• 제목/요약/키워드: Low-k materials

검색결과 8,594건 처리시간 0.043초

A Study on Feasibility of Hexagonal Phase ZnS:$Mn^{2+}$ Phosphor for Low-voltage Display Applications

  • Shin, Sang-Hoon;Lee, Sang-Hyuk;You, Yong-Chan;Jung, Joa-Young;Park, Chang-Won;Chang, Dong-Sik
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
    • /
    • pp.815-818
    • /
    • 2002
  • Mn doped hexagonal phase of ZnS has been studied as a yellow-orange phosphor for the application to fluorescent displays operated at low voltages. It was found that luminescence from $Mn^{2+}$ was increased as the Mn concentration was increased up to1.2 mol% of host lattice. This study has been attempted by adding trivalent ions such as $Al^{3+}$ or $Bi^{3+}$ to ZnS:Mn as an agent to do the efficient incorporation of Mn ions into ZnS:Mn lattice, resulting in a significant improvement in the phosphor performance, especially at low voltages.

  • PDF

Low Hysteresis Organic Thin Film Transistors with Modified Photocrosslinkable Poly (4-vinylphenol)

  • Kim, Doo-Hyun;Kim, Hyoung-Jin;Kim, Byung-Uk;Kim, We-Yong;Kim, Ho-Jin;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
    • /
    • pp.563-565
    • /
    • 2009
  • We introduce the new modification approaches of photocrosslinkable poly (4-vinylphenol) (PVP) for low hysteresis organic thin film transistors (OTFTs). The dielectric layers were composed of different PVP resin, low molecular melamine, and halogen free photo-initiator. The low hysteresis OTFT from one of the organic gate dielectrics has been realized. The electrical performance of low hysteresis OTFT with photocrosslinkable PVP exhibited a field-effect mobility of 0.2 cm2/Vs, a threshold voltage of - 0.04V, hysteresis of 0.4V.

  • PDF

Low temperature growth of GaN on sapphire using remote plasma enhanced-ultrahigh vacuum chemical vapor deposition

  • Park, J.S.;Kim, M.H.;Lee, S.N.;Kim, K.K.;Yi, M.S.;Noh, D.Y.;Kim, H.G.;Park, S.J.
    • 한국진공학회지
    • /
    • 제7권s1호
    • /
    • pp.85-99
    • /
    • 1998
  • A ultrahigh vacuum chemical vapor deposition(UHVCVD)/metalorganic chemical vapor deposition(MOMBE) system equipped with a radio frequency(RF)-plasma cell was employed to grow GaN layer on the sapphire at a low temperature. The x-ray photoelectron spectroscopy analysis of nitrogen composition on the nitridated sapphite surface indicated that a nitridation process is mostly affected by the RF power at low temperature. Atomic force microscope images of nitridated surface the protrusion density on the nitridated sapphire is dependent on the nitridation temperature. The crystallinity of GaN grown at $450^{\circ}C$ was found to be much improved when the sapphire was nitridated at low temperature prior to the GaN layer growth. Moreover, a strong photoluminescence spectrum of GaN grown by UHVCVD/MOMBE with a rf-nitrogen plasma was observed for the first time at room temperature.

  • PDF

Preceramic Polymer를 이용한 저유전박막 제조 및 특성 분석 (Preparation and Characterization of Low k Thin Film using a Preceramic Polymer)

  • 김정주;이정현;이윤주;권우택;김수룡;최두진;김형순;김영희
    • 한국세라믹학회지
    • /
    • 제48권6호
    • /
    • pp.499-503
    • /
    • 2011
  • Recently, variety of organic and inorganic hybrid materials have recently investigated as alternative routes to SiOC, $SiO_2$ thin film formation at low temperatures for applications in electronic ceramics. Specially, silicon based polymers, such as polycarbosilane, polysilane and polysilazane derivatives have been studied for use in electronic ceramics and have been applied as dielectric or insulating materials. In this study, Polycarbosilane(PCS), which Si-$CH_2$-Si bonds build up the backbone of the polymer, has been investigated as low-k materials using a solution process. After heat treatment at 350$^{\circ}C$ under $N_2$ atmosphere, chemical composition and dielectric constant of the thin film were $SiO_{0.27}C_{1.94}$ and 1.2, respectively. Mechanical property measured using nanoindentor shows 1.37 GPa.

고유전율/저유전율 LTCC 동시소성 기판의 휨 현상 (Warpage of Co-fired High K/Low K LTCC Substrate)

  • 조현민;김형준;이충석;방규석;강남기
    • 마이크로전자및패키징학회지
    • /
    • 제11권3호
    • /
    • pp.77-82
    • /
    • 2004
  • 본 연구에서는 고유전율(K100) 및 저유전율(K7.8) LTCC(Low Temperature Co-fired Ceramics) 그린 시트를 이종 LTCC 기판으로 동시 소성하는 경우, 고유전율 LTCC 내의 유리 분말 함유량에 따라 발생하는 수축 거동 변화가 이종 LTCC기판의 휨 특성에 미치는 영향에 대하여 평가하였다. 유리 분말 함유량의 증가에 따른 고유전율 LTCC 그린시트의 수축률 및 유전 특성을 측정하였으며, 고유전율/저유전율 비대칭형 적층체의 소결 거동을 고온 현미경을 이용하여 실시간으로 측정하였다. $50\%$ 유리가 첨가된 K100 조성의 경우 수축 개시 온도 및 수축 구간의 범위 , 최종 수축률이 K7.8 조성과 유사하였으며, 동시 소성 시 가장 우수한 휨 특성을 나타내었다.

