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http://dx.doi.org/10.4283/JKMS.2012.22.3.073

Investigation of Temperature Dependence for CNT Semiconductor in External Magnetic Field  

Park, Jung-Il (Nano-Physics and Technology Laboratory, Department of Physics, Kyungpook National University)
Lee, Haeng-Ki (Department of Radiotechnology, Suseong College)
Abstract
We calculated the electron spin resonance (ESR) line-profile function. The line-width of single-walled carbon nanotube (SWNT) was studied as a function of the temperature at a frequency of 9.5 GHz in the presence of external electromagnetic radiation. The temperature dependence of the line-widths is obtained with the projection operator method (POM) proposed by Argyres and Sigel. The scattering is little affected in the low-temperature region (T < 200 K). We conclude that the calculation process presented in this method is useful for optical transitions in SWNT.
Keywords
electron spin resonance (ESR); projection operator method (POM); carbon nanotube; zigzag; line-width; electron spin relaxation;
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