• 한국전기전자재료학회논문지
• /
• 제22권11호
• /
• pp.987-991
• /
• 2009

We report growth of vertically well-aligned zinc oxide (ZnO) nanorods on indium-tin oxide (ITO)/glass substrates using a simple aqueous solution method at low temperature via control of the ZnO seed layer morphology. ZnO nanoparticles acting as seeds are pre-coated on ITO-coated glass substrates. by spin coating to control distribution and density of the ZnO seed nanoparticles. ZnO nanorods were synthesized on the seed-coated substrates in a dipping process into a main growth solution. It was found that the alignment of ZnO nanorods can be effectively manipulated by the spin-coating speed of the seed layer. A grazing incidence X-ray diffraction pattern shows that the ZnO seed layer prepared using the higher spin-coating speed is of uniform seed distribution and a flat surface, resulting in the vertical growth of ZnO nanorods aligned toward the [0001] direction in the main growth process.

• 한국자기학회지
• /
• 제1권2호
• /
• pp.55-59
• /
• 1991

희토류-3d 천이원소인 비정질${[{(Fe_{80}CO_{20})}_{0.98}RE_{0.02}]}_{80}B_{20}(RE=Nd,\;Sm,\;Gd,\;Tb)$ 합금 리본시료에 대한 자기적 성질을 조사하기 위하여 시료진동형 자력계(vibrating sample magnetometor)를 이용하여 77 K부터 900 K까지의 온도 영역에서 포화자화 값을 온도의 함수로 측정 한후, Curie 온도 ($T_{c}$)와 Bloch 상수등을 추정하였다. 이들로 부터 spin wave stiffness 상수, 교환상호작용(exchange interaction)의 범위와 평균자승거리($$)등을 계산하였으며 각 희토류 원소에 대한 치환효과를 비교 분석하였다.

• 한국ITS학회 논문지
• /
• 제12권4호
• /
• pp.66-75
• /
• 2013

나노미터 크기의 Spintronics 발진기 어레이를 기반으로 Spintronics 발진기의 주파수 및 진폭을 동시에 변조하는 새로운 스핀변조를 실현할 수 있다. 본 논문에서는 실현된 스핀 변조신호를 무선으로 수신하기 위해 듀얼 채널를 처리하는 수신기를 설계하였다. 최종적으로 얻어진 Spintronics 발진기 어레이에서 만들어진 스핀변조 신호를 수신기의 두 채널을 통해서 동시에 처리 할 수 있었으며, 각 채널당 최종적으로 200 kbps급 까지의 데이타 전송을 실현하였다. Spintronics 발진기의 신호 레벨 -60 dBm 크기의 한계로 1 cm 이하의 근접거리 통신에서 가능하며, 듀얼 채널 수신기는 $56{\times}33mm^2$ 크기이다.

• 한국재료학회지
• /
• 제25권4호
• /
• pp.171-176
• /
• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

• Journal of Ginseng Research
• /
• 제22권2호
• /
• pp.96-101
• /
• 1998

This paper describes the determination of bulk density and the discrimination of internal structure of red ginseng by nuclear magnetic resonance (NMR). The 102 red ginseng roots were tested for bulk density. The NMR properties measured by NMR parameters such as spin-lattice relaxation time ($T_1$) and spin-spin relaxation time ($T_2$) were determined using the low field proton NMR analyzer. Bulk density of red ginseng root showed a highly negative significant correlation (r=-0.8934) with the value of $T_1$, but a highly positive significant correlation (r=0.7672 and 0.5909) with the value of T21 (short T2) and T22 (long T2), respectively. Multiple regression equation, Y=-0.0069.$T_1$+0.3044.$T_{21}$-0.0156.$T_{22}$-0.6368, using the MNR parameter values of 80 red ginseng roots can effectively predict the bulk density of 22 red ginseng roots with the correlation coefficient of 0.9396 and the standard error of 0.086. The differences in the internal structure of normal and inside white part of red ginseng were easily found by the signal intensity of NMR image based on magnetic properties of proton nucleus.