  • PDF

저 유전 재료의 에칭 공정을 위한 $H_2/N_2$ 가스를 이용한 Capacitively Coupled Plasma 시뮬레이션 (Capacitively Coupled Plasma Simulation for Low-k Materials Etching Process Using $H_2/N_2$ gas)

  • 손채화
    • 대한전기학회논문지:전기물성ㆍ응용부문C
    • /
    • 제55권12호
    • /
    • pp.601-605
    • /
    • 2006
  • The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multi-layer interconnections in smaller scales with higher integration density. Low-k materials are applied to the inter-metal dielectric (IMD) materials in order to overcome the RC delay. Relaxation continuum (RCT) model that includes neutral-species transport model have developed to model the etching process in a capacitively coupled plasma (CCP) device. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. For the etching of low-k materials by $N_2/H_2$ plasma, N and H atoms have a big influence on the materials. Moreover the distributions of excited neutral species influence the plasma density and profile. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatio-temporal steady state profile could be obtained.

동위원소희석 유도결합플라스마질량분석법에 의한 저 합금강 표준시료중의 Ni, Cr, Mo의 분석 (Determination of Ni, Cr, Mo in Low Alloy Steel Reference Materials by Isotope Dilution Inductively Coupled Plasma Mass Spectrometry)

  • 서정기;우진춘;민형식;임명철
    • 분석과학
    • /
    • 제16권1호
    • /
    • pp.82-89
    • /
    • 2003
  • Isotope dilution mass spectrometry (IDMS) was applied to the determination of Ni, Cr, Mo in low alloy steel reference materials. The Mo isotope ratio measurement was performed by dynamic reaction cell inductively coupled plasma mass spectrometry (DRC-ICP/MS) using ammonia as a reaction cell gas. In the case of Ni and Cr measurement, all data were obtained at medium resolution mode (m/${\Delta}m=3000$) of double focusing sector field high resolution inductively coupled plasma mass spectrometry (HR-ICP/MS). For the method validation of the technique was assessed using the certified reference materials such as NIST SRM 361, NIST SRM 362, NIST SRM 363, NIST SRM 364, NIST SRM 36b. This method was applied to the determination of Ni, Cr and Mo in low alloy steel sample (CCQM-P25) provided by NMIJ for international comparison study.

제어 압연과 가속 냉각에 의해 저탄소강에서 형성되는 미세조직의 특징과 구분 (Microstructure Characteristics and Identification of Low-Carbon Steels Fabricated by Controlled Rolling and Accelerated Cooling Processes)

  • 이상인;홍태운;황병철
    • 한국재료학회지
    • /
    • 제27권11호
    • /
    • pp.636-642
    • /
    • 2017
  • In the present study the microstructure of low-carbon steels fabricated by controlled rolling and accelerated cooling processes was characterized and identified based on various microstructure analysis methods including optical and scanning electron microscopy, and electron backscatter diffraction(EBSD). Although low-carbon steels are usually composed of ${\alpha}-ferrite$ and cementite($Fe_3C$) phases, they can have complex microstructures consisting of ferrites with different size, morphology, and dislocation density, and secondary phases dependent on rolling and accelerated cooling conditions. The microstructure of low-carbon steels investigated in this study was basically classified into polygonal ferrite, acicular ferrite, granular bainite, and bainitic ferrite based on the inverse pole figure, image quality, grain boundary, kernel average misorientation(KAM), and grain orientation spread(GOS) maps, obtained from EBSD analysis. From these results, it can be said that the EBSD analysis provides a valuable tool to identify and quantify the complex microstructure of low-carbon steels fabricated by controlled rolling and accelerated cooling processes.

탄소계 소재를 이용한 극저주파 영역에서의 자기 차폐효과 연구 (Study on the Magnetic Shield Effect of Carbon-based Materials at Extremely Low Frequency)

  • 오성문;강동수;이상민;백운경;노재승
    • KEPCO Journal on Electric Power and Energy
    • /
    • 제1권1호
    • /
    • pp.15-20
    • /
    • 2015
  • To examine the magnetic shielding effect for carbon-based materials at extremely low frequencies (60 Hz), two types of carbon black (Super-P and Denka Black) and a natural graphite (HC-198) were mixed into organic binder at 10 wt.% to produce a coating solution, and a powder coating with varying thickness was applied on an aluminum disk measuring 88 mm in radius. A device was developed to measure the sheielding effect at extremely low frequencies. A closed circuit was achieved by connecting a transformer and a resistor. The applied voltage was fixed at 65 V, and the magnetic field was measured to being the range of 4.95~5.10 mG. Depending on the thickness of the coating layer, the magnetic field showed a decreasing trend. The maximum decrease in the magnetic field of 38.3% was measured when natural graphite was coated with specimens averaging $455{\mu}m$. This study confirmed that carbon-based materials enable magnetic shielding at extremely low frequencies, and that the magnetic shielding effect can be enhanced by varying the coating thickness.