about 400% of the moisture content.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.602-605
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• 2007

Soybean and rape seed are common feedstocks for biodiesel product ion in USA and Europe, respectively. On the other hand, South Eastern countries like Malaysia and Indonesia have surplus palm crops. However due to substantial amount of saturated fats in palm, the palm biodiesel has poor low temperature properties. To improve the low temperature flow properties as biodiesel, the dependence of the cold filter plugging point (CFPP) on the fatty acid compositions was examined. Two different kinds of biodiesels, palm and soybean biodiesels, were blended with the different volume ratios. And the low temperature flow properties of 0.5%, 1%, and 5% biodiesel in diesel blend fuels was tested. The decrease of CFPP was not observed for BD1 with Palm BD. Also, WDI test didn't exceed in the range of 4oC by the mixing of Palm BD upto 5% in commercial diesels.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.664-666
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• 2008

Low-temperature curable organic insulator was prepared through blending of polyimide type base resin and cross-linking agent. The newly developed resin can be formed into films using a wet process and cured at $130^{\circ}C$. Using the low temperature cured film as the gate dielectric layer, the field effect mobility of $0.15\;cm^2/V{\cdot}s$ was obtained from a pentacene field effect transistor in the saturation regime and no hysteresis behavior was observed in transfer curves.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.940-943
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• 2005

The characteristics of a-Si:H TFTs with silicon oxide as passivation layer were reported. It was studied that the insulating characteristics and step coverage characteristics of low temperature silicon oxide before applying to a-Si:H TFT fabrications. With the optimum deposition conditions considering electrical and deposition characteristics, low temperature silicon oxide was applied to a-Si:H TFTs. The changes in characteristics of a-Si:H TFTs were analyzed after replacing silicon nitride passivation layer with low temperature silicon oxide layer. This low temperature silicon oxide can be adapted to high resolution a-Si:H TFT LCD panels.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.387-389
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• 2006

The LCD TV has many variable functions for consumer. Low temperature driving below minus 20 degree is also one of key functions. Since LCD is not self-luminance device, it is needed backlight system. Recently EEFL(External Electrode Fluorescent Lamp) widely substitutes for CCFL(Cold Cathode Fluorescent Lamp). It is more cheaper, higher efficiency, and easy to drive parallel connection compared to CCFL. In this paper, several conditions for low temperature driving of EEFL are investigated and a new boost-half bridge inverter for low temperature driving is proposed. Mode analysis is described and experimental results is represented to verify validity of the proposed inverter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.90-93
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• 1996

The conduction mechanisms of the off-current in low temperature ($\leq$600$^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT's) has been systematically studied. Especially, the temperature and bias dependence of the off-current between unpassivated and passivated poly-Si TFT's was investigated and compared. The off-current of unpassivated poly-Si TFT's is due to a resistive current at low gate and drain voltage, thermal emission current at high gate, low drain voltage, and field enhanced thermal emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation, it was observed that the off-currents were remarkably reduced by plasma-hydrogenation. It was also observed that the off-currents of the passivated poly-Si TFT's are more critically dependent on temperature rather than electric field.

• Journal of Power System Engineering
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• v.5 no.1
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• pp.44-49
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• 2001

Low temperature vacuum drying technique shows very excellent energy efficiency and prominent drying performances compared with the conventional hot air drying technique. This study was focused on the thermal characteristics of the low temperature vacuum drying technique. From the results of this study, it was confirmed that the time consumption for drying with the new drying technique could be shortened to about 1/3 of the time consumption with the conventional hot air drying technique under the same drying conditions for wet products. Also, the maximum drying rate with the new drying technique reached to about $0.35kg/m^2h$ at about 400% of moisture content.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.11
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• pp.1227-1234
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• 1990

This study is to figure out the properties of the DC thermal plasma at low pressure. For this purpose, a temperature measurement system utilizing emission spectroscopy has been set up and its measurement method and results have been described. At low pressure, the plasma has shown drastic changes in its appearance. The discharge characteristics under low pressure have been measured and analyzed. The temperature of thermal plasma generated in this research has been ranged from 10, 000 K to 15, 000 K. Temperature has been observed to increase with the flow rate and magnetic field strength. The temperature characteristics at low pressure has been observed to coincide with the reported results.

• Journal of ILASS-Korea
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• v.22 no.4
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• pp.190-196
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• 2017

The aim of this work is to investigate the combustion and exhaust emission characteristics of low-temperature combustion (LTC) at various EGR test conditions using a single cylinder common-rail diesel engine. In high EGR rate combustion mode with DME fuel, 30% (${\Phi}=0.61$) and 50% (${\Phi}=0.86$) of EGR were respectively examined, and then the combustion, exhaust emissions, nano-particle characteristics of each cases were measured. From these results, it revealed that The ignition delay and combustion duration are prolonged as the increase of EGR rate. In addition, at an advanced injection timing (BTDC $30^{\circ}$), ignition delays were fairly increased because the dilution effect of EGR and also low charge in-cylinder temperature created a lean mixture, thus decreased the peak release rate.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.15-18
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• 2007

Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.