• 한국자기학회지
• /
• 제22권3호
• /
• pp.73-78
• /
• 2012

본 연구에서는 Argyres-Sigel의 투영 연산자 방법을 단일 벽 탄소 나노튜브(SWNT)의 zigzag(10,0)에 직접 적용하여 이를 운동방정식의 형태로 만들어 선모양 함수를 구하는 방법을 사용하였다. 선모양 함수의 실수 부분인 선 너비는 저온 영역(T < 200K)에서 온도의 영향에 거의 무관한 것으로 조사되었다. 이는 온도에 관여하는 페르미-디랙 분포함수가 선모양 함수에 거의 영향을 작용하지 않기 때문인 것으로 생각된다. 고온 영역(T > 200K)에서는 선 너비가 다소 단조롭게 증가하는 것으로 나타났으며, 이는 음향 포논의 영향에 기인하는 것으로 보인다. 그리고 SWNT의 전자스핀이완 시간은 $1.4{\times}10^{-6}\;s$으로 계산되었다.

• BMB Reports
• /
• 제46권3호
• /
• pp.151-156
• /
• 2013

Phylogenetic and amino acid sequence analysis indicated that rice allene oxide synthase-1 (OsAOS1) is CYP74, and is clearly distinct from CYP74B, C and D subfamilies. Regio- and stereo-chemical analysis revealed the dual substrate specificity of OsAOS1 for (cis,trans)-configurational isomers of 13(S)- and 9(S)-hydroperoxyoctadecadienoic acid. GC-MS analysis showed that OsAOS1 converts 13(S)- and 9(S)-hydroperoxyoctadecadi(tri)enoic acid into their corresponding allene oxide. UV-Visible spectral analysis of native OsAOS1 revealed a Soret maximum at 393 nm, which shifted to 424 nm with several clean isobestic points upon binding of OsAOS1 to imidazole. The spectral shift induced by imidazole correlated with inhibition of OsAOS1 activity, implying that imidazole may coordinate to ferric heme iron, triggering a heme-iron transition from high spin state to low spin state. The implications and significance of a putative type II ligand-induced spin state transition in OsAOS1 are discussed.

• 한국세라믹학회지
• /
• 제40권11호
• /
• pp.1102-1105
• /
• 2003

광섬유 인선공정에 의해 생성된 실리카 유리내 점결함을 조사하였다. 본 연구에서는 특히 OH기가 적은 실리카 광섬유내 광섬유 인선 공정이 유발하는 oxygen deficient center와 E' center를 중점적으로 조사하였다. 광섬유 인선공정에 의해 oxygen deficient center 와 E’ center가 생성되었다는 것을 광학적 흡수대와 electron spin resonance를 이용하여 밝힐 수 있었다. 실리카 광섬유모재에서 가느다란 광섬유로 변환하는 neck-down 부분에서 점결함의 변화를 조사하였다. 점결함은 neck-down 부분에서 생성되며, 중심부분 보다 가장자리 부분에서 더 많은 점결함이 생성되었음을 알 수 있었다.

• 전기학회논문지
• /
• 제58권11호
• /
• pp.2214-2218
• /
• 2009

Dye-sensitized solar cell (DSC) has been considered as a possible alternative to current silicon based p-n junction photovoltaic devices due to its advantages of high efficiency, simple fabrication process and low production cost. Numerous researches for high efficient DSC in the various fields are under way even now. Among them, the compact layer, which prevents the back electron transfer between transparent conductive oxides and the redox electrolyte, is fabricated by various methods such as a ZnO dip-coating, $TiCl_4$ dip-coating, and Ti sputtering. In this study, we tried to fabricate the $TiO_2$ compact layer by the spin-coating method using aqueous $TiCl_4$ solution. The effect of the spin-coating method was checked as compared with conventional dip-coating method. As a result, DSC with a spin-coated compact layer had 33.4% and 6% better efficiency than standard DSC and DSC with a dip-coated compact layer.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
• /
• pp.24-24
• /
• 2003

Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